JP5180381B2 - 基板からテンプレートを分離する際の応力の低減 - Google Patents
基板からテンプレートを分離する際の応力の低減 Download PDFInfo
- Publication number
- JP5180381B2 JP5180381B2 JP2011532095A JP2011532095A JP5180381B2 JP 5180381 B2 JP5180381 B2 JP 5180381B2 JP 2011532095 A JP2011532095 A JP 2011532095A JP 2011532095 A JP2011532095 A JP 2011532095A JP 5180381 B2 JP5180381 B2 JP 5180381B2
- Authority
- JP
- Japan
- Prior art keywords
- template
- feature
- region
- dense
- features
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title description 34
- 238000000926 separation method Methods 0.000 claims description 89
- 238000001459 lithography Methods 0.000 claims description 11
- 238000007373 indentation Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Mechanical Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10723808P | 2008-10-21 | 2008-10-21 | |
| US61/107,238 | 2008-10-21 | ||
| US12/581,236 US8075299B2 (en) | 2008-10-21 | 2009-10-19 | Reduction of stress during template separation |
| US12/581,236 | 2009-10-19 | ||
| PCT/US2009/005692 WO2010047769A1 (en) | 2008-10-21 | 2009-10-20 | Reduction of stress during template separation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012506618A JP2012506618A (ja) | 2012-03-15 |
| JP2012506618A5 JP2012506618A5 (enExample) | 2012-04-26 |
| JP5180381B2 true JP5180381B2 (ja) | 2013-04-10 |
Family
ID=42108007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011532095A Active JP5180381B2 (ja) | 2008-10-21 | 2009-10-20 | 基板からテンプレートを分離する際の応力の低減 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8075299B2 (enExample) |
| JP (1) | JP5180381B2 (enExample) |
| KR (2) | KR101886066B1 (enExample) |
| TW (1) | TWI402159B (enExample) |
| WO (1) | WO2010047769A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050156353A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Method to improve the flow rate of imprinting material |
| US8075299B2 (en) | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
| US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| JP4792096B2 (ja) * | 2009-03-19 | 2011-10-12 | 株式会社東芝 | テンプレートパターンの設計方法、テンプレートの製造方法及び半導体装置の製造方法。 |
| JP5499668B2 (ja) * | 2009-12-03 | 2014-05-21 | 大日本印刷株式会社 | インプリント用モールドおよび該モールドを用いたパターン形成方法 |
| JP5238742B2 (ja) * | 2010-03-19 | 2013-07-17 | 株式会社東芝 | 加工方法および加工装置 |
| WO2011139782A1 (en) | 2010-04-27 | 2011-11-10 | Molecular Imprints, Inc. | Separation control substrate/template for nanoimprint lithography |
| TW201313428A (zh) * | 2011-06-30 | 2013-04-01 | Asahi Chemical Ind | 微細凹凸構造轉印用鑄模 |
| KR101910974B1 (ko) * | 2011-12-13 | 2018-10-24 | 삼성전자주식회사 | 임프린팅 스탬프 및 이를 이용한 나노 임프린트 방법 |
| JP6083135B2 (ja) * | 2012-06-08 | 2017-02-22 | 大日本印刷株式会社 | ナノインプリント用テンプレート及びそれを用いたパターン形成方法 |
| JP5993230B2 (ja) * | 2012-07-03 | 2016-09-14 | 株式会社日立ハイテクノロジーズ | 微細構造転写装置及び微細構造転写スタンパ |
| KR20140030382A (ko) | 2012-08-27 | 2014-03-12 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
| JP6155720B2 (ja) * | 2013-03-15 | 2017-07-05 | 大日本印刷株式会社 | ナノインプリント用テンプレートのパターン配置方法、及びナノインプリント用テンプレート |
| JP6060796B2 (ja) * | 2013-04-22 | 2017-01-18 | 大日本印刷株式会社 | インプリントモールド及びダミーパターン設計方法 |
| US11554563B2 (en) | 2017-08-22 | 2023-01-17 | Heptagon Micro Optics Pte. Ltd. | Replication and related methods and devices, in particular for minimizing asymmetric form errors |
| CN107993956B (zh) * | 2017-11-29 | 2020-07-07 | 中国电子科技集团公司第十三研究所 | 线距标准样片的制备方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| DE20122179U1 (de) | 2000-07-17 | 2004-09-16 | Board of Regents, The University of Texas System, Austin | Vorrichtung zum automatischen Abgeben von Flüssigkeit für Prägelithographieprozesse |
| CN1262883C (zh) * | 2000-07-17 | 2006-07-05 | 得克萨斯州大学系统董事会 | 影印用于平版印刷工艺中的自动化液体分配的方法和系统 |
| AU2001297642A1 (en) * | 2000-10-12 | 2002-09-04 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro- and nano-imprint lithography |
| JP2003017390A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | パターン形成方法及びパターン形成に用いるマスク |
| US20050064344A1 (en) * | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
| JP3556647B2 (ja) * | 2001-08-21 | 2004-08-18 | 沖電気工業株式会社 | 半導体素子の製造方法 |
| US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| US6936194B2 (en) * | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
| US20040065252A1 (en) * | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
| US8349241B2 (en) * | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
| US20040168613A1 (en) * | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
| US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| EP1606834B1 (en) * | 2003-03-27 | 2013-06-05 | Korea Institute Of Machinery & Materials | Uv nanoimprint lithography process using elementwise embossed stamp |
| KR100495836B1 (ko) * | 2003-03-27 | 2005-06-16 | 한국기계연구원 | 다중 양각 요소 스탬프를 이용한 나노임프린트 리소그래피공정 |
| US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7157036B2 (en) * | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| US8076386B2 (en) * | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| US7309225B2 (en) * | 2004-08-13 | 2007-12-18 | Molecular Imprints, Inc. | Moat system for an imprint lithography template |
| US20060145398A1 (en) * | 2004-12-30 | 2006-07-06 | Board Of Regents, The University Of Texas System | Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks |
| JP2006245072A (ja) * | 2005-02-28 | 2006-09-14 | Canon Inc | パターン転写用モールドおよび転写装置 |
| US7762186B2 (en) * | 2005-04-19 | 2010-07-27 | Asml Netherlands B.V. | Imprint lithography |
| US7803308B2 (en) * | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
| EP1957249B1 (en) * | 2005-12-08 | 2014-11-12 | Canon Nanotechnologies, Inc. | Method and system for double-sided patterning of substrates |
| US7670530B2 (en) * | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
| JP2008091782A (ja) * | 2006-10-04 | 2008-04-17 | Toshiba Corp | パターン形成用テンプレート、パターン形成方法、及びナノインプリント装置 |
| JP5062521B2 (ja) * | 2007-02-27 | 2012-10-31 | 独立行政法人理化学研究所 | レプリカモールドの製造方法およびレプリカモールド |
| US8075299B2 (en) | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
-
2009
- 2009-10-19 US US12/581,236 patent/US8075299B2/en active Active
- 2009-10-20 KR KR1020177026771A patent/KR101886066B1/ko active Active
- 2009-10-20 JP JP2011532095A patent/JP5180381B2/ja active Active
- 2009-10-20 WO PCT/US2009/005692 patent/WO2010047769A1/en not_active Ceased
- 2009-10-20 KR KR1020117010168A patent/KR101782904B1/ko active Active
- 2009-10-20 TW TW098135412A patent/TWI402159B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010047769A1 (en) | 2010-04-29 |
| TW201024074A (en) | 2010-07-01 |
| US20100096776A1 (en) | 2010-04-22 |
| KR20110074572A (ko) | 2011-06-30 |
| KR20170113688A (ko) | 2017-10-12 |
| TWI402159B (zh) | 2013-07-21 |
| KR101886066B1 (ko) | 2018-08-07 |
| KR101782904B1 (ko) | 2017-09-28 |
| WO2010047769A8 (en) | 2010-12-09 |
| US8075299B2 (en) | 2011-12-13 |
| JP2012506618A (ja) | 2012-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5180381B2 (ja) | 基板からテンプレートを分離する際の応力の低減 | |
| JP5404654B2 (ja) | テンプレート形成時の限界寸法制御 | |
| US8913230B2 (en) | Chucking system with recessed support feature | |
| KR101299475B1 (ko) | 기판 상에 복수의 필드의 패터닝 방법 | |
| US7547398B2 (en) | Self-aligned process for fabricating imprint templates containing variously etched features | |
| KR102241025B1 (ko) | 임프린트 리소그래피 주형 및 제로-갭 임프린팅 방법 | |
| KR102305247B1 (ko) | 국부 필드 임프린팅을 위한 비대칭 템플릿 형상 변조 | |
| JP5728478B2 (ja) | 隣接するフィールドのアラインメント方法 | |
| KR20120125473A (ko) | 고 콘트라스트 정렬 마크를 갖는 주형 | |
| KR102243630B1 (ko) | 20nm 이하 특징부의 균일한 임프린트 패턴 전사 방법 | |
| JP2009536591A (ja) | 厚さが変化するテンプレート | |
| US11209730B2 (en) | Methods of generating drop patterns, systems for shaping films with the drop pattern, and methods of manufacturing an article with the drop pattern | |
| TWI538011B (zh) | 經由多階壓印處理之高對比對準標記 | |
| WO2010147671A1 (en) | Dual zone template chuck | |
| US7874831B2 (en) | Template having a silicon nitride, silicon carbide or silicon oxynitride film | |
| JP2020127008A (ja) | 質量速度変動フィーチャを有するテンプレート、テンプレートを使用するナノインプリントリソグラフィ装置、およびテンプレートを使用する方法 | |
| US12085852B2 (en) | Template, method of forming a template, apparatus and method of manufacturing an article | |
| US11294277B2 (en) | Process of imprinting a substrate with fluid control features |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120131 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120131 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20120131 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20120214 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120313 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120613 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120620 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120813 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120820 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120911 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121211 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130110 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5180381 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |