JP5174972B2 - 薄膜太陽電池モジュールおよびその製造方法 - Google Patents
薄膜太陽電池モジュールおよびその製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 claims description 45
- 238000005304 joining Methods 0.000 claims description 35
- 230000008569 process Effects 0.000 description 33
- 239000000463 material Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
- Y10T29/49355—Solar energy device making
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
図1は、本発明の実施の形態1に係る薄膜太陽電池モジュールの裏面側平面概略構成を示す図である。図2は、図1に示す薄膜太陽電池モジュールのAA断面概略構成を示す図である。薄膜太陽電池モジュールのうち、太陽光が入射する側の面を表面とし、表面とは反対側の面を裏面とする。
図5は、本発明の実施の形態2に係る薄膜太陽電池モジュールの製造方法のうち、バスバー配線形成工程の各過程における概略断面構成を示す図である。本実施の形態は、あらかじめ互いに連結された複数の導電部材10を薄膜太陽電池デバイス2に接合させることを特徴とする。実施の形態1と同一の部分には同一の符号を付し、重複する説明を省略する。
図7は、本発明の実施の形態3に係る薄膜太陽電池モジュールの製造方法のうち、バスバー配線形成工程の各過程における概略断面構成を示す図である。本実施の形態は、あらかじめ互いに連結された複数の導電部材10を薄膜太陽電池デバイス2に接合させる点は実施の形態2と同様であるが、複数の導電部材10の連結形態が実施の形態2と異なる。実施の形態1と同一の部分には同一の符号を付し、重複する説明を省略する。
3、30 バスバー配線
8 裏面電極
9 接合部材
10 導電部材
Claims (7)
- 複数の薄膜太陽電池セルを直列に接続させて構成された薄膜太陽電池デバイスと、
前記薄膜太陽電池デバイスの正極側端部および負極側端部に設けられたバスバー配線と、を有し、
前記バスバー配線は、複数の導電部材が一部に重なりをもって連結して構成されることを特徴とする薄膜太陽電池モジュール。 - 前記複数の導電部材の連結部分において前記導電部材同士を接合させる接合部材を有し、
前記接合部材は、前記導電部材の端部には配置されないことを特徴とする請求項1に記載の薄膜太陽電池モジュール。 - 複数の薄膜太陽電池セルが直列に接続された薄膜太陽電池デバイスを形成する工程と、
前記薄膜太陽電池デバイスの正極側端部および負極側端部にバスバー配線を形成するバスバー配線形成工程と、を含み、
前記バスバー配線形成工程において、複数の導電部材を一部に重なりを持たせて連結させることにより前記バスバー配線を形成することを特徴とする薄膜太陽電池モジュールの製造方法。 - 前記バスバー配線形成工程において、
前記薄膜太陽電池デバイスに先に接合された導電部材と、前記薄膜太陽電池デバイスとに、次の導電部材を接合することにより、前記薄膜太陽電池デバイス上にて前記導電部材同士を連結させることを特徴とする請求項3に記載の薄膜太陽電池モジュールの製造方法。 - 前記バスバー配線形成工程において、
前記導電部材同士を順次接合させることで複数の前記導電部材を連結させ、
互いに連結された複数の前記導電部材を前記薄膜太陽電池デバイスに接合させることを特徴とする請求項3に記載の薄膜太陽電池モジュールの製造方法。 - 前記バスバー配線形成工程において、
互いに連結された複数の前記導電部材の一部を前記薄膜太陽電池デバイスに接合させることを特徴とする請求項5に記載の薄膜太陽電池モジュールの製造方法。 - 前記バスバー配線形成工程において、
前記導電部材同士を接合部材により接合させ、
前記導電部材および前記薄膜太陽電池デバイスを接合させ、
前記導電部材同士を接合する前記接合部材は、前記導電部材の端部には配置しないことを特徴とする請求項4〜6のいずれか1つに記載の薄膜太陽モジュールの製造方法。
Priority Applications (1)
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JP2011539331A JP5174972B2 (ja) | 2009-11-05 | 2010-10-20 | 薄膜太陽電池モジュールおよびその製造方法 |
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JP2009253874 | 2009-11-05 | ||
JP2009253874 | 2009-11-05 | ||
PCT/JP2010/068516 WO2011055634A1 (ja) | 2009-11-05 | 2010-10-20 | 薄膜太陽電池モジュールおよびその製造方法 |
JP2011539331A JP5174972B2 (ja) | 2009-11-05 | 2010-10-20 | 薄膜太陽電池モジュールおよびその製造方法 |
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JPWO2011055634A1 JPWO2011055634A1 (ja) | 2013-03-28 |
JP5174972B2 true JP5174972B2 (ja) | 2013-04-03 |
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Country Status (4)
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US (1) | US20120204932A1 (ja) |
JP (1) | JP5174972B2 (ja) |
CN (1) | CN102630347B (ja) |
WO (1) | WO2011055634A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103840024B (zh) * | 2012-11-23 | 2018-03-13 | 北京创昱科技有限公司 | 一种互联式柔性太阳能电池及其制作方法 |
CN103236461B (zh) * | 2013-04-03 | 2016-05-25 | 友达光电股份有限公司 | 光电转换模块 |
CN106449777B (zh) * | 2016-11-04 | 2018-06-01 | 广东永明建设发展有限公司 | 一种具有高光电转换效率的太阳能电池模块 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068542A (ja) * | 1998-08-26 | 2000-03-03 | Sharp Corp | 集積型薄膜太陽電池モジュール |
JP2001053318A (ja) * | 1999-08-06 | 2001-02-23 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュール |
JP2002359381A (ja) * | 2001-05-31 | 2002-12-13 | Canon Inc | 光起電力素子及びその製造方法 |
JP2009081317A (ja) * | 2007-09-27 | 2009-04-16 | Kyocera Corp | 太陽電池モジュールおよびその製造方法 |
Family Cites Families (8)
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US4443652A (en) * | 1982-11-09 | 1984-04-17 | Energy Conversion Devices, Inc. | Electrically interconnected large area photovoltaic cells and method of producing said cells |
US5296043A (en) * | 1990-02-16 | 1994-03-22 | Canon Kabushiki Kaisha | Multi-cells integrated solar cell module and process for producing the same |
JP3889470B2 (ja) * | 1997-03-13 | 2007-03-07 | 三洋電機株式会社 | 太陽電池およびその製造方法 |
JP4101606B2 (ja) * | 2002-10-16 | 2008-06-18 | 三菱重工業株式会社 | 薄膜太陽電池モジュール |
AU2005224794B2 (en) * | 2004-03-16 | 2009-12-17 | Vhf Technologies Sa | Electric energy generating modules with a two-dimensional profile and method of fabricating the same |
JP4448371B2 (ja) * | 2004-04-19 | 2010-04-07 | シャープ株式会社 | 光源一体型太陽電池モジュールおよびそれを用いた発電発光ユニット |
DE102007062620A1 (de) * | 2007-12-22 | 2009-07-09 | Schott Solar Gmbh | Verfahren und Vorrichtung zur Herstellung eines semitransparenten photovoltaischen Moduls |
JP4633173B2 (ja) * | 2009-01-30 | 2011-02-16 | シャープ株式会社 | 太陽電池モジュールの製造方法 |
-
2010
- 2010-10-20 US US13/503,474 patent/US20120204932A1/en not_active Abandoned
- 2010-10-20 WO PCT/JP2010/068516 patent/WO2011055634A1/ja active Application Filing
- 2010-10-20 CN CN201080049952.2A patent/CN102630347B/zh not_active Expired - Fee Related
- 2010-10-20 JP JP2011539331A patent/JP5174972B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068542A (ja) * | 1998-08-26 | 2000-03-03 | Sharp Corp | 集積型薄膜太陽電池モジュール |
JP2001053318A (ja) * | 1999-08-06 | 2001-02-23 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュール |
JP2002359381A (ja) * | 2001-05-31 | 2002-12-13 | Canon Inc | 光起電力素子及びその製造方法 |
JP2009081317A (ja) * | 2007-09-27 | 2009-04-16 | Kyocera Corp | 太陽電池モジュールおよびその製造方法 |
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Publication number | Publication date |
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CN102630347A (zh) | 2012-08-08 |
US20120204932A1 (en) | 2012-08-16 |
WO2011055634A1 (ja) | 2011-05-12 |
JPWO2011055634A1 (ja) | 2013-03-28 |
CN102630347B (zh) | 2016-03-02 |
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