JP5172352B2 - パルス化高周波源電力を使用する選択プラズマ再酸化プロセス - Google Patents

パルス化高周波源電力を使用する選択プラズマ再酸化プロセス Download PDF

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JP5172352B2
JP5172352B2 JP2007554154A JP2007554154A JP5172352B2 JP 5172352 B2 JP5172352 B2 JP 5172352B2 JP 2007554154 A JP2007554154 A JP 2007554154A JP 2007554154 A JP2007554154 A JP 2007554154A JP 5172352 B2 JP5172352 B2 JP 5172352B2
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plasma
duty cycle
oxide
limiting
substrate
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JP2008529314A (ja
JP2008529314A5 (enExample
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タイ， チェン シュア，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007554154A 2005-02-02 2006-01-30 パルス化高周波源電力を使用する選択プラズマ再酸化プロセス Expired - Fee Related JP5172352B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/050,471 2005-02-02
US11/050,471 US7141514B2 (en) 2005-02-02 2005-02-02 Selective plasma re-oxidation process using pulsed RF source power
PCT/US2006/003250 WO2006083778A2 (en) 2005-02-02 2006-01-30 Selective plasma re-oxidation process using pulsed rf source power

Publications (3)

Publication Number Publication Date
JP2008529314A JP2008529314A (ja) 2008-07-31
JP2008529314A5 JP2008529314A5 (enExample) 2012-09-13
JP5172352B2 true JP5172352B2 (ja) 2013-03-27

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JP2007554154A Expired - Fee Related JP5172352B2 (ja) 2005-02-02 2006-01-30 パルス化高周波源電力を使用する選択プラズマ再酸化プロセス

Country Status (5)

Country Link
US (1) US7141514B2 (enExample)
EP (1) EP1851795A4 (enExample)
JP (1) JP5172352B2 (enExample)
KR (1) KR20070097558A (enExample)
WO (1) WO2006083778A2 (enExample)

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US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
KR100951559B1 (ko) * 2007-01-03 2010-04-09 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US8008166B2 (en) * 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
US8236706B2 (en) * 2008-12-12 2012-08-07 Mattson Technology, Inc. Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
US8435906B2 (en) * 2009-01-28 2013-05-07 Applied Materials, Inc. Methods for forming conformal oxide layers on semiconductor devices
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
WO2012112187A1 (en) * 2011-02-15 2012-08-23 Applied Materials, Inc. Method and apparatus for multizone plasma generation
JP6254098B2 (ja) 2012-02-13 2017-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の選択性酸化のための方法および装置
KR101994820B1 (ko) * 2012-07-26 2019-07-02 에스케이하이닉스 주식회사 실리콘함유막과 금속함유막이 적층된 반도체 구조물 및 그의 제조 방법
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

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US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
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Also Published As

Publication number Publication date
EP1851795A4 (en) 2009-06-17
WO2006083778A3 (en) 2006-11-09
JP2008529314A (ja) 2008-07-31
EP1851795A2 (en) 2007-11-07
KR20070097558A (ko) 2007-10-04
US20060172550A1 (en) 2006-08-03
US7141514B2 (en) 2006-11-28
WO2006083778A2 (en) 2006-08-10

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