KR20070097558A - 펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스 - Google Patents

펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스 Download PDF

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Publication number
KR20070097558A
KR20070097558A KR1020077017554A KR20077017554A KR20070097558A KR 20070097558 A KR20070097558 A KR 20070097558A KR 1020077017554 A KR1020077017554 A KR 1020077017554A KR 20077017554 A KR20077017554 A KR 20077017554A KR 20070097558 A KR20070097558 A KR 20070097558A
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South Korea
Prior art keywords
plasma
duty cycle
limiting
oxide
substrate
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Abandoned
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KR1020077017554A
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English (en)
Korean (ko)
Inventor
타이 쳉 추아
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20070097558A publication Critical patent/KR20070097558A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077017554A 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스 Abandoned KR20070097558A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/050,471 2005-02-02
US11/050,471 US7141514B2 (en) 2005-02-02 2005-02-02 Selective plasma re-oxidation process using pulsed RF source power

Publications (1)

Publication Number Publication Date
KR20070097558A true KR20070097558A (ko) 2007-10-04

Family

ID=36757157

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077017554A Abandoned KR20070097558A (ko) 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 선택적인 플라즈마재-산화 프로세스

Country Status (5)

Country Link
US (1) US7141514B2 (enExample)
EP (1) EP1851795A4 (enExample)
JP (1) JP5172352B2 (enExample)
KR (1) KR20070097558A (enExample)
WO (1) WO2006083778A2 (enExample)

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US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
KR100951559B1 (ko) * 2007-01-03 2010-04-09 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US8008166B2 (en) * 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
US8236706B2 (en) * 2008-12-12 2012-08-07 Mattson Technology, Inc. Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
US8435906B2 (en) * 2009-01-28 2013-05-07 Applied Materials, Inc. Methods for forming conformal oxide layers on semiconductor devices
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
WO2012112187A1 (en) * 2011-02-15 2012-08-23 Applied Materials, Inc. Method and apparatus for multizone plasma generation
JP6254098B2 (ja) 2012-02-13 2017-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の選択性酸化のための方法および装置
KR101994820B1 (ko) * 2012-07-26 2019-07-02 에스케이하이닉스 주식회사 실리콘함유막과 금속함유막이 적층된 반도체 구조물 및 그의 제조 방법
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH0974196A (ja) * 1995-09-06 1997-03-18 Ricoh Co Ltd 半導体装置の製造方法
US5872052A (en) * 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
WO1999004911A1 (en) * 1997-07-28 1999-02-04 Massachusetts Institute Of Technology Pyrolytic chemical vapor deposition of silicone films
JP3141827B2 (ja) * 1997-11-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
US6355580B1 (en) * 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
JP2000332245A (ja) * 1999-05-25 2000-11-30 Sony Corp 半導体装置の製造方法及びｐ形半導体素子の製造方法
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
JP3505493B2 (ja) * 1999-09-16 2004-03-08 松下電器産業株式会社 半導体装置の製造方法
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
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US20040137243A1 (en) * 2002-10-21 2004-07-15 Massachusetts Institute Of Technology Chemical vapor deposition of organosilicate thin films
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Also Published As

Publication number Publication date
EP1851795A4 (en) 2009-06-17
WO2006083778A3 (en) 2006-11-09
JP2008529314A (ja) 2008-07-31
EP1851795A2 (en) 2007-11-07
US20060172550A1 (en) 2006-08-03
US7141514B2 (en) 2006-11-28
JP5172352B2 (ja) 2013-03-27
WO2006083778A2 (en) 2006-08-10

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