JP5160650B2 - 発光モジュール及び熱保護方法 - Google Patents
発光モジュール及び熱保護方法 Download PDFInfo
- Publication number
- JP5160650B2 JP5160650B2 JP2010537578A JP2010537578A JP5160650B2 JP 5160650 B2 JP5160650 B2 JP 5160650B2 JP 2010537578 A JP2010537578 A JP 2010537578A JP 2010537578 A JP2010537578 A JP 2010537578A JP 5160650 B2 JP5160650 B2 JP 5160650B2
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- JP
- Japan
- Prior art keywords
- light emitting
- thermal switch
- conductive material
- emitting device
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000013021 overheating Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 5
- 239000012811 non-conductive material Substances 0.000 claims 5
- 239000000463 material Substances 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (5)
- 接合部を持つ半導体発光装置と、
前記半導体発光装置を分路するように配されている熱スイッチと、
を有する発光モジュールであって、
前記熱スイッチは、熱膨張係数α h を有する導電性材料と、α h >α l である熱膨張係数α l を有する非導電性材料とを有し、
前記導電性材料は、前記非導電性材料上で2つの部分において設けられており、前記部分は、互いに離間して配され、間隙を形成しており、
前記熱スイッチは、前記接合部が動作条件下で臨界温度に到達するのを防止するように所定の分路温度において動作し、
前記間隙は、前記分路温度を規定する所定の大きさを有している、
発光モジュール。 - 前記導電性材料は金属を含有しており、前記非導電性材料はセラミックを含有している、請求項1に記載の発光モジュール。
- 前記熱スイッチは、半導体発光装置に隣接して位置決めされている、請求項1又は2に記載の発光モジュール。
- 前記半導体発光装置は、発光ダイオード又はレーザダイオードを有している、請求項1乃至3の何れか一項に記載の発光モジュール。
- 半導体発光装置を過熱から保護する方法であって、
接合部を持つ半導体発光装置を設けるステップと、
前記半導体発光装置を分路するように熱スイッチを設けるステップであって、前記熱スイッチは、熱膨張係数α h を有する導電性材料と、α h >α l である熱膨張係数α l を有する非導電性材料とを有し、前記導電性材料は、前記非導電性材料上で2つの部分において設けられており、前記部分は、互いに離間して配され、間隙を形成しており、前記熱スイッチは、前記接合部が動作条件下で臨界温度に到達するのを防止するように所定の分路温度において動作し、前記間隙は、前記分路温度を規定する所定の大きさを有している、ステップと、
を有する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07123317 | 2007-12-17 | ||
EP07123317.5 | 2007-12-17 | ||
PCT/IB2008/055190 WO2009077932A1 (en) | 2007-12-17 | 2008-12-10 | Light emitting module and thermal protection method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011507258A JP2011507258A (ja) | 2011-03-03 |
JP5160650B2 true JP5160650B2 (ja) | 2013-03-13 |
Family
ID=40469934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010537578A Active JP5160650B2 (ja) | 2007-12-17 | 2008-12-10 | 発光モジュール及び熱保護方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8743921B2 (ja) |
EP (1) | EP2225777B1 (ja) |
JP (1) | JP5160650B2 (ja) |
KR (1) | KR101477473B1 (ja) |
CN (1) | CN101904007B (ja) |
RU (1) | RU2491680C2 (ja) |
TW (1) | TWI453358B (ja) |
WO (1) | WO2009077932A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9781803B2 (en) | 2008-11-30 | 2017-10-03 | Cree, Inc. | LED thermal management system and method |
JP2011139044A (ja) * | 2009-12-01 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器、および照明装置 |
US9566758B2 (en) | 2010-10-19 | 2017-02-14 | Massachusetts Institute Of Technology | Digital flexural materials |
US9809001B2 (en) | 2010-10-19 | 2017-11-07 | Massachusetts Institute Of Technology | Flexural digital material construction and transduction |
US20140145522A1 (en) * | 2011-11-04 | 2014-05-29 | Massachusetts Institute Of Technology | Electromagnetic Digital Materials |
US9506485B2 (en) | 2011-11-04 | 2016-11-29 | Massachusetts Institute Of Technology | Hierarchical functional digital materials |
JP2013118073A (ja) * | 2011-12-02 | 2013-06-13 | Shikoku Instrumentation Co Ltd | 耐放射線特性に優れたledランプ |
WO2013192599A1 (en) | 2012-06-21 | 2013-12-27 | Massachusetts Institute Of Technology | Methods and apparatus for digital material skins |
FR3009653B1 (fr) * | 2013-08-09 | 2015-08-07 | Commissariat Energie Atomique | Dispositif de conversion d'energie thermique en energie electrique |
KR101553372B1 (ko) * | 2014-03-28 | 2015-09-15 | 전북대학교산학협력단 | 자발 보호 기능을 겸비한 발광 소자 |
KR101723714B1 (ko) * | 2014-10-24 | 2017-04-06 | 한국광기술원 | 발열 기능을 갖는 차량용 전조등 |
DE102015213460A1 (de) * | 2015-07-17 | 2017-01-19 | Osram Gmbh | Wellenlängenumwandlung von Primärlicht mittels eines Konversionskörpers |
DE102015112048A1 (de) | 2015-07-23 | 2017-01-26 | Osram Oled Gmbh | Optoelektronisches Bauteil und Verfahren zum Betrieb eines optoelektronischen Bauteils |
CN107275394B (zh) * | 2016-04-08 | 2020-08-14 | 株洲中车时代电气股份有限公司 | 一种功率半导体模块及其自保护方法 |
DE102018108412A1 (de) * | 2018-04-10 | 2019-10-10 | Siteco Beleuchtungstechnik Gmbh | Temperaturüberwachtes led-modul |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL87526A (en) * | 1984-03-05 | 1990-11-29 | Hughes Aircraft Co | Thermally activated,shorting diode switch having non-operationally-alterable junction path |
US4774558A (en) * | 1984-03-05 | 1988-09-27 | Hughes Aircraft Company | Thermally-activated, shorting diode switch having non-operationally-alterable junction path |
US4935315A (en) * | 1988-12-05 | 1990-06-19 | Hughes Aircraft Company | Cell bypass circuit |
JPH0735268Y2 (ja) * | 1989-04-14 | 1995-08-09 | ニベックス株式会社 | 温度スイッチ |
JP2781892B2 (ja) * | 1989-07-06 | 1998-07-30 | 石川島播磨重工業株式会社 | サーマルダイオード |
JP3613328B2 (ja) * | 2000-06-26 | 2005-01-26 | サンケン電気株式会社 | 半導体発光装置 |
US6505954B2 (en) | 2001-06-18 | 2003-01-14 | Excellence Opto. Inc. | Safe light emitting device |
EP1950490A3 (en) * | 2002-11-19 | 2008-08-13 | Dan Friis | Lighting body or source of light based on light-emitting diodes |
JP2004228384A (ja) * | 2003-01-23 | 2004-08-12 | Sumitomo Electric Ind Ltd | 発光モジュール及び通電制御方法 |
JPWO2005104249A1 (ja) | 2004-04-21 | 2007-08-30 | 松下電器産業株式会社 | 発光素子駆動用半導体チップ、発光装置、及び照明装置 |
JP2008509523A (ja) * | 2004-08-04 | 2008-03-27 | ン、ジェイムス、ケー. | Led照明装置 |
JP4265506B2 (ja) * | 2004-08-24 | 2009-05-20 | 日立電線株式会社 | 発光ダイオード |
DE102004047682A1 (de) * | 2004-09-30 | 2006-04-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | LED-Array |
KR100593934B1 (ko) * | 2005-03-23 | 2006-06-30 | 삼성전기주식회사 | 정전기 방전 보호 기능을 갖는 발광 다이오드 패키지 |
TWI279659B (en) * | 2005-12-27 | 2007-04-21 | Polytronics Technology Corp | LED with temperature control function |
CN2877183Y (zh) * | 2005-12-28 | 2007-03-07 | 程继金 | 一种发光装置 |
US7928459B2 (en) * | 2006-02-24 | 2011-04-19 | Seoul Semiconductor Co., Ltd. | Light emitting diode package including thermoelectric element |
CN2929457Y (zh) * | 2006-07-20 | 2007-08-01 | 高准企业有限公司 | 高效led照明路灯装置 |
-
2008
- 2008-12-10 US US12/747,170 patent/US8743921B2/en active Active
- 2008-12-10 KR KR1020107015902A patent/KR101477473B1/ko active IP Right Grant
- 2008-12-10 WO PCT/IB2008/055190 patent/WO2009077932A1/en active Application Filing
- 2008-12-10 JP JP2010537578A patent/JP5160650B2/ja active Active
- 2008-12-10 EP EP08862632.0A patent/EP2225777B1/en active Active
- 2008-12-10 RU RU2010129836/28A patent/RU2491680C2/ru active
- 2008-12-10 CN CN2008801212240A patent/CN101904007B/zh active Active
- 2008-12-15 TW TW097148794A patent/TWI453358B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2009077932A1 (en) | 2009-06-25 |
KR101477473B1 (ko) | 2014-12-30 |
TWI453358B (zh) | 2014-09-21 |
US20100260221A1 (en) | 2010-10-14 |
EP2225777A1 (en) | 2010-09-08 |
EP2225777B1 (en) | 2016-09-28 |
US8743921B2 (en) | 2014-06-03 |
JP2011507258A (ja) | 2011-03-03 |
CN101904007B (zh) | 2012-09-05 |
KR20100108387A (ko) | 2010-10-06 |
TW200944704A (en) | 2009-11-01 |
RU2010129836A (ru) | 2012-01-27 |
CN101904007A (zh) | 2010-12-01 |
RU2491680C2 (ru) | 2013-08-27 |
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