JP5159689B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP5159689B2
JP5159689B2 JP2009102833A JP2009102833A JP5159689B2 JP 5159689 B2 JP5159689 B2 JP 5159689B2 JP 2009102833 A JP2009102833 A JP 2009102833A JP 2009102833 A JP2009102833 A JP 2009102833A JP 5159689 B2 JP5159689 B2 JP 5159689B2
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Japan
Prior art keywords
light
substrate
layer
film
functional
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Expired - Fee Related
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JP2009102833A
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English (en)
Japanese (ja)
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JP2009283456A5 (https=
JP2009283456A (ja
Inventor
寿雄 池田
隆広 井辺
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009102833A priority Critical patent/JP5159689B2/ja
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Publication of JP2009283456A5 publication Critical patent/JP2009283456A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009102833A 2008-04-25 2009-04-21 発光装置の作製方法 Expired - Fee Related JP5159689B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009102833A JP5159689B2 (ja) 2008-04-25 2009-04-21 発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008114975 2008-04-25
JP2008114975 2008-04-25
JP2009102833A JP5159689B2 (ja) 2008-04-25 2009-04-21 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009283456A JP2009283456A (ja) 2009-12-03
JP2009283456A5 JP2009283456A5 (https=) 2012-06-07
JP5159689B2 true JP5159689B2 (ja) 2013-03-06

Family

ID=41215275

Family Applications (1)

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JP2009102833A Expired - Fee Related JP5159689B2 (ja) 2008-04-25 2009-04-21 発光装置の作製方法

Country Status (2)

Country Link
US (1) US8293319B2 (https=)
JP (1) JP5159689B2 (https=)

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JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US7993945B2 (en) * 2008-04-11 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5292263B2 (ja) * 2008-12-05 2013-09-18 株式会社半導体エネルギー研究所 成膜方法及び発光素子の作製方法
JP5361690B2 (ja) * 2009-12-11 2013-12-04 株式会社半導体エネルギー研究所 成膜用基板
TWI478333B (zh) * 2012-01-30 2015-03-21 Ind Tech Res Inst 雙面發光顯示面板
KR20150056112A (ko) * 2013-11-14 2015-05-26 삼성디스플레이 주식회사 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법
US9595497B2 (en) 2014-06-13 2017-03-14 Apple Inc. Display with low reflectivity alignment structures
DE102015119327A1 (de) * 2015-11-10 2017-05-11 Von Ardenne Gmbh Verfahren, Beschichtungsanordnung und Beschichtungsmaterial-Transfer-Maske
KR102772252B1 (ko) * 2018-12-31 2025-02-24 삼성디스플레이 주식회사 표시 장치

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KR100611145B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 풀칼라 유기 전계 발광 소자용 도너 필름, 도너 필름의제조 방법 및 이 도너 필름을 사용한 풀칼라 유기 전계발광 소자
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JP2007311093A (ja) * 2006-05-17 2007-11-29 Sony Corp 平面型表示装置、並びに、スペーサ
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KR101563237B1 (ko) * 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
KR20090028413A (ko) * 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판
US8153201B2 (en) * 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
KR20090041314A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
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Also Published As

Publication number Publication date
US20090269485A1 (en) 2009-10-29
JP2009283456A (ja) 2009-12-03
US8293319B2 (en) 2012-10-23

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