JP5147196B2 - 素子基板 - Google Patents
素子基板 Download PDFInfo
- Publication number
- JP5147196B2 JP5147196B2 JP2006147590A JP2006147590A JP5147196B2 JP 5147196 B2 JP5147196 B2 JP 5147196B2 JP 2006147590 A JP2006147590 A JP 2006147590A JP 2006147590 A JP2006147590 A JP 2006147590A JP 5147196 B2 JP5147196 B2 JP 5147196B2
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- JP
- Japan
- Prior art keywords
- evaluation
- oscillation
- wiring
- circuit
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 title claims description 56
- 230000010355 oscillation Effects 0.000 claims description 278
- 238000011156 evaluation Methods 0.000 claims description 227
- 239000004065 semiconductor Substances 0.000 claims description 137
- 238000005259 measurement Methods 0.000 claims description 118
- 238000000034 method Methods 0.000 claims description 35
- 239000003990 capacitor Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 18
- 239000010410 layer Substances 0.000 description 105
- 239000010408 film Substances 0.000 description 72
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- 239000000523 sample Substances 0.000 description 12
- 208000022010 Lhermitte-Duclos disease Diseases 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
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- 239000000843 powder Substances 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000001131 transforming effect Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006147590A JP5147196B2 (ja) | 2005-06-01 | 2006-05-29 | 素子基板 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005160947 | 2005-06-01 | ||
| JP2005160947 | 2005-06-01 | ||
| JP2006147590A JP5147196B2 (ja) | 2005-06-01 | 2006-05-29 | 素子基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007013119A JP2007013119A (ja) | 2007-01-18 |
| JP2007013119A5 JP2007013119A5 (enrdf_load_stackoverflow) | 2009-07-09 |
| JP5147196B2 true JP5147196B2 (ja) | 2013-02-20 |
Family
ID=37751148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006147590A Expired - Fee Related JP5147196B2 (ja) | 2005-06-01 | 2006-05-29 | 素子基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5147196B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9252793B2 (en) | 2010-11-29 | 2016-02-02 | Renesas Electronics Corporation | Semiconductor device |
| TWI563640B (en) * | 2014-08-22 | 2016-12-21 | Innolux Corp | Array substrate of display panel |
| TWI567950B (zh) * | 2015-01-08 | 2017-01-21 | 群創光電股份有限公司 | 顯示面板 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63186461A (ja) * | 1987-01-29 | 1988-08-02 | Nec Corp | 大規模集積回路 |
| JPS63314859A (ja) * | 1987-06-17 | 1988-12-22 | Mitsubishi Electric Corp | 半導体装置 |
| JPH05133926A (ja) * | 1991-07-03 | 1993-05-28 | Nippondenso Co Ltd | 液体混合比率検出装置 |
| JPH0629478A (ja) * | 1992-07-08 | 1994-02-04 | Nec Corp | 半導体集積回路装置 |
| JP3123454B2 (ja) * | 1997-02-25 | 2001-01-09 | 日本電気株式会社 | 半導体集積回路 |
| JPH118196A (ja) * | 1997-06-13 | 1999-01-12 | Semiconductor Energy Lab Co Ltd | 半導体薄膜および半導体装置 |
| JP2001053282A (ja) * | 1999-08-11 | 2001-02-23 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ基板及びその検査方法 |
| JP2005057256A (ja) * | 2003-08-04 | 2005-03-03 | Samsung Electronics Co Ltd | 漏洩電流を利用した半導体検査装置および漏洩電流補償システム |
-
2006
- 2006-05-29 JP JP2006147590A patent/JP5147196B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007013119A (ja) | 2007-01-18 |
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