JP5143350B2 - 電荷トラップ膜を有する不揮発性メモリセル構造物及びその製造方法 - Google Patents

電荷トラップ膜を有する不揮発性メモリセル構造物及びその製造方法 Download PDF

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JP5143350B2
JP5143350B2 JP2005307440A JP2005307440A JP5143350B2 JP 5143350 B2 JP5143350 B2 JP 5143350B2 JP 2005307440 A JP2005307440 A JP 2005307440A JP 2005307440 A JP2005307440 A JP 2005307440A JP 5143350 B2 JP5143350 B2 JP 5143350B2
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Prior art keywords
charge trapping
film
gate electrode
dielectric film
source
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Expired - Fee Related
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JP2005307440A
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English (en)
Japanese (ja)
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JP2006121094A5 (enExample
JP2006121094A (ja
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相秀 金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020050001267A external-priority patent/KR100714473B1/ko
Priority claimed from US11/167,051 external-priority patent/US7446371B2/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006121094A publication Critical patent/JP2006121094A/ja
Publication of JP2006121094A5 publication Critical patent/JP2006121094A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2005307440A 2004-10-21 2005-10-21 電荷トラップ膜を有する不揮発性メモリセル構造物及びその製造方法 Expired - Fee Related JP5143350B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US62081104P 2004-10-21 2004-10-21
US60/620,811 2004-10-21
KR10-2005-0001267 2005-01-06
KR1020050001267A KR100714473B1 (ko) 2004-10-21 2005-01-06 비휘발성 메모리 소자 및 그 제조 방법
US11/167,051 2005-06-24
US11/167,051 US7446371B2 (en) 2004-10-21 2005-06-24 Non-volatile memory cell structure with charge trapping layers and method of fabricating the same

Publications (3)

Publication Number Publication Date
JP2006121094A JP2006121094A (ja) 2006-05-11
JP2006121094A5 JP2006121094A5 (enExample) 2008-11-27
JP5143350B2 true JP5143350B2 (ja) 2013-02-13

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JP2005307440A Expired - Fee Related JP5143350B2 (ja) 2004-10-21 2005-10-21 電荷トラップ膜を有する不揮発性メモリセル構造物及びその製造方法

Country Status (2)

Country Link
JP (1) JP5143350B2 (enExample)
DE (1) DE102005051492B4 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158093A (ja) * 2005-12-06 2007-06-21 Sony Corp 不揮発性半導体メモリデバイス及びその製造方法
JP5205011B2 (ja) 2007-08-24 2013-06-05 ルネサスエレクトロニクス株式会社 不揮発性半導体装置およびその製造方法
JP4599421B2 (ja) * 2008-03-03 2010-12-15 株式会社東芝 半導体装置及びその製造方法
JP2011071334A (ja) * 2009-09-25 2011-04-07 Toshiba Corp 不揮発性半導体記憶装置
JP2013058810A (ja) * 2012-12-27 2013-03-28 Renesas Electronics Corp 不揮発性半導体装置およびその製造方法
JP6510289B2 (ja) * 2015-03-30 2019-05-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318709A (ja) * 1993-03-12 1994-11-15 Citizen Watch Co Ltd 半導体不揮発性記憶装置およびその製造方法
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
US6531350B2 (en) * 2001-02-22 2003-03-11 Halo, Inc. Twin MONOS cell fabrication method and array organization
US6639271B1 (en) * 2001-12-20 2003-10-28 Advanced Micro Devices, Inc. Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same
US6756271B1 (en) * 2002-03-12 2004-06-29 Halo Lsi, Inc. Simplified twin monos fabrication method with three extra masks to standard CMOS
JP4647175B2 (ja) * 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2004303918A (ja) * 2003-03-31 2004-10-28 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2005064178A (ja) * 2003-08-11 2005-03-10 Renesas Technology Corp 半導体装置およびその製造方法

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DE102005051492B4 (de) 2008-02-28
DE102005051492A1 (de) 2006-04-27
JP2006121094A (ja) 2006-05-11

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