JP5138248B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP5138248B2
JP5138248B2 JP2007076845A JP2007076845A JP5138248B2 JP 5138248 B2 JP5138248 B2 JP 5138248B2 JP 2007076845 A JP2007076845 A JP 2007076845A JP 2007076845 A JP2007076845 A JP 2007076845A JP 5138248 B2 JP5138248 B2 JP 5138248B2
Authority
JP
Japan
Prior art keywords
layer
region
pad electrode
metal layer
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007076845A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008235786A (ja
JP2008235786A5 (https=
Inventor
芳正 天辰
実 赤石
聡 小内
克也 岡部
芳明 佐野
彰 山根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
On Semiconductor Trading Ltd
Original Assignee
On Semiconductor Trading Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by On Semiconductor Trading Ltd filed Critical On Semiconductor Trading Ltd
Priority to JP2007076845A priority Critical patent/JP5138248B2/ja
Priority to US12/053,168 priority patent/US8013442B2/en
Publication of JP2008235786A publication Critical patent/JP2008235786A/ja
Publication of JP2008235786A5 publication Critical patent/JP2008235786A5/ja
Application granted granted Critical
Publication of JP5138248B2 publication Critical patent/JP5138248B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007076845A 2007-03-23 2007-03-23 半導体装置及びその製造方法 Active JP5138248B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007076845A JP5138248B2 (ja) 2007-03-23 2007-03-23 半導体装置及びその製造方法
US12/053,168 US8013442B2 (en) 2007-03-23 2008-03-21 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007076845A JP5138248B2 (ja) 2007-03-23 2007-03-23 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008235786A JP2008235786A (ja) 2008-10-02
JP2008235786A5 JP2008235786A5 (https=) 2010-04-02
JP5138248B2 true JP5138248B2 (ja) 2013-02-06

Family

ID=39773859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007076845A Active JP5138248B2 (ja) 2007-03-23 2007-03-23 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US8013442B2 (https=)
JP (1) JP5138248B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244134A (ja) * 2007-03-27 2008-10-09 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5192171B2 (ja) * 2007-04-17 2013-05-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP4987823B2 (ja) * 2008-08-29 2012-07-25 株式会社東芝 半導体装置
US20110042803A1 (en) * 2009-08-24 2011-02-24 Chen-Fu Chu Method For Fabricating A Through Interconnect On A Semiconductor Substrate
JP2013171928A (ja) * 2012-02-20 2013-09-02 Tdk Corp 多層端子電極および電子部品
US20140264855A1 (en) * 2013-03-13 2014-09-18 Macronix International Co., Ltd. Semiconductor composite layer structure and semiconductor packaging structure having the same thereof
KR102179167B1 (ko) 2018-11-13 2020-11-16 삼성전자주식회사 반도체 패키지

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621249A (ja) * 1985-06-26 1987-01-07 Nec Corp 半導体装置
JPH01184938A (ja) * 1988-01-20 1989-07-24 Fujitsu Ltd 半導体装置及びその製造方法
JPH0669208A (ja) * 1991-03-12 1994-03-11 Oki Electric Ind Co Ltd 半導体装置
US5641703A (en) * 1991-07-25 1997-06-24 Massachusetts Institute Of Technology Voltage programmable links for integrated circuits
JP2697592B2 (ja) * 1993-12-03 1998-01-14 日本電気株式会社 半導体装置のパッド構造
JPH09219450A (ja) 1996-02-09 1997-08-19 Denso Corp 半導体装置の製造方法
JP3641111B2 (ja) * 1997-08-28 2005-04-20 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3320644B2 (ja) 1997-11-05 2002-09-03 松下電器産業株式会社 半導体装置
JP2974022B1 (ja) * 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
JP3629375B2 (ja) * 1998-11-27 2005-03-16 新光電気工業株式会社 多層回路基板の製造方法
US6500750B1 (en) * 1999-04-05 2002-12-31 Motorola, Inc. Semiconductor device and method of formation
JP2002319587A (ja) * 2001-04-23 2002-10-31 Seiko Instruments Inc 半導体装置
AU2003266560A1 (en) * 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
US6927493B2 (en) * 2003-10-03 2005-08-09 Texas Instruments Incorporated Sealing and protecting integrated circuit bonding pads
KR100605315B1 (ko) * 2004-07-30 2006-07-28 삼성전자주식회사 집적회로 칩의 입출력 패드 구조
JP4606145B2 (ja) * 2004-12-09 2011-01-05 セイコーエプソン株式会社 半導体装置及びその製造方法
US8592977B2 (en) * 2006-06-28 2013-11-26 Megit Acquisition Corp. Integrated circuit (IC) chip and method for fabricating the same
JP2008244134A (ja) * 2007-03-27 2008-10-09 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5192171B2 (ja) * 2007-04-17 2013-05-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US8013442B2 (en) 2011-09-06
US20080230899A1 (en) 2008-09-25
JP2008235786A (ja) 2008-10-02

Similar Documents

Publication Publication Date Title
JP5138248B2 (ja) 半導体装置及びその製造方法
US8217516B2 (en) Semiconductor device and method of manufacturing the same
JP5581005B2 (ja) 半導体装置の製造方法
US9793228B2 (en) Semiconductor device and method of manufacturing the semiconductor device
US6498090B2 (en) Semiconductor devices and methods for manufacturing the same
JP2011014605A (ja) 半導体装置およびその製造方法
JP2010161215A (ja) 半導体装置及びその製造方法
JP3659112B2 (ja) 半導体装置およびその製造方法
US20080237853A1 (en) Semiconductor device and manufacturing method of the same
JP2010251687A (ja) 半導体装置
JP5192171B2 (ja) 半導体装置及びその製造方法
JP2009088002A (ja) 半導体装置及びその製造方法
CN111524818A (zh) 电子器件及其制造方法
JP2008091457A (ja) 半導体装置及び半導体装置の製造方法
JP2616063B2 (ja) バンプ電極の製造方法
JP2011018832A (ja) 半導体装置及びその製造方法
JP5882014B2 (ja) 半導体装置
JP4747508B2 (ja) 半導体装置
JP2010287750A (ja) 半導体装置及びその製造方法
JP2002246411A (ja) 半導体装置及びその製造方法
JPS6115350A (ja) 半導体装置
JP2009239193A (ja) 半導体装置及びその製造方法
JP2009088001A (ja) 半導体装置及びその製造方法
JP2010129947A (ja) 半導体装置及びその製造方法
JP4702827B2 (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100215

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100215

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110608

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111102

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120206

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121023

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121114

R150 Certificate of patent or registration of utility model

Ref document number: 5138248

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250