JP5136278B2 - シリコン単結晶の製造方法 - Google Patents

シリコン単結晶の製造方法 Download PDF

Info

Publication number
JP5136278B2
JP5136278B2 JP2008209793A JP2008209793A JP5136278B2 JP 5136278 B2 JP5136278 B2 JP 5136278B2 JP 2008209793 A JP2008209793 A JP 2008209793A JP 2008209793 A JP2008209793 A JP 2008209793A JP 5136278 B2 JP5136278 B2 JP 5136278B2
Authority
JP
Japan
Prior art keywords
silicon
single crystal
quartz crucible
silicon single
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008209793A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010042968A (ja
JP2010042968A5 (enExample
Inventor
純 古川
裕文 榎本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2008209793A priority Critical patent/JP5136278B2/ja
Publication of JP2010042968A publication Critical patent/JP2010042968A/ja
Publication of JP2010042968A5 publication Critical patent/JP2010042968A5/ja
Application granted granted Critical
Publication of JP5136278B2 publication Critical patent/JP5136278B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP2008209793A 2008-08-18 2008-08-18 シリコン単結晶の製造方法 Active JP5136278B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008209793A JP5136278B2 (ja) 2008-08-18 2008-08-18 シリコン単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008209793A JP5136278B2 (ja) 2008-08-18 2008-08-18 シリコン単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2010042968A JP2010042968A (ja) 2010-02-25
JP2010042968A5 JP2010042968A5 (enExample) 2011-09-22
JP5136278B2 true JP5136278B2 (ja) 2013-02-06

Family

ID=42014682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008209793A Active JP5136278B2 (ja) 2008-08-18 2008-08-18 シリコン単結晶の製造方法

Country Status (1)

Country Link
JP (1) JP5136278B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6451333B2 (ja) * 2015-01-14 2019-01-16 株式会社Sumco シリコン単結晶の製造方法
KR101733698B1 (ko) 2015-11-30 2017-05-08 한국세라믹기술원 용액성장용 도가니 및 도가니 내의 용액성장 방법
JP7359720B2 (ja) 2020-02-28 2023-10-11 信越石英株式会社 測定冶具及び測定方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003104711A (ja) * 2001-09-28 2003-04-09 Mitsubishi Materials Polycrystalline Silicon Corp ルツボ型多結晶シリコン
US6605149B2 (en) * 2002-01-11 2003-08-12 Hemlock Semiconductor Corporation Method of stacking polycrystalline silicon in process for single crystal production
JP4454003B2 (ja) * 2002-07-05 2010-04-21 Sumco Techxiv株式会社 単結晶引上げ装置の原料供給装置
JP4699872B2 (ja) * 2005-11-09 2011-06-15 Sumco Techxiv株式会社 単結晶の製造方法
JP2009018967A (ja) * 2007-07-12 2009-01-29 Sharp Corp 固体原料融解方法および結晶成長方法

Also Published As

Publication number Publication date
JP2010042968A (ja) 2010-02-25

Similar Documents

Publication Publication Date Title
KR101153907B1 (ko) 결정 성장 장치 및 결정 성장 방법
JP5309170B2 (ja) るつぼに含まれた融液からシリコンから成る単結晶を引き上げる方法、及びこの方法によって製造された単結晶
JP5399212B2 (ja) シリコン単結晶の製造方法
JP6579046B2 (ja) シリコン単結晶の製造方法
JP7826309B2 (ja) 坩堝の腐食を低減させた単結晶シリコンインゴットを形成する方法
JP2010042968A (ja) シリコン単結晶の製造方法
US20060191468A1 (en) Process for producing single crystal
JP2009132552A (ja) シリコン単結晶の製造方法
JP2011057460A (ja) シリコン単結晶の育成方法
CN109415842A (zh) 单晶硅的制造方法
US7628854B2 (en) Process for producing silicon single crystal
JP5167942B2 (ja) シリコン単結晶の製造方法
JP2013121891A (ja) 単結晶の製造方法
JP2007022865A (ja) シリコン単結晶の製造方法
KR101134499B1 (ko) 이중가이더를 구비하는 실리콘 단결정 잉곳 형성장치
JP5150865B2 (ja) シリコン単結晶インゴットの製造方法
JP4038750B2 (ja) 結晶成長方法
JP2002128593A (ja) シリコンウェーハの製造方法及びその方法により製造されたシリコンウェーハ
JP2023135234A (ja) シリコン単結晶の製造方法
TW202140869A (zh) 單晶矽的製造方法
JP2008087994A (ja) シリコン種結晶およびシリコン単結晶の製造方法
JP2013032282A (ja) シリコン単結晶インゴット
TW201636465A (zh) 矽單結晶之製造方法
JP2010018500A (ja) シリコン単結晶の育成方法およびシリコン単結晶
JP2002134519A (ja) シリコンウェーハを製造する方法及びその方法により製造されたシリコンウェーハ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110809

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110809

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120605

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120802

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121016

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121029

R150 Certificate of patent or registration of utility model

Ref document number: 5136278

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250