JP5134119B2 - 光散乱を強化した発光素子 - Google Patents
光散乱を強化した発光素子 Download PDFInfo
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- JP5134119B2 JP5134119B2 JP2011183905A JP2011183905A JP5134119B2 JP 5134119 B2 JP5134119 B2 JP 5134119B2 JP 2011183905 A JP2011183905 A JP 2011183905A JP 2011183905 A JP2011183905 A JP 2011183905A JP 5134119 B2 JP5134119 B2 JP 5134119B2
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- textured
- light emitting
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- 238000000149 argon plasma sintering Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 5
- 239000002178 crystalline material Substances 0.000 claims 4
- 230000002349 favourable effect Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- -1 thickness Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 101150077190 sinI gene Proteins 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
テクスチャ加工層を組み込んだ素子は、幾つかの異なる方法によって形成することができる。第1の方法では、エピタキシアル層が堆積され、次にエッチングしてテクスチャ加工層を形成する。第2の方法では、マスクを堆積させ、マスクに開口部を生成するためにパターン化する。次に、マスクに形成した開口内にテクスチャ加工層が選択的に堆積される。第3の方法では、テクスチャ加工層は、三次元の成長に有利な条件下で堆積され、次に任意選択的に焼き鈍しされる。
テクスチャ加工層37は、図2Aから図2Cに示されているように活性領域31のn型側か、又は図2Dに示されているように活性領域31のp型側に配置されてもよい。一般的に、活性領域31は平面である。
図2Dは、テクスチャ加工層37が活性領域31のp型側に配置された構造を示している。テクスチャ加工層37は、活性領域31上に直接形成しても良いし、又は、p型領域34の一部分34A又はp型領域34とは別の追加層によって活性領域31から分離されても良い。図2Dに示されている構造の一例では、層34Aは、p型ドープ処理したAlGaN層、テクスチャ加工層37は、AlGaN層、及び、平坦化層39及びp型層24Bは、p型GaN層とすることができる。
三次元及び横方向に成長させる技術は、本明細書において引用により組み込まれる、J・ハン他著「GaN有機金属化学蒸着時の形態進化に対するH2の影響」、応用物理学レター、71(21)、3114〜3116ページ(1997年、11月24日)において更に詳細に検討されている。
当業者には、上述の説明及び添付の図面から、本発明に対する様々な変形が明らかになるであろう。従って、本発明は、特許請求の範囲によってのみ限定されるものとする。
32 基板
33 n型領域
34 p型領域
37 テクスチャ加工層
101 n接点
102 p接点
Claims (9)
- 基板上に半導体層を成長させ、
前記半導体層のより小さくより安定性のない結晶を選択的にエッチングして取り除くように選択されたエッチャントガスで前記半導体層の一部分をエッチングして取り除き、より大きくより安定した結晶を残して、材料の不連続なアイランドを形成し、
前記材料の不連続なアイランド上に異なる屈折率を有するIII族窒化物層を成長させ、
実質的に平坦な発光領域を成長させる
ことを特徴とする方法。 - 前記エッチャントは、H2,N2,NH3,HCl及びその混合物から選択されることを特徴とする請求項1記載の方法。
- 前記材料の不連続なアイランドの屈折率は、前記III族窒化物層の屈折率よりも小さいことを特徴とする請求項1記載の方法。
- 前記材料の不連続なアイランドは、AlGaN又はAlNであることを特徴とする請求項1記載の方法。
- テクスチャ加工半導体層を形成する工程を有し、この形成工程は、
基板上に材料層を堆積させる工程と、
前記材料層をアニーリングして結晶性材料を形成する工程と、を含み、
前記結晶性材料上に、異なる屈折率を有するIII族窒化物層を成長させる工程と、
実質的に平坦な発光領域を成長させる工程と、を含む
ことを特徴とする方法。 - 基板上に材料層を堆積させる工程は、三次元の成長に好都合な条件下で材料層を成長させる工程を含むことを特徴とする請求項5記載の方法。
- 前記結晶性材料の大きく安定した粒子を取り囲む前記結晶性材料の一部分をエッチングして取り除く工程を更に含むことを特徴とする請求項5記載の方法。
- 前記テクスチャ加工半導体層上に共形層を堆積させる工程を更に含むことを特徴とする請求項5記載の方法。
- 材料層を堆積する工程は、AlN又はAlGaNを堆積させる工程を含むことを特徴とする請求項5記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/317956 | 2002-12-11 | ||
US10/317,956 US7071494B2 (en) | 2002-12-11 | 2002-12-11 | Light emitting device with enhanced optical scattering |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003411688A Division JP2004193619A (ja) | 2002-12-11 | 2003-12-10 | 光散乱を強化した発光素子 |
Publications (2)
Publication Number | Publication Date |
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JP2011238972A JP2011238972A (ja) | 2011-11-24 |
JP5134119B2 true JP5134119B2 (ja) | 2013-01-30 |
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JP2003411688A Pending JP2004193619A (ja) | 2002-12-11 | 2003-12-10 | 光散乱を強化した発光素子 |
JP2011183905A Expired - Lifetime JP5134119B2 (ja) | 2002-12-11 | 2011-08-25 | 光散乱を強化した発光素子 |
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JP2003411688A Pending JP2004193619A (ja) | 2002-12-11 | 2003-12-10 | 光散乱を強化した発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7071494B2 (ja) |
EP (1) | EP1429396B1 (ja) |
JP (2) | JP2004193619A (ja) |
TW (1) | TW200414573A (ja) |
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-
2002
- 2002-12-11 US US10/317,956 patent/US7071494B2/en not_active Expired - Lifetime
-
2003
- 2003-11-07 EP EP03104120.5A patent/EP1429396B1/en not_active Expired - Lifetime
- 2003-12-08 TW TW092134565A patent/TW200414573A/zh unknown
- 2003-12-10 JP JP2003411688A patent/JP2004193619A/ja active Pending
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EP1429396B1 (en) | 2019-06-19 |
US20040113163A1 (en) | 2004-06-17 |
JP2004193619A (ja) | 2004-07-08 |
TW200414573A (en) | 2004-08-01 |
US7071494B2 (en) | 2006-07-04 |
JP2011238972A (ja) | 2011-11-24 |
EP1429396A1 (en) | 2004-06-16 |
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