JP5133963B2 - セラミック基板 - Google Patents
セラミック基板 Download PDFInfo
- Publication number
- JP5133963B2 JP5133963B2 JP2009252854A JP2009252854A JP5133963B2 JP 5133963 B2 JP5133963 B2 JP 5133963B2 JP 2009252854 A JP2009252854 A JP 2009252854A JP 2009252854 A JP2009252854 A JP 2009252854A JP 5133963 B2 JP5133963 B2 JP 5133963B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silver
- nickel
- metal
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000919 ceramic Substances 0.000 title claims description 90
- 239000000758 substrate Substances 0.000 title claims description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 232
- 238000007747 plating Methods 0.000 claims description 137
- 229910052759 nickel Inorganic materials 0.000 claims description 116
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 105
- 229910052709 silver Inorganic materials 0.000 claims description 101
- 239000004332 silver Substances 0.000 claims description 101
- 229910052751 metal Inorganic materials 0.000 claims description 98
- 239000002184 metal Substances 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 15
- 150000002739 metals Chemical class 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 39
- 229910052737 gold Inorganic materials 0.000 description 38
- 239000010931 gold Substances 0.000 description 38
- 239000000463 material Substances 0.000 description 16
- 238000005219 brazing Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009252854A JP5133963B2 (ja) | 2004-12-03 | 2009-11-04 | セラミック基板 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004350927 | 2004-12-03 | ||
JP2004350927 | 2004-12-03 | ||
JP2005084449 | 2005-03-23 | ||
JP2005084449 | 2005-03-23 | ||
JP2009252854A JP5133963B2 (ja) | 2004-12-03 | 2009-11-04 | セラミック基板 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005343890A Division JP2006303419A (ja) | 2004-12-03 | 2005-11-29 | セラミック基板 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010028146A JP2010028146A (ja) | 2010-02-04 |
JP2010028146A5 JP2010028146A5 (enrdf_load_stackoverflow) | 2011-03-31 |
JP5133963B2 true JP5133963B2 (ja) | 2013-01-30 |
Family
ID=41733609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009252854A Expired - Fee Related JP5133963B2 (ja) | 2004-12-03 | 2009-11-04 | セラミック基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5133963B2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170011735A (ko) * | 2015-07-24 | 2017-02-02 | 엘지이노텍 주식회사 | 발광소자 패키지 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5958342B2 (ja) * | 2010-10-27 | 2016-07-27 | 旭硝子株式会社 | 発光素子用基板および発光装置 |
DE102015208704A1 (de) * | 2015-05-11 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
CN112159253A (zh) * | 2020-09-26 | 2021-01-01 | 深圳市海里表面技术处理有限公司 | 5g通讯用电阻陶瓷镀银工艺及陶瓷片 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04152661A (ja) * | 1990-10-17 | 1992-05-26 | Hitachi Cable Ltd | Ic用リードフレーム |
JPH06334087A (ja) * | 1993-05-21 | 1994-12-02 | Hitachi Cable Ltd | 半導体装置用リードフレームの製造方法 |
JP2003347600A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | Led実装基板 |
JP2004228549A (ja) * | 2002-11-25 | 2004-08-12 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP3940124B2 (ja) * | 2003-01-16 | 2007-07-04 | 松下電器産業株式会社 | 装置 |
-
2009
- 2009-11-04 JP JP2009252854A patent/JP5133963B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170011735A (ko) * | 2015-07-24 | 2017-02-02 | 엘지이노텍 주식회사 | 발광소자 패키지 |
KR102413301B1 (ko) * | 2015-07-24 | 2022-06-27 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 |
Also Published As
Publication number | Publication date |
---|---|
JP2010028146A (ja) | 2010-02-04 |
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