JP5121103B2 - 半導体装置、半導体装置の作製方法及び電気器具 - Google Patents

半導体装置、半導体装置の作製方法及び電気器具 Download PDF

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Publication number
JP5121103B2
JP5121103B2 JP2001276341A JP2001276341A JP5121103B2 JP 5121103 B2 JP5121103 B2 JP 5121103B2 JP 2001276341 A JP2001276341 A JP 2001276341A JP 2001276341 A JP2001276341 A JP 2001276341A JP 5121103 B2 JP5121103 B2 JP 5121103B2
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substrate
thin film
film
insulating film
forming
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JP2002164354A (ja
JP2002164354A5 (enrdf_load_stackoverflow
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明 石川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001276341A 2000-09-14 2001-09-12 半導体装置、半導体装置の作製方法及び電気器具 Expired - Fee Related JP5121103B2 (ja)

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JP2001276341A JP5121103B2 (ja) 2000-09-14 2001-09-12 半導体装置、半導体装置の作製方法及び電気器具

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JP2000280902 2000-09-14
JP2000280864 2000-09-14
JP2000-280902 2000-09-14
JP2000-280864 2000-09-14
JP2000280864 2000-09-14
JP2000280902 2000-09-14
JP2001276341A JP5121103B2 (ja) 2000-09-14 2001-09-12 半導体装置、半導体装置の作製方法及び電気器具

Related Child Applications (1)

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JP2012121856A Division JP5648019B2 (ja) 2000-09-14 2012-05-29 表示装置の作製方法

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JP2002164354A JP2002164354A (ja) 2002-06-07
JP2002164354A5 JP2002164354A5 (enrdf_load_stackoverflow) 2008-08-21
JP5121103B2 true JP5121103B2 (ja) 2013-01-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046606A (ja) * 2000-09-14 2015-03-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200423261A (en) * 2002-11-20 2004-11-01 Reveo Inc Method of fabricating multi-layer devices on buried oxide layer substrates
JP4748943B2 (ja) * 2003-02-28 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4651924B2 (ja) * 2003-09-18 2011-03-16 シャープ株式会社 薄膜半導体装置および薄膜半導体装置の製造方法
JP2005303158A (ja) * 2004-04-15 2005-10-27 Nec Corp デバイスの形成方法
CN102496346B (zh) 2004-12-06 2015-05-13 株式会社半导体能源研究所 显示装置
JP5201791B2 (ja) * 2004-12-06 2013-06-05 株式会社半導体エネルギー研究所 表示装置及び電子機器
US7456104B2 (en) 2005-05-31 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7605056B2 (en) 2005-05-31 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including separation by physical force
JP5004503B2 (ja) * 2005-05-31 2012-08-22 株式会社半導体エネルギー研究所 半導体装置
KR101272097B1 (ko) * 2005-06-03 2013-06-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 집적회로 장치 및 그의 제조방법
JP5352045B2 (ja) * 2005-06-03 2013-11-27 株式会社半導体エネルギー研究所 集積回路装置の作製方法
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7727859B2 (en) 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
FR2906078B1 (fr) * 2006-09-19 2009-02-13 Commissariat Energie Atomique Procede de fabrication d'une structure micro-technologique mixte et une structure ainsi obtenue
KR101446226B1 (ko) 2006-11-27 2014-10-01 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조 방법
JP5216716B2 (ja) * 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
FR2996682B1 (fr) * 2012-10-10 2014-11-28 Commissariat Energie Atomique Procede ameliore d'interconnexion pour micro-imageur
US10083991B2 (en) 2015-12-28 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
KR102630641B1 (ko) 2018-01-25 2024-01-30 삼성디스플레이 주식회사 표시장치 및 그의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02154232A (ja) * 1988-12-06 1990-06-13 Nec Corp 液晶表示基板とその製造方法
JP4011695B2 (ja) * 1996-12-02 2007-11-21 株式会社東芝 マルチチップ半導体装置用チップおよびその形成方法
JP3868567B2 (ja) * 1997-01-18 2007-01-17 株式会社半導体エネルギー研究所 複合化回路の作製方法
JP4063944B2 (ja) * 1998-03-13 2008-03-19 独立行政法人科学技術振興機構 ３次元半導体集積回路装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046606A (ja) * 2000-09-14 2015-03-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

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