JP5118923B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5118923B2 JP5118923B2 JP2007235269A JP2007235269A JP5118923B2 JP 5118923 B2 JP5118923 B2 JP 5118923B2 JP 2007235269 A JP2007235269 A JP 2007235269A JP 2007235269 A JP2007235269 A JP 2007235269A JP 5118923 B2 JP5118923 B2 JP 5118923B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- sensor element
- support frame
- integrated circuit
- lower container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 96
- 239000010410 layer Substances 0.000 claims description 58
- 230000001133 acceleration Effects 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 14
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 229910000851 Alloy steel Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001111 Fine metal Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 238000005452 bending Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
- G01P1/023—Housings for acceleration measuring devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/075—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure the electronic processing unit being integrated into an element of the micromechanical structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
- G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007235269A JP5118923B2 (ja) | 2007-09-11 | 2007-09-11 | 半導体装置 |
| PCT/JP2008/065652 WO2009034863A1 (ja) | 2007-09-11 | 2008-09-01 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007235269A JP5118923B2 (ja) | 2007-09-11 | 2007-09-11 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009068893A JP2009068893A (ja) | 2009-04-02 |
| JP2009068893A5 JP2009068893A5 (https=) | 2010-10-14 |
| JP5118923B2 true JP5118923B2 (ja) | 2013-01-16 |
Family
ID=40451872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007235269A Expired - Fee Related JP5118923B2 (ja) | 2007-09-11 | 2007-09-11 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5118923B2 (https=) |
| WO (1) | WO2009034863A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101071915B1 (ko) | 2009-07-06 | 2011-10-11 | 주식회사 이노칩테크놀로지 | 가속도 센서 및 이의 제조 방법 |
| KR101132263B1 (ko) | 2010-01-08 | 2012-04-02 | 주식회사 이노칩테크놀로지 | 가속도 센싱 조립체와 그 제작 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2505987Y2 (ja) * | 1989-12-28 | 1996-08-07 | 株式会社ワコー | 加速度センサ |
| JP3478894B2 (ja) * | 1995-02-20 | 2003-12-15 | 株式会社東海理化電機製作所 | 表面型の加速度センサ |
| JPH08327657A (ja) * | 1995-06-01 | 1996-12-13 | Nikon Corp | 力学量センサ |
| JP2007035965A (ja) * | 2005-07-27 | 2007-02-08 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法、ならびにそれに使用される接着材料およびその製造方法 |
| JP3938202B1 (ja) * | 2006-03-28 | 2007-06-27 | 松下電工株式会社 | センサパッケージの製造方法 |
-
2007
- 2007-09-11 JP JP2007235269A patent/JP5118923B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-01 WO PCT/JP2008/065652 patent/WO2009034863A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009034863A1 (ja) | 2009-03-19 |
| JP2009068893A (ja) | 2009-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5486271B2 (ja) | 加速度センサ、及び加速度センサの製造方法 | |
| KR100985453B1 (ko) | 센서 장치 및 그 제조 방법 | |
| JP4670427B2 (ja) | 半導体センサおよびその製造方法 | |
| JP4754817B2 (ja) | 半導体加速度センサ | |
| JP6468167B2 (ja) | 力学量センサ | |
| JP6209270B2 (ja) | 加速度センサ | |
| JP2006170856A (ja) | 加速度センサ | |
| JP5118923B2 (ja) | 半導体装置 | |
| JP2005127750A (ja) | 半導体センサおよびその製造方法 | |
| JP4428210B2 (ja) | 物理量センサの実装構造 | |
| JP5167848B2 (ja) | 支持基板及びそれを用いた静電容量型力学量検出センサの製造方法 | |
| JP6464770B2 (ja) | 物理量センサおよびその製造方法 | |
| JP3938199B1 (ja) | ウェハレベルパッケージ構造体およびセンサ装置 | |
| CN101317262A (zh) | 传感器装置及其制造方法 | |
| JP3938205B1 (ja) | センサエレメント | |
| JP2008122304A (ja) | 静電容量式加速度センサ | |
| JP4466344B2 (ja) | 加速度センサ | |
| JP4706634B2 (ja) | 半導体センサおよびその製造方法 | |
| JP4665733B2 (ja) | センサエレメント | |
| JP5678535B2 (ja) | 力学量センサ及び力学量センサの製造方法 | |
| JP4000170B2 (ja) | チップサイズパッケージ | |
| JP5069410B2 (ja) | センサエレメント | |
| JP3938200B1 (ja) | センサ装置およびその製造方法 | |
| JP2016170100A (ja) | シリコン配線埋め込みガラス基板およびそれを用いたセンサ | |
| JP2007263767A (ja) | センサ装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100830 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100831 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120829 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120925 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121022 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5118923 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151026 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D03 |
|
| LAPS | Cancellation because of no payment of annual fees |