WO2009034863A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
WO2009034863A1
WO2009034863A1 PCT/JP2008/065652 JP2008065652W WO2009034863A1 WO 2009034863 A1 WO2009034863 A1 WO 2009034863A1 JP 2008065652 W JP2008065652 W JP 2008065652W WO 2009034863 A1 WO2009034863 A1 WO 2009034863A1
Authority
WO
WIPO (PCT)
Prior art keywords
section
sensor element
semiconductor device
frame section
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065652
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Takeshi Sunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of WO2009034863A1 publication Critical patent/WO2009034863A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00Details of instruments
    • G01P1/02Housings
    • G01P1/023Housings for acceleration measuring devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0228Inertial sensors
    • B81B2201/0235Accelerometers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/07Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/075Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure the electronic processing unit being integrated into an element of the micromechanical structure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
PCT/JP2008/065652 2007-09-11 2008-09-01 半導体装置 Ceased WO2009034863A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007235269A JP5118923B2 (ja) 2007-09-11 2007-09-11 半導体装置
JP2007-235269 2007-09-11

Publications (1)

Publication Number Publication Date
WO2009034863A1 true WO2009034863A1 (ja) 2009-03-19

Family

ID=40451872

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065652 Ceased WO2009034863A1 (ja) 2007-09-11 2008-09-01 半導体装置

Country Status (2)

Country Link
JP (1) JP5118923B2 (https=)
WO (1) WO2009034863A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101071915B1 (ko) 2009-07-06 2011-10-11 주식회사 이노칩테크놀로지 가속도 센서 및 이의 제조 방법
KR101132263B1 (ko) 2010-01-08 2012-04-02 주식회사 이노칩테크놀로지 가속도 센싱 조립체와 그 제작 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228016A (ja) * 1995-02-20 1996-09-03 Tokai Rika Co Ltd 表面型の加速度センサ及びその製造方法
JP3938202B1 (ja) * 2006-03-28 2007-06-27 松下電工株式会社 センサパッケージの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2505987Y2 (ja) * 1989-12-28 1996-08-07 株式会社ワコー 加速度センサ
JPH08327657A (ja) * 1995-06-01 1996-12-13 Nikon Corp 力学量センサ
JP2007035965A (ja) * 2005-07-27 2007-02-08 Oki Electric Ind Co Ltd 半導体装置およびその製造方法、ならびにそれに使用される接着材料およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228016A (ja) * 1995-02-20 1996-09-03 Tokai Rika Co Ltd 表面型の加速度センサ及びその製造方法
JP3938202B1 (ja) * 2006-03-28 2007-06-27 松下電工株式会社 センサパッケージの製造方法

Also Published As

Publication number Publication date
JP5118923B2 (ja) 2013-01-16
JP2009068893A (ja) 2009-04-02

Similar Documents

Publication Publication Date Title
TW200739829A (en) Semiconductor device
USD593168S1 (en) Push up exercise device
EP2096448A3 (en) Process for manufacturing a pressure-monitoring device provided with a triaxial piezoresistive accelerometer
WO2006101768A3 (en) Method for fabricating a wafer level package having through wafer vias for external package connectivity and related structure
TWI315569B (en) Wafer level package including a device wafer integrated with a passive component
WO2008076172A3 (en) Proof-mass with supporting structure on integrated circuit-mems platform and method of fabricating the same
SG148130A1 (en) Cmos image sensor chip scale package with die receiving through-hole and method of the same
SG113596A1 (en) Semiconductor package with passive device integration
WO2007055924A3 (en) Wafer level packaging process
WO2007010361A8 (en) A mems package using flexible substrates, and method thereof
EP1927575A3 (en) Semiconductor device carrying a micro electro mechanical system
WO2009072757A3 (en) Slim led package
SG144128A1 (en) Semiconductor image device package with die receiving through-hole and method of the same
EP2258654A3 (en) Arrangement of several MEMS sensors
EP2154714A3 (en) Temperature sensor with buffer layer
WO2009114392A3 (en) Semiconductor die package including embedded flip chip
SG146570A1 (en) Image sensor module having build-in package cavity and the method of the same
TW200519004A (en) Thin-plate supporting container
EP1741668A3 (en) Method for encasing a MEMS device and packaged device
EP2270455A3 (en) Force sensor apparatus
SG168516A1 (en) Packaging system with hollow package
EP2387082A3 (en) LED platform having a LED chip on a membrane
WO2010012548A3 (de) Verkapselung, mems sowie verfahren zum selektiven verkapseln
SG118322A1 (en) Chip scale package with open substrate
WO2009045161A3 (en) Package for a dispensing device, comprising a pouch.

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08830330

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08830330

Country of ref document: EP

Kind code of ref document: A1