JP5116330B2 - 電解加工ユニット装置及び電解加工洗浄乾燥方法 - Google Patents

電解加工ユニット装置及び電解加工洗浄乾燥方法 Download PDF

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Publication number
JP5116330B2
JP5116330B2 JP2007079961A JP2007079961A JP5116330B2 JP 5116330 B2 JP5116330 B2 JP 5116330B2 JP 2007079961 A JP2007079961 A JP 2007079961A JP 2007079961 A JP2007079961 A JP 2007079961A JP 5116330 B2 JP5116330 B2 JP 5116330B2
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JP
Japan
Prior art keywords
wafer
cleaning
electrolytic
processing
electrolytic processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007079961A
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English (en)
Japanese (ja)
Other versions
JP2008240037A (ja
Inventor
隆 藤田
橋司 渡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP2007079961A priority Critical patent/JP5116330B2/ja
Priority to TW096144670A priority patent/TW200847257A/zh
Priority to DE102007057297A priority patent/DE102007057297A1/de
Priority to US12/004,562 priority patent/US20080237066A1/en
Priority to KR1020080007559A priority patent/KR20080087648A/ko
Publication of JP2008240037A publication Critical patent/JP2008240037A/ja
Application granted granted Critical
Publication of JP5116330B2 publication Critical patent/JP5116330B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP2007079961A 2007-03-26 2007-03-26 電解加工ユニット装置及び電解加工洗浄乾燥方法 Expired - Fee Related JP5116330B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007079961A JP5116330B2 (ja) 2007-03-26 2007-03-26 電解加工ユニット装置及び電解加工洗浄乾燥方法
TW096144670A TW200847257A (en) 2007-03-26 2007-11-26 Electrolytic processing unit device, and method for electrolytic processing, washing, and drying
DE102007057297A DE102007057297A1 (de) 2007-03-26 2007-11-28 Elektrolytische Aufbereitungsvorrichtung und Verfahren zur elektrolytischen Aufbereitung, zum Waschen und Trocknen
US12/004,562 US20080237066A1 (en) 2007-03-26 2007-12-21 Electrolytic processing unit device, and method for electrolytic processing, washing, and drying
KR1020080007559A KR20080087648A (ko) 2007-03-26 2008-01-24 전해 가공 유닛 장치 및 전해 가공 세정 건조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007079961A JP5116330B2 (ja) 2007-03-26 2007-03-26 電解加工ユニット装置及び電解加工洗浄乾燥方法

Publications (2)

Publication Number Publication Date
JP2008240037A JP2008240037A (ja) 2008-10-09
JP5116330B2 true JP5116330B2 (ja) 2013-01-09

Family

ID=39719662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007079961A Expired - Fee Related JP5116330B2 (ja) 2007-03-26 2007-03-26 電解加工ユニット装置及び電解加工洗浄乾燥方法

Country Status (5)

Country Link
US (1) US20080237066A1 (de)
JP (1) JP5116330B2 (de)
KR (1) KR20080087648A (de)
DE (1) DE102007057297A1 (de)
TW (1) TW200847257A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102265390B (zh) * 2008-12-25 2014-10-15 株式会社爱发科 静电卡盘用卡板的制造方法
JP5565422B2 (ja) * 2012-02-08 2014-08-06 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US20140007905A1 (en) * 2012-07-09 2014-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer cleaning system and method using electrolytic gas for back-end purge
JP6499563B2 (ja) * 2015-11-06 2019-04-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置のスケジュール作成方法及びそのプログラム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093761A (ja) 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
JP2002178236A (ja) 2000-12-15 2002-06-25 Howa Mach Ltd 工作機械
JP2002212786A (ja) * 2001-01-17 2002-07-31 Ebara Corp 基板処理装置
JP2004063817A (ja) * 2002-07-30 2004-02-26 Nec Kansai Ltd Ｃｍｐ装置
JP4233376B2 (ja) * 2002-12-27 2009-03-04 株式会社荏原製作所 基板処理方法
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US20060135045A1 (en) 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
JP4582409B2 (ja) * 2005-02-23 2010-11-17 株式会社東京精密 電解加工装置及び加工方法

Also Published As

Publication number Publication date
DE102007057297A1 (de) 2008-10-02
US20080237066A1 (en) 2008-10-02
JP2008240037A (ja) 2008-10-09
KR20080087648A (ko) 2008-10-01
TW200847257A (en) 2008-12-01

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