CN102265390B - 静电卡盘用卡板的制造方法 - Google Patents
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Abstract
提供一种静电卡盘用卡板的制造方法,具有从开始使用时使作为待处理基板的晶片W不易发生脱离不良的高生产效率。是覆盖具有电极(3a、3b)的卡盘主体(1)的表面的、用在静电卡盘(ES)上的由介电体制成的卡板(2)的制造方法,包括:将原料粉末压缩成指定形状后,烧结得到烧结体的工序;通过研磨加工,将烧结体中与应吸附基板接触的表面加工到指定的表面粗糙度及平坦度的工序;选择性地仅去除伴随研磨加工产生的准备脱出的粒子的喷砂处理的工序。
Description
技术领域
本发明涉及一种吸附固定硅晶片等待处理基板的静电卡盘上使用的作为介电体的卡板的制造方法。
背景技术
为了在半导体制造工序中得到想要的设备构造,会进行离子注入处理或刻蚀处理、使用PVD法、CVD法等的成膜处理等处理,在进行这些处理的真空处理装置中,安装有所谓的静电卡盘,以将硅晶片(下称“晶片”)固定在处于真空气氛的处理室内。以往的静电卡盘,举例说来,从专利文献1可知,是在埋设有正负电极的卡盘主体的上面处,安装作为介电体的卡板构成的所谓双极型的静电卡盘。
再有,众所周知,根据真空处理装置内进行的处理,有时要将基板控制在指定温度,这种情况下,比如在卡盘主体等内安装电阻加热式加热设备的同时,形成与晶片的背面(进行指定处理的面的相对侧)的外周边缘部面接触的挡边部,在该挡边部围绕出的内部空间内,例如垂直设立多个同心的支持部,构成卡板。而且,在晶片加热、冷却时,通过卡盘主体内形成的气体通道,向上述内部空间供给Ar气等非活性气体,在由挡边部与晶片背面组成的内部空间中形成非活性气体气氛,以此来加速对从卡盘主体到晶片的热传导,从而可以高效地进行晶片的加热、冷却。
此处,使用氮化铝或氮化硅等显示出高电阻的烧结体作为静电卡盘用的卡板,但若采用上述那样形成非活性气体气氛的构造,就不得不减小与晶片的接触面积。因此,为了切实吸附住晶片,又不引起电极上应施加的电压的增加,就需要将卡板的与晶片接触的面,即挡边部或突起部的上面加工到指定的表面粗糙度及平坦度。
由此,举例来说,从专利文献2可知:将烧结体浸入蜡中,对其表面进行平面研磨、抛光研磨或化学机械抛光(CMP)后,将蜡去除,加工到指定的表面粗糙度及平坦度(平行度)。
然而,如像上述那样,使用烧结体表面经平面研磨或抛光研磨制成的卡板,则在其开始使用时,会发生即便停止向电极施加电压,晶片受残留电荷的影响也无法脱离的情况。这样的问题虽然可通过使用伪基板,使其数百次的反复吸附、脱离于卡板来解决(即,能够很好地实施晶片的脱离,不受残留电荷的影响),但这种方法在使静电卡盘发挥功效时很费事,且存在增加制作工序的问题。
为此,本发明的发明者们反复切实研究,以由氮化铝烧结体构成的卡板为例,来说明卡板开始使用时无法脱离的问题,可以得知:烧结体表面因平面研磨或抛光研磨而受到损伤,其表面局部存在准备脱出的氮化铝粒子,这些氮化铝粒子变为电悬浮状态,在停止向电极施加电压时,就变为电阻,故而无法释放出残留的电荷,所以才会出现上述问题。
现有技术文献
专利文献
专利文献1:专利公开平1-321136号公报
专利文献2:专利公开2000-21963号公报
发明内容
发明要解决的技术问题
鉴于以上内容,本发明要提供的是一种静电卡盘用卡板的制造方法,该方法具有从开始使用时基板就不易发生脱离不良的高生产效率。
解决技术问题的手段
为解决上述问题,本发明是一种静电卡盘用卡板的制造方法,所述静电卡盘包括具有电极的卡盘主体,和覆盖卡盘主体表面的由介电体构成的卡板;所述方法包括下述步骤:
将原料粉末压缩成指定形状后,烧结得到烧结体的工序;
通过研磨加工,将所述烧结体中与待吸附基板接触的表面加工到指定的表面粗糙度及平坦度的工序;
选择性地仅去除伴随所述随研磨加工产生的准备脱出的粒子的喷砂处理的工序。
采用本发明,通过在研磨加工后进行喷砂处理,选择性地仅去除伴随研磨加工在所述表面产生的准备脱出的粒子。为此,将这样的卡板组装在卡盘主体上,构成静电卡盘来使用,从最初使用开始,作为待处理基板使用的晶片可以很好地脱离,不会在停止向电极施加电压时受到残留电荷的影响。并且,本发明中,在研磨加工后进行喷砂处理,与数百次地反复将基板吸附、脱离于卡板的现有方法比,操作简单,能提高生产效率,并且使用所述喷砂处理,几乎不会降低卡板表面的表面粗糙度或平坦度,不减少与晶片的接触面积。
再有,在本发明中,所述喷砂处理优选使用湿喷砂处理。
附图说明
图1是说明组装有用本实施方式的制造方法制造的卡板的静电卡盘的剖面示意图;
图2是将本实施方式的卡板的一部分放大来说明其制作工序的图。
具体实施方式
下面参照附图来说明具有用本发明实施方式的制造方法制造出的卡板的静电卡盘EC,其中,所述本发明实施方式的制造方法为:设待处理基板为晶片W,在实施离子注入处理、刻蚀处理或采用PVD法、CVD法的成膜处理等处理的真空处理装置中,从其开始使用时起就保持住晶片W在真空处理装置内,并在处理后晶片W可切实脱离的卡板。
如图1所示,静电卡盘EC由安装在未图示的处理室内底部的卡盘主体1和设置在该卡盘主体1的上面处的卡板2构成,卡板2是介电体。卡盘主体1,例如是氮化铝材质的,且在卡盘主体1的上部,经过未图示的绝缘层,装入有正负电极3a、3b,可以通过公知的卡盘电源E施加直流电压。
并且,在卡盘主体1上,形成有贯通上下的气体通道4,该气体通道4的下端经中间设有流量控制器5的气管6,与装有非活性气体的气源7相连通,这些部件共同构成本实施方式的气体供给设备。进一步地,卡盘主体1中内置有具有公知结构的电阻加热式加热器8,能将晶片W加热并保持在指定的温度上。
卡板2、例如由氮化铝烧结体构成,其包括可与晶片W背面的外周边缘部面接触的环状挡边部2a和在挡边部2a所围绕的内部空间2b内垂直设立的多个同心的棒状支持部2c。这种情况下,设定支持部2c的高略微小于挡边部2a的高,将晶片W吸附在卡板2表面上时,由各支持部2c来支撑晶片W。
而且,将晶片W搭载在卡板2上后,晶片W被两电极3a、3b之间施加直流电压而产生的静电力吸附在卡板2表面。此时,通过晶片W背面的外周边缘部与挡边部2a的整个周边的面接触,将内部空间2b大致密封。这一状态下,如经气体供给设备供给Ar气,则可在上述内部空间2b中形成气体气氛。由此,启动加热器8加热晶片W时,通过在由挡边部2a和晶片W背面构成的内部空间2b中形成非活性气体气氛,可加速对晶片W的热传递,高效加热晶片W。且本实施方式中,以仅安装了加热器8的设备为例进行了说明,但并不仅限于此,也可通过安装上公知的冷却设备构成。
接下来,说明氮化铝烧结体卡板2的制造方法。首先,用还原氮化法等公知方法得到用作原料粉末的氮化铝粉末。接着,向氮化铝粉末中适当添加能提高成形性的有机粘结剂或烧结助剂后,使用公知的成型机将原料粉末加工成形,制成具有上述形状的成形体。而且,将如此得到的成形体放在公知的烧结炉中,在2000℃的非活性气体气氛下烧结,得到具有想要的体积电阻率的氮化铝烧结体。再有,制作氮化铝烧结体时,可以使用所谓的热压烧结法。
接下来,如图2所示,通过研磨加工,将如此得到的氮化铝烧结体S的表面中与晶片W的接触面,加工为指定表面粗糙度及平坦度(平行度)。研磨加工可采用使用金刚石磨石的平面研磨、使用游离磨粒的抛光加工或化学机械抛光(CMP),加工到指定的表面粗糙度(Ra:0.1μm以下)及平坦度(0.005以下)。
此处,参照图2,在上述氮化铝烧结体S上,研磨加工时其表面会受到损伤,准备脱出的氮化铝粒子g为局部存在的状态(参照图2(a))。像这样准备脱出的氮化铝粒子g在与晶片W的接触面上存在的话,该氮化铝粒子g会变为电性悬浮的状态(参照图2(b)),在停止向电极3a、3b施加电压时变成电阻,无法释放残留的电荷(图2中,用箭头示出了电荷的流动)。因此,在开始使用卡板2时,尤其多易发生晶片脱离不良的问题。
因此,本实施形态中,进行了喷砂处理,来选择性地仅去除存在于氮化铝烧结体S即卡板2的与晶片W的接触面上的准备脱出的氮化铝粒子(参考2(c))。这样的喷砂处理优选所谓的湿喷砂,该所谓的湿喷砂是指向对象物,即卡板2同时喷射空气和混合有磨粒的水,研磨对象物的表面。
湿喷砂中使用的磨粒是氧化铝材质,采用粒径在烧结后氧化铝平均粒径以下的范围内的磨粒,以指定的重量比混合于水中。并且,喷砂处理时的优选水压在0.01~0.05Mpa范围内,压缩空气的压力在0.1~0.3Mpa范围内设定。水压或空气压低于上述范围的话,就出现粒子间粘着强度降低的粒子无法去除的问题。另一方面,水压或空气压高于上述范围的话,就会出现在表面粗糙度恶化的同时,粒子间粘着强度降低的粒子无法去除的问题。
通过像这样在研磨加工后再进行湿喷砂处理,选择性地仅去除伴随研磨加工在表面产生的准备脱出的粒子g。因此,将本实施方式的制造方法制作出的卡板2安装在上述卡盘主体1,作为静电卡盘EC来使用时,从开始便通过卡盘电源E向正负电极3a、3b施加电压,以指定的吸附力来吸附住晶片W后,停止施加该电压时,不受残留电荷影响,可使晶片W很好地脱离(参考図2(d))。并且,虽然研磨加工后进行喷砂处理,但与数百次重复地使晶片W吸附、脱离于卡板2的现有技术相比,操作简单,提高了生产效率,而且,上述喷砂处理中,卡板2表面的表面粗糙度或平坦度几乎不会恶化,不用减少与晶片W接触的面积。
为示出以上效果,用公知的方法制作了具有上述已说明的方式的氮化铝烧结体。而且,对与晶片W的接触面进行镜面加工,表面粗糙度为0.1μm。此后,实施湿喷砂处理。
接下来,将卡板2安装在卡盘主体1上构成静电卡盘EC,将晶片W安装在台架上,该台架上包括多个公知的、设置在静电卡盘1正上方用于抬起晶片W的升降机。在卡板2上搭载晶片W,之后通过卡盘电源E,以0~1000V范围内的电压来吸附晶片。之后停止从卡盘电源E施加的电压,运转升降机,可以确认不会发生任何脱离不良,能够通过升降机来抬起晶片W。
以上,是对本实施方式的说明,但本发明并不仅限于上述构成。例如,本发明还适用卡板由氮化硅烧结体等的其他材料构成的情况。并且,虽然以使用湿喷砂处理的情况为例做了说明,但只要能以简单的方法选择性地仅去除准备脱出的粒子,也可以适用其他喷砂方法。
附图标记说明
EC 静电卡盘
1 卡盘主体
2 卡板(氮化铝烧结体S)
2a 挡边部
2b 内部空间
2c 支持部
3a、3b 电极
g 准备脱出的AlN粒子
W 晶片
Claims (1)
1.一种静电卡盘用卡板的制造方法,所述静电卡盘包括具有电极的卡盘主体,和覆盖卡盘主体表面的由介电体构成的卡板;所述方法包括下述步骤:
将原料粉末压缩成指定形状后,烧结得到烧结体的工序;
通过研磨加工,将所述烧结体中与待吸附基板接触的表面加工到指定的表面粗糙度及平坦度的工序;
选择性地仅去除伴随研磨加工产生的准备脱出的粒子的喷砂处理的工序,所述喷砂处理为湿喷砂,所述湿喷砂中使用的磨粒的粒径为在所述烧结体的平均粒径以下,在所述湿喷砂中喷出的水压为0.01~0.05Mpa,压缩空气的压力为0.1~0.3MPa。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2008329612 | 2008-12-25 | ||
JP2008-329612 | 2008-12-25 | ||
PCT/JP2009/006731 WO2010073514A1 (ja) | 2008-12-25 | 2009-12-09 | 静電チャック用のチャックプレートの製造方法 |
Publications (2)
Publication Number | Publication Date |
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CN102265390A CN102265390A (zh) | 2011-11-30 |
CN102265390B true CN102265390B (zh) | 2014-10-15 |
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CN200980151941.2A Active CN102265390B (zh) | 2008-12-25 | 2009-12-09 | 静电卡盘用卡板的制造方法 |
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Country | Link |
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US (1) | US20110256810A1 (zh) |
JP (1) | JP5188584B2 (zh) |
KR (1) | KR101316804B1 (zh) |
CN (1) | CN102265390B (zh) |
DE (1) | DE112009003808T5 (zh) |
RU (1) | RU2486631C2 (zh) |
SG (1) | SG171819A1 (zh) |
TW (1) | TWI455791B (zh) |
WO (1) | WO2010073514A1 (zh) |
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AT521222B1 (de) * | 2018-05-07 | 2020-04-15 | Engel Austria Gmbh | Vorrichtung zum Handhaben und lokalen Fixieren |
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2009
- 2009-12-09 SG SG2011037892A patent/SG171819A1/en unknown
- 2009-12-09 KR KR1020117013611A patent/KR101316804B1/ko active IP Right Grant
- 2009-12-09 WO PCT/JP2009/006731 patent/WO2010073514A1/ja active Application Filing
- 2009-12-09 JP JP2010543796A patent/JP5188584B2/ja active Active
- 2009-12-09 DE DE112009003808T patent/DE112009003808T5/de not_active Ceased
- 2009-12-09 RU RU2011130815/28A patent/RU2486631C2/ru active
- 2009-12-09 US US13/130,595 patent/US20110256810A1/en not_active Abandoned
- 2009-12-09 CN CN200980151941.2A patent/CN102265390B/zh active Active
- 2009-12-23 TW TW098144477A patent/TWI455791B/zh active
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Also Published As
Publication number | Publication date |
---|---|
KR101316804B1 (ko) | 2013-10-11 |
CN102265390A (zh) | 2011-11-30 |
SG171819A1 (en) | 2011-07-28 |
RU2011130815A (ru) | 2013-01-27 |
WO2010073514A1 (ja) | 2010-07-01 |
RU2486631C2 (ru) | 2013-06-27 |
JP5188584B2 (ja) | 2013-04-24 |
US20110256810A1 (en) | 2011-10-20 |
DE112009003808T5 (de) | 2012-06-06 |
KR20110107796A (ko) | 2011-10-04 |
JPWO2010073514A1 (ja) | 2012-06-07 |
TW201032943A (en) | 2010-09-16 |
TWI455791B (zh) | 2014-10-11 |
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