TW201032943A - Method for manufacturing chuck plate for electrostatic chuck - Google Patents

Method for manufacturing chuck plate for electrostatic chuck Download PDF

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Publication number
TW201032943A
TW201032943A TW098144477A TW98144477A TW201032943A TW 201032943 A TW201032943 A TW 201032943A TW 098144477 A TW098144477 A TW 098144477A TW 98144477 A TW98144477 A TW 98144477A TW 201032943 A TW201032943 A TW 201032943A
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TW
Taiwan
Prior art keywords
chuck
wafer
plate
sintered body
manufacturing
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TW098144477A
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Chinese (zh)
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TWI455791B (en
Inventor
Takahiro Nanba
Naoki Morimoto
Kouji Sogabe
Masahiko Ishida
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Ulvac Inc
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Publication of TWI455791B publication Critical patent/TWI455791B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

A high productivity method for manufacturing a chuck plate for an electrostatic chuck, free of detachment defects in a substrate to be processed such as a wafer (W), from the very start of use. The method manufactures a chuck plate (2) for an electrostatic chuck (ES) composed of a dielectric material covering the surface of a chuck main body (1) having electrodes (3a, 3b), and includes: a step of molding a powdery raw material into a predetermined shape, then sintering the material to obtain a sintered body; a step of polishing the surface of the sintered body surface where the substrate to be chucked abuts, so that the surface has a predetermined surface roughness and planarity; and a step of blasting so as to selectively remove only the particles close to being removed from the surface due to polishing.

Description

201032943 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於將矽晶圓等之應處理的基板作吸著 保持之靜電吸盤用的身爲介電質之吸盤平板之製造方法。 【先前技術】 在半導體製造工程中，爲了得到所期望之裝置構造， φ 係進行有PVD法、CVD法等所致之成膜處理、離子注入 處理或是蝕刻處理等之處理，在進行此些之處理的真空處 理裝置中，爲了在真空氛圍中之處理室處，而將矽晶圓（ 以下，稱爲「晶圓」）作定位並保持，而被設置有所謂的 靜電吸盤。於先前技術中，作爲靜電吸盤，例如在專利文 獻1中，係週知有：在埋設有正負之電極的吸盤本體上面 ，將身爲介電質之吸盤平板作裝著所成的所謂雙極型者。 又，依存於在真空處理裝置內所進行之處理，會有將 〇 基板控制在特定溫度的情況，於此種情況中，係在吸盤本 體等處組入例如電阻加熱式之加熱手段，並且，形成與晶 圓之背面（與被進行有特定之處理的面相反側之面）的外 週緣部作面接觸之肋部，並在被此肋部所包圍之內部空間 中，例如以同心狀而立起設置複數個的支持部，而構成吸 盤平板，此事，係爲週知。而，在晶圓之加熱、冷卻時， 係構成爲：經由形成於吸盤本體上之氣體通路，來將Ar 氣體等之惰性氣體供給至上述內部空間中，並在藉由肋部 與晶圓背面所區劃出之內部空間中，形成惰性氣體氛圍’ -5- 201032943 藉由此，來對於從吸盤本體所對於晶圓之熱傳導作輔助， 並能夠有效率地進行晶圓之加熱、冷卻。 於此，作爲靜電吸盤用之吸盤平板，係使用有氮化鋁 或是氮化矽等之展現有高電阻的燒結體，但是，在構成爲 如同上述一般之能夠形成惰性氣體氛圍的構成者中，係不 得不將其與晶圓間的接觸面積縮小。因此，爲了構成爲並 不導致應施加於電極處之電壓的增加，便能夠將晶圓確實 地作吸著，係有必要將吸盤平板之與晶圓間的接觸面（亦 @ 即是肋部或是突起部之上面）加工爲特定之表面粗度以及 平坦度。 因此，例如藉由專利文獻2，而週知有以下述之方式 來進行加工：將燒結體含浸於蠘中，並對於其之表面進行 平面硏削、擦拭硏磨或是化學機械性拋光（CMP )，而後 ，將孅除去，而使其成爲特定之表面粗度以及平坦度（平 行度）。 然而，若是使用如同上述一般之對於燒結體之表面作 @ 平面硏削或是摩擦硏磨所成的吸盤平板，則在其之使用初 始時，則會產生就算是停止對於電極之電壓施加，亦會受 到殘留電荷之影響而使晶圓無法脫離的狀況。此種問題， 若是使用假（dummy )基板來將在吸盤平板處之吸著、脫 離反覆進行數百次，則能夠解決（亦即是，能夠不受到殘 留電荷之影響而良好地進行晶圓之脫離），但是，如此一 來，一直到使該吸盤平板作爲靜電吸盤而起作用爲止，係 成爲需要繁雜的處理程序，並有著使製造工程增加的問題 -6 - 201032943 因此’本發明者們，係反覆努力進行硏究，而得到了 下述的知識：亦即是，在吸盤平板之使用開始的初始時而 晶圓無法脫離的問題，若是以吸盤平板爲由氮化鋁燒結體 所成的情況爲例來作說明，則係因爲下述之因素而產生： 由於平面硏削或是摩擦硏磨，燒結體表面係受到損傷，於 其之表面上’即將脫粒之氮化鋁粒子，係局部性地存在， Φ 而由於此些之氮化鋁粒子的電性地成爲浮動狀態一事，當 停止對於電極之電壓施加時，會成爲電阻，而使得殘留電 荷無法逃脫，並使得晶圓無法脫離。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開平1-321136號公報 〔專利文獻2〕日本特開2000-21963號公報 φ 【發明內容】 〔發明所欲解決之課題〕 本發明，係有鑑於上述之問題點，而以提供一種··從 使用開始之初始起，便難以產生基板之脫離不良之情況， 且生產性爲良好的靜電吸盤用之吸盤平板之製造方法一事 ，作爲課題。 〔用以解決課題之手段〕 爲了解決上述課題，本發明，係爲一種將具備有電極 201032943 之吸盤本體的表面作覆蓋之由介電質所成的靜電吸盤用之 吸盤平板的製造方法，其特徵爲，包含有：將原料粉末壓 縮成形爲特定之形狀，而後進行燒結並得到燒結體之工程 :和對於前述燒結體中之與應吸著的基板相抵接之表面， 藉由硏磨加工而形成爲特定之表面粗度以及平坦度之工程 ;和施加僅將伴隨著前述硏磨加工而在前述表面上所產生 之即將脫粒的粒子作選擇性除去的噴砂處理之工程。 若依據本發明，則藉由在硏磨加工後進行噴砂處理， @ 僅有伴隨著硏磨加工而在前述表面上所產生了的即將脫粒 之粒子，會被選擇性地除去。因此，在將此種吸盤平板組 裝於吸盤本體上並作爲靜電吸盤來使用的初始起，便不會 受到當將對於電極之電壓施加停止時的殘留電荷之影響， 並能夠使身爲應處理基板之晶圓良好地脫離。又，在本發 明中，雖然係在硏磨加工後進行噴砂處理，但是，相較於 將在吸盤平板處之基板的吸著、脫離反覆進行數百次的先 前技術，其作業係爲簡單，而能夠將生產性提升，並且’ @ 在上述噴砂處理中，吸盤平板表面之表面粗度或是平坦度 係幾乎不會劣化，而不會有造成其與晶圓間之接觸面積減 少的事態。 另外，在本發明中’作爲前述噴砂處理’係以使用濕 噴砂爲最合適。 【實施方式】 以下，參考圖面’針對將應處理之基板設爲晶圓W， -8 - 201032943 並在進行PVD法、CVD法等所致之成膜處 處理或是蝕刻處理等之處理的真空處理裝置 始初始起便將晶圓W作保持，並在處理後 晶圓W脫離之具備有藉由本發明之實施形 所製作了的吸盤平板之靜電吸盤EC作說明< 如圖1中所示一般，靜電吸盤EC，係 略圖示之處理室內的底部處之吸盤本體1、 ❹ 吸盤本體1之上面的身爲介電質之吸盤平板 盤本體1，例如係爲氮化鋁製，於其之上部 略圖示之絕緣層而被組入有正負之電極3a、 夠從週知之吸盤電源E來施加直流電壓。 又，在吸盤本體1處，係被形成有將上 之氣體通路4，此氣體通路4之下端，係經 有質量流控制器5之氣體管6而被與收容有 情性氣體的氣體源7相通連，而此些之構件 Φ 形態之氣體供給手段。進而，在吸盤本體1 有具備週知構造之電阻加熱式的加熱器8, 晶圓W加熱保持於特定之溫度。 吸盤平板2，例如係爲由氮化鋁燒結體 備有能夠和晶圓W背面之外週緣部作面接 部2a、和在被肋部2a所包圍之內部空間2b 置爲同心狀之複數個的棒狀之支持部2c。於 部2c之高度，係被設定爲較肋部2a之高度 當在吸盤平板2表面上而將晶圓W作吸著 理、離子注入 內，從使用開 能夠確實地使 態的製造方法 ► 由被配置在省 和被設置在此 2所構成。吸 ，係經介於省 3b，並成爲能 下方向作貫通 由被中介設置 ‘ Ar氣體等之 係構成本實施 處，係被內藏 並成爲能夠將 所構成，並具 觸之環狀的肋 內而被立起設 此情況，支持 而僅些許小， 時，係成爲藉 -9 · 201032943 由各支持部2c來將晶圓W作支持。 而，在將晶圓W載置於吸盤平板2處後，藉由在兩 電極3a、3b間施加直流電壓，而產生靜電力，並藉由此 靜電力來將晶圓W吸著在吸盤平板2之表面上。此時， 藉由使晶圓背面之外週緣部與肋部2a涵蓋其之全周地而 作面接觸’內部空間2b係被作略密閉。於此狀態下，若 是經由氣體供給手段而供給Ar氣體，則係能夠在內部空 間2b中形成氣體氛圍。藉由此，當使加熱器8動作並對 參 晶圓W作加熱的情況時，藉由在以肋部2a與晶圓W背面 所區劃出之內部空間2b中形成惰性氣體氛圍，能夠對於 熱之對晶圓W的傳導作輔助，並有效率地將晶圓w加熱 。另外，在本實施形態中，雖係將僅設置了加熱器8者爲 例而作說明，但是，係並不被限定於此，亦可組入週知之 冷卻手段而構成之。 接著，針對身爲氮化鋁燒結體之吸盤平板2的製造方 法作說明。首先，藉由還原氮化法等之週知的方法，來得 @ 到身爲原料粉末之氮化鋁粉末。接著，將使成形性提升之 週知的有機黏合劑或是燒結助劑適宜添加至氮化鋁粉末中 ，之後，使用週知之成形機來將原料粉末作成形，而製作 具備有上述之形狀的成形體。而後，將如此這般所得到的 成形體，藉由週知的燒結爐來在2000 °C之惰性氣體氛圍中 作燒成，並得到具備有所期望之體積電阻率的氮化鋁燒結 體。另外，當製作氮化鋁燒結體的情況時，係可使用所謂 的熱壓燒成法。 -10- 201032943 接著，如圖2中所示一般，將如此這般所得到了的氮 化鋁燒結體S的表面中之與晶圓W間的接觸面，藉由硏 磨加工而加工爲特定之表面粗度以及平坦度（平行度）。 作爲硏磨加工，係可列舉有：使用有鑽石砥石之平面硏削 ，使用有游離砥粒之摩擦加工，或者是化學機械性硏磨（ CMP )，並以使其成爲特定之表面粗度（Ra:0.1ym以下 )以及平坦度（0.005以下）的方式來作加工。 φ 於此，參考圖2，在上述之氮化鋁燒結體S中，於硏 磨加工時，其之表面係受到損傷，並成爲局部性地存在有 即將脫粒之氮化鋁粒子g的狀態（參考圖2 ( a ))。若是 此種即將脫粒之氮化鋁粒子g存在於與晶圓W間之接觸 面處，則該氮化鋁粒子g係電性地成爲浮游狀態（參考圖 2(b))，當停止了對於電極3a、3b之電壓施加時，其 係會成爲電阻，而無法使殘留電荷逃離（另外，圖2中， 係藉由箭頭來代表電荷之流動）。因此，特別是在吸盤平 # 板2之使用開始初始時，會有時常產生晶圓之脫離不良之 虞。 因此，在本實施形態中，係設爲施加有僅將存在於身 爲氮化鋁燒結體S之吸盤平板2的與晶圓W間之接觸面 處的即將脫粒之氮化鋁粒子g作選擇性除去的噴砂處理（ 參考圖2(c))。作爲此種噴砂處理，係以藉由將混合有 砥粒之水與空氣同時地吹附至對象物（亦即是吸盤平板2 )處而對於對象物之表面作硏磨的所謂濕噴砂爲最合適。 作爲在濕噴砂中所被使用之砥粒，係使用氧化鋁製、 -11 - 201032943 且其之粒徑爲被燒結了的氧化鋁之平均粒徑以下之範圍者 ，並以特定之重量比而被與水相混合。又，較理想，係將 噴砂處理時之水壓設定在〇.〇1〜0.05 MPa之範圍內，並將 壓縮空氣之壓力設定在0.1〜0.3 MPa之範圍內。若是水壓 或空氣壓爲較上述更低，則係無法將粒子間之接著強度降 低了的粒子除去，另一方面，若是水壓或空氣壓爲較上述 更高，則會使表面粗度惡化，並且，會產生無法將粒子間 之接著強度降低了的粒子除去的問題。 @ 藉由如此這般地而在硏磨加工後更進而進行濕噴砂處 理，僅有伴隨著硏磨加工而在表面上所產生了的即將脫粒 之粒子g會被選擇性地除去。因此，當將藉由本實施形態 之製造方法所製作了的吸盤平板2組裝於上述之吸盤本體 1處並作爲靜電吸盤EC來使用的情況時，從使用之初始 起，當經介於吸盤電源E而在正負之電極3a、3b處施加 電壓，並以特定之吸著力來將晶圓W作了吸著後，再將 該電壓之施加停止時，便不會受到殘留電荷之影響’而能 〇 夠使晶圓W良好地脫離（參考圖2(d))。又，雖然係 在硏磨加工後進行噴砂處理，但是，相較於將在吸盤平板 2處之晶圓W的吸著、脫離反覆進行數百次的先前技術’ 其作業係爲簡單，而能夠將生產性提升，並且’在上述噴 砂處理中，吸盤平板2表面之表面粗度或是平坦度係幾乎 不會劣化，而不會有造成其與晶圓W間之接觸面積減少 的事態。 爲了對於以上之效果作展示’而藉由週知的方法來製 -12- 201032943 作了具備有上述所說明了的形態之氮化鋁燒結體。而後， 對於其與晶圓w間之接觸面進行鏡面加工，並設爲了 "m之表面粗度。而後，實施了濕噴砂處理。 接著’將吸盤平板2組裝於吸盤本體1處並構成靜電 吸盤EC’並將其設置在具備有複數之將晶圓w舉升至靜 電吸盤1之正上方處的週知之舉升銷的平台處。在將晶圓 W載置於吸盤平板2上後’藉由吸盤電源e而以0〜 ❹ 1 000 V之範圍的電壓來將晶圓作了吸著。而後，若是將從 吸盤電源E而來之電壓施加停止，並使舉升機構動作，則 係能夠確認到：並沒有產生任何之脫離不良，而能夠藉由 舉升銷來將晶圓舉升。 以上’雖係針對本實施之形態而作了說明，但是，本 發明，係並非爲被限定於上述之構成者。例如，當藉由氮 化矽燒結體等之其他的材料而構成吸盤平板的情況時，亦 能夠適用本發明。又，雖係針對使用濕噴砂處理的情況而 Φ 作了說明’但是’只要是能夠僅將即將脫粒之粒子以簡單 的方法來選擇性地除去者，則就算是其他的噴砂方法，亦 可作適用。 【圖式簡單說明】 〔圖1〕對於將藉由本實施形態之製造方法所製作了 的吸盤平板作組裝所成之靜電吸盤作模式性說明的剖面圖 〇 〔圖2〕將本實施形態之吸盤平板的一部份作擴大並 -13- 201032943 對於其之製作工程作說明的圖。 【主要元件符號說明】 EC :靜電吸盤 1 :吸盤本體 2:吸盤平板（氮化鋁燒結體S) 2a :肋部 2b :內部空間 2 c ·支持部 3 a、3 b :電極 g :即將脫粒之A1N粒子 W :晶圓 -14-[Technical Field] The present invention relates to a method of manufacturing a chuck plate which is a dielectric material for an electrostatic chuck for absorbing and holding a substrate to be processed such as a tantalum wafer. [Prior Art] In the semiconductor manufacturing process, in order to obtain a desired device structure, φ is subjected to a film formation process, an ion implantation process, or an etching process by a PVD method, a CVD method, or the like, and is performed. In the vacuum processing apparatus for processing, a so-called electrostatic chuck is provided in order to position and hold a tantalum wafer (hereinafter referred to as "wafer") in a processing chamber in a vacuum atmosphere. In the prior art, as an electrostatic chuck, for example, Patent Document 1 discloses a so-called bipolar device in which a chuck plate having a dielectric material is mounted on a chuck body in which a positive and negative electrode is embedded. Type. Further, depending on the processing performed in the vacuum processing apparatus, the ruthenium substrate may be controlled to a specific temperature. In this case, for example, a resistance heating type heating means is incorporated in the chuck body or the like. Forming a rib that is in surface contact with the outer peripheral edge portion of the back surface of the wafer (the surface opposite to the surface on which the specific surface is processed), and in the internal space surrounded by the rib portion, for example, concentrically It is known that a plurality of support portions are provided to constitute a suction cup plate. In the heating and cooling of the wafer, an inert gas such as Ar gas is supplied into the internal space via a gas passage formed in the chuck body, and the rib and the back surface of the wafer are used. In the internal space defined in the area, an inert gas atmosphere '-5-201032943 is formed, thereby assisting the heat conduction from the chuck body to the wafer, and efficiently heating and cooling the wafer. Here, as the chuck plate for the electrostatic chuck, a sintered body exhibiting high electric resistance such as aluminum nitride or tantalum nitride is used, but in the constitution which is capable of forming an inert gas atmosphere as described above. The system has to reduce the contact area between it and the wafer. Therefore, in order to prevent the voltage applied to the electrode from increasing, the wafer can be reliably sucked, and it is necessary to make the contact surface between the chuck plate and the wafer (also @@ is the rib). Or the top of the protrusion) is machined to a specific surface roughness and flatness. Therefore, for example, Patent Document 2 is known to perform processing in which a sintered body is impregnated into a crucible, and the surface thereof is subjected to planar boring, wiping honing or chemical mechanical polishing (CMP). Then, the crucible is removed to make it a specific surface roughness and flatness (parallelism). However, if a suction cup plate which is formed by @planar boring or friction honing on the surface of the sintered body as described above is used, at the initial stage of use, even if the voltage application to the electrode is stopped, A situation in which the wafer cannot be detached due to residual charge. Such a problem can be solved by using a dummy substrate to suck and detach the suction plate at the suction plate for hundreds of times (that is, it is possible to perform the wafer well without being affected by the residual charge). In this way, until the suction cup plate functions as an electrostatic chuck, it becomes a complicated processing procedure, and there is a problem that the manufacturing process is increased. -6 - 201032943 Therefore, the present inventors Repeated efforts to carry out research, and obtained the following knowledge: that is, the problem that the wafer cannot be detached at the beginning of the use of the suction cup plate, if the suction plate is made of an aluminum nitride sintered body The case is explained by the following factors: It is caused by the following factors: The surface of the sintered body is damaged due to planar boring or friction honing, and the aluminum nitride particles to be threshed on the surface thereof are partially Sexually exists, Φ, and because the aluminum nitride particles of these materials are electrically floating, when the voltage application to the electrodes is stopped, it becomes a resistance, and Residual charge can not escape, and makes the wafers can not escape. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open No. Hei 1-321136 (Patent Document 2) Japanese Laid-Open Patent Publication No. 2000-21963 (Summary of the Invention) [Problems to be Solved by the Invention] The present invention In view of the above-mentioned problems, it is possible to provide a method for manufacturing a chuck plate for electrostatic chucks which is difficult to cause a problem of detachment of the substrate from the beginning of use, and which is excellent in productivity. Question. [Means for Solving the Problem] In order to solve the above problems, the present invention provides a method for manufacturing a chuck plate for an electrostatic chuck comprising a dielectric surface covered with a surface of a chuck body having an electrode 201032943, And characterized in that: the raw material powder is compression-molded into a specific shape, and then sintered to obtain a sintered body: and the surface abutting on the substrate to be sucked in the sintered body is honed A process of forming a specific surface roughness and flatness; and applying a sandblasting process for selectively removing only the particles to be threshed which are generated on the aforementioned surface accompanying the aforementioned honing process. According to the present invention, by performing the blasting treatment after the honing process, only the particles to be threshed which are generated on the surface accompanying the honing process are selectively removed. Therefore, when the suction cup plate is assembled on the chuck body and used as an electrostatic chuck, it is not affected by the residual charge when the voltage application to the electrode is stopped, and the substrate can be processed. The wafer is well detached. Further, in the present invention, although the blasting treatment is performed after the honing processing, the operation is simpler than the prior art in which the suction and detachment of the substrate at the suction cup flat plate are performed hundreds of times. In addition, in the above-described blasting treatment, the surface roughness or flatness of the surface of the suction cup plate hardly deteriorates, and there is no situation in which the contact area with the wafer is reduced. Further, in the present invention, it is most preferable to use wet blasting as the aforementioned blasting treatment. [Embodiment] Hereinafter, the substrate to be processed is referred to as a wafer W, -8 - 201032943, and a film formation process or an etching process by a PVD method, a CVD method, or the like is performed. The vacuum processing apparatus initially holds the wafer W, and after the processing, the wafer W is detached, and the electrostatic chuck EC having the chuck plate manufactured by the embodiment of the present invention is described as < Generally, the electrostatic chuck EC is a suction cup body 1 at the bottom of the processing chamber shown in the drawing, and the upper surface of the chuck body 1 is a dielectric chuck disk body 1, for example, made of aluminum nitride. A positively negative electrode 3a is incorporated in the upper portion of the insulating layer, and a DC voltage is applied from the known chuck power supply E. Further, at the chuck body 1, a gas passage 4 is formed, and the lower end of the gas passage 4 is connected to the gas source 7 containing the inert gas via the gas pipe 6 having the mass flow controller 5. And the gas supply means of the Φ form of the components. Further, the chuck body 1 has a resistance heating type heater 8 having a well-known structure, and the wafer W is heated and maintained at a specific temperature. The chuck plate 2 is made of, for example, a plurality of sintered aluminum nitride sintered bodies having a surface portion 2a which is different from the outer peripheral portion of the back surface of the wafer W, and a concentric portion 2b surrounded by the rib portion 2a. Rod-shaped support portion 2c. The height of the portion 2c is set to be higher than the height of the rib 2a. When the wafer W is adsorbed and ion-implanted on the surface of the chuck plate 2, the manufacturing method can be surely made from use. It is configured in the province and is set in this 2. The suction is carried out in the province 3b, and it is formed in the lower direction. The system is constructed by an intermediary such as 'Ar gas, etc., and is embedded and becomes a rib that can be formed and has a ring shape. The inside is set up to support the situation, and only a small amount is supported. In the case of the support unit 2c, the wafer W is supported by the support unit 2c. On the other hand, after the wafer W is placed on the chuck plate 2, an electrostatic force is generated by applying a DC voltage between the electrodes 3a and 3b, and the wafer W is sucked on the chuck plate by the electrostatic force. 2 on the surface. At this time, the outer peripheral portion of the wafer back surface and the rib portion 2a cover the entire circumference thereof, and the inner space 2b is slightly sealed. In this state, if Ar gas is supplied via the gas supply means, a gas atmosphere can be formed in the internal space 2b. Thereby, when the heater 8 is operated and the wafer W is heated, an inert gas atmosphere can be formed in the internal space 2b defined by the rib 2a and the back surface of the wafer W, so that heat can be applied to the heat. It assists in the conduction of the wafer W and efficiently heats the wafer w. In the present embodiment, the heater 8 is provided as an example. However, the present invention is not limited thereto, and a well-known cooling means may be incorporated. Next, a method of manufacturing the chuck plate 2 which is an aluminum nitride sintered body will be described. First, an aluminum nitride powder which is a raw material powder is obtained by a well-known method such as a reduction nitridation method. Then, a well-known organic binder or a sintering aid which improves the moldability is suitably added to the aluminum nitride powder, and then the raw material powder is molded by using a known molding machine to produce the shape having the above shape. Shaped body. Then, the molded body obtained in this manner is fired in an inert gas atmosphere at 2000 °C by a known sintering furnace to obtain an aluminum nitride sintered body having a desired volume resistivity. Further, in the case of producing an aluminum nitride sintered body, a so-called hot press baking method can be used. -10-201032943 Next, as shown in FIG. 2, the contact surface with the wafer W in the surface of the aluminum nitride sintered body S thus obtained is processed into a specific shape by honing processing. Surface roughness and flatness (parallelism). As the honing processing, there may be mentioned a plane boring using a diamond vermiculite, a friction processing using free granules, or a chemical mechanical honing (CMP), and making it a specific surface roughness ( Ra: 0.1 ym or less) and flatness (0.005 or less) for processing. With reference to Fig. 2, in the above-described aluminum nitride sintered body S, the surface of the aluminum nitride sintered body S is damaged during the honing process, and the state of the aluminum nitride particles g to be threshed is locally present ( Refer to Figure 2 (a)). When such an aluminum nitride particle g to be threshed is present at a contact surface with the wafer W, the aluminum nitride particle g is electrically floated (refer to FIG. 2(b)), and when it is stopped, When the voltages of the electrodes 3a and 3b are applied, they become resistances, and the residual charges cannot escape (in addition, in Fig. 2, the flow of electric charges is represented by arrows). Therefore, especially when the use of the suction cup #2 is started initially, there is a case where the wafer is not properly detached. Therefore, in the present embodiment, it is assumed that only the aluminum nitride particles g to be threshed which are present at the contact surface with the wafer W of the chuck plate 2 which is the aluminum nitride sintered body S are applied. Sandblasting for sexual removal (refer to Figure 2(c)). As such a blasting treatment, so-called wet blasting is performed on the surface of the object by blowing water and air mixed with granules to the object (that is, the suction cup plate 2) at the same time. Suitable. The granules used in the wet blasting are made of alumina, -11 - 201032943, and the particle size thereof is within the range of the average particle diameter of the sintered alumina, and is in a specific weight ratio. It is mixed with water. Further, preferably, the water pressure during the blasting treatment is set within a range of 〇.〇1 to 0.05 MPa, and the pressure of the compressed air is set within a range of 0.1 to 0.3 MPa. If the water pressure or the air pressure is lower than the above, the particles having reduced adhesion between the particles cannot be removed. On the other hand, if the water pressure or the air pressure is higher than the above, the surface roughness is deteriorated. Moreover, there is a problem that particles which cannot reduce the adhesion strength between particles are removed. @ By this, the wet blasting treatment is further performed after the honing process, and only the particles g to be threshed which are generated on the surface accompanying the honing process are selectively removed. Therefore, when the chuck plate 2 manufactured by the manufacturing method of the present embodiment is assembled to the above-described chuck body 1 and used as the electrostatic chuck EC, from the initial use, when the suction cup power supply E is passed When a voltage is applied to the positive and negative electrodes 3a and 3b, and the wafer W is sucked by a specific absorbing force, and the application of the voltage is stopped, the residual electric charge is not affected. The wafer W is sufficiently detached (refer to FIG. 2(d)). Further, although the blasting treatment is performed after the honing processing, the prior art in which the absorbing and detaching of the wafer W at the chucking plate 2 is performed hundreds of times is simple, and the operation is simple. The productivity is improved, and 'in the above-described blasting treatment, the surface roughness or flatness of the surface of the chucking plate 2 is hardly deteriorated, and there is no situation in which the contact area with the wafer W is reduced. In order to exhibit the above effects, a sintered aluminum nitride sintered body having the above-described configuration has been produced by a known method -12-201032943. Then, the contact surface between the wafer and the wafer w is mirror-finished and set to the surface roughness of "m. Then, wet blasting was carried out. Next, 'sucker plate 2 is assembled to the chuck body 1 and constitutes an electrostatic chuck EC' and is placed at a platform provided with a plurality of well-known lifting pins that lift the wafer w directly above the electrostatic chuck 1. . After the wafer W is placed on the chuck plate 2, the wafer is sucked by a voltage of 0 to ❹ 1 000 V by the chuck power supply e. Then, if the voltage application from the chuck power supply E is stopped and the lift mechanism is operated, it can be confirmed that the wafer is lifted by the lift pin without causing any detachment failure. The above description has been made on the form of the present embodiment, but the present invention is not limited to the above-described constituents. For example, the present invention can also be applied to a case where a suction cup flat plate is formed by using another material such as a niobium nitride sintered body. Further, although Φ has been described for the case of using the wet blasting treatment, "but it is possible to selectively remove only the particles to be threshed in a simple manner, even if it is another blasting method. Be applicable. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view schematically showing an electrostatic chuck in which a chuck plate manufactured by the manufacturing method of the present embodiment is assembled. FIG. 2 is a suction cup of the embodiment. A part of the slab is enlarged and -13 - 201032943 is a diagram illustrating the production of the slab. [Description of main component symbols] EC : Electrostatic chuck 1 : Suction cup body 2 : Suction cup plate (aluminum nitride sintered body S) 2a : Rib 2b : Internal space 2 c · Supporting part 3 a, 3 b : Electrode g : Degranulation A1N Particle W: Wafer-14-

Claims (1)

201032943 七、申請專利範圍： 1. 一種靜電吸盤用之吸盤平板的製造方法，係爲將具 備有電極之吸盤本體的表面作覆蓋之由介電質所成的靜電 吸盤用之吸盤平板之製造方法，其特徵爲，包含有： 將原料粉末壓縮成形爲特定之形狀，而後進行燒結並 得到燒結體之工程：和 對於前述燒結體中之與應吸著的基板相抵接之表面， φ 藉由硏磨加工而形成爲特定之表面粗度以及平坦度之工程 :和 施加僅將伴隨著前述硏磨加工而在前述表面上所產生 之即將脫粒的粒子作選擇性除去的噴砂處理之工程。 2. 如申請專利範圍第1項所記載之靜電吸盤用之吸盤 平板的製造方法’其中，前述噴砂處理，係爲濕噴砂。 ❹ -15-201032943 VII. Patent application scope: 1. A method for manufacturing a suction cup plate for an electrostatic chuck, which is a method for manufacturing a suction cup plate for electrostatic chucks made of a dielectric material covering a surface of a chuck body having electrodes And characterized in that: the raw material powder is compression-molded into a specific shape, and then sintered to obtain a sintered body: and a surface abutting on the substrate to be sucked in the sintered body, φ by 硏A process of forming a specific surface roughness and flatness by grinding: and applying a blasting treatment for selectively removing only the particles to be threshed which are generated on the surface by the honing process. 2. The method for producing a suction cup for an electrostatic chuck according to the first aspect of the invention, wherein the blasting treatment is wet blasting. ❹ -15-
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