KR20110107796A - Method for manufacturing chuck plate for electrostatic chuck - Google Patents

Method for manufacturing chuck plate for electrostatic chuck Download PDF

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KR20110107796A
KR20110107796A KR1020117013611A KR20117013611A KR20110107796A KR 20110107796 A KR20110107796 A KR 20110107796A KR 1020117013611 A KR1020117013611 A KR 1020117013611A KR 20117013611 A KR20117013611 A KR 20117013611A KR 20110107796 A KR20110107796 A KR 20110107796A
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chuck
wafer
chuck plate
manufacturing
polishing
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KR1020117013611A
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KR101316804B1 (en
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타카히로 난바
나오키 모리모토
코지 소가베
마사히코 이시다
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가부시키가이샤 알박
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

사용 개시 당초로부터, 처리해야할 기판인 웨이퍼(W)의 이탈 불량이 발생하기 어렵고 생산성이 좋은 정전척용의 척 플레이트의 제조방법을 제공한다. 전극(3a, 3b)을 가지는 척 본체(1)의 표면을 덮는 유전체로 된 정전척(ES)용의 척 플레이트(2)의 제조 방법으로, 원료 분말을 소정 형상으로 압축 성형한 후, 소결하여 소결체를 얻는 공정과, 소결체 중, 흡착해야 할 기판이 접하는 표면을 연마 가공에 의해 소정의 표면 거칠기 및 평탄도로 형성하는 공정과, 연마가공에 수반하여 상기 표면에 생긴 분리되기 시작하고 있는 입자만을 선택적으로 제거하는 블라스트 처리를 실시하는 공정을 포함한다.Provided is a method for producing a chuck plate for an electrostatic chuck which is hard to occur from the beginning of the use and that the defect of detachment of the wafer W, which is a substrate to be processed, is difficult to produce. In the manufacturing method of the chuck plate 2 for the electrostatic chuck (ES) made of a dielectric covering the surface of the chuck main body 1 having the electrodes (3a, 3b), the raw powder is compression molded into a predetermined shape, and then sintered A step of obtaining a sintered body, a step of forming a surface of the sintered body in contact with a substrate to be adsorbed by a polishing process with a predetermined surface roughness and flatness, and only particles starting to be separated on the surface with polishing It includes a step of performing a blast treatment to remove the.

Description

정전척용의 척 플레이트의 제조 방법{METHOD FOR MANUFACTURING CHUCK PLATE FOR ELECTROSTATIC CHUCK}Manufacturing method of chuck plate for electrostatic chuck {METHOD FOR MANUFACTURING CHUCK PLATE FOR ELECTROSTATIC CHUCK}

본 발명은, 실리콘 웨이퍼 등의 처리해야 할 기판을 흡착 유지하는 정전척용의 유전체인 척 플레이트의 제조 방법에 관한 것이다.TECHNICAL FIELD This invention relates to the manufacturing method of the chuck plate which is a dielectric for electrostatic chucks which hold | maintain and hold | maintain the board | substrate to be processed, such as a silicon wafer.

반도체 제조 공정에 있어서 소망하는 디바이스 구조를 얻기 위해서 PVD법, CVD법 등에 의한 막 형성 처리, 이온 주입 처리나 에칭 처리 등의 처리가 행해지고, 이러한 처리를 실시하는 진공 처리 장치에서는, 진공 분위기 중의 처리실에서 실리콘 웨이퍼(이하, 「웨이퍼」라고 한다)를 위치 결정해 유지하기 위해서 소위 정전척이 설치되어 있다. 종래, 정전척으로서는, 양과 음의 전극을 매설한 척 본체 표면에 유전체인 척 플레이트를 장착하여 구성된 소위 쌍극형의 것이 예를 들면 특허 문헌 1에 알려져 있다.In order to obtain a desired device structure in a semiconductor manufacturing process, processes such as a film forming process, an ion implantation process, and an etching process by the PVD method, the CVD method, and the like are performed. In a vacuum processing apparatus which performs such a process, a process chamber in a vacuum atmosphere is used. In order to position and hold a silicon wafer (hereinafter referred to as "wafer"), a so-called electrostatic chuck is provided. Conventionally, the so-called bipolar type | mold comprised by attaching the chuck plate which is a dielectric on the surface of the chuck main body which embedded the positive and negative electrode is known by patent document 1, for example.

또, 진공 처리 장치 내에서 행해지는 처리에 따라서는, 기판을 소정 온도로 제어하는 경우가 있고, 이러한 경우에는, 척 본체 등에 예를 들면 저항 가열식의 가열 수단을 조립함과 아울러, 웨이퍼의 이면(소정의 처리가 행해지는 면과 반대측)의 외주연부와 면접촉하는 리브부(rib portion)를 형성하고, 이 리브부로 둘러싸인 내부 공간에 예를 들면 동심 모양으로 복수개의 지지부를 세워 설치하여 척 플레이트를 구성하는 것이 알려져 있다. 그리고 웨이퍼의 가열, 냉각시에는, 상기 내부 공간에 척 본체에 형성한 가스 통로를 개입시켜 Ar 가스 등의 불활성 가스를 공급하고, 리브부와 웨이퍼 이면으로 정의되는 내부 공간에 불활성 가스 분위기를 형성하는 것에 의해, 척 본체로부터 웨이퍼에의 열전달을 도와 효율적으로 웨이퍼를 가열, 냉각할 수 있도록 하고 있다.Moreover, depending on the process performed in a vacuum processing apparatus, a board | substrate may be controlled to predetermined temperature, In such a case, while a resistance heating type heating means is assembled to a chuck main body etc., for example, the back surface of a wafer ( A rib portion is formed in surface contact with the outer circumferential portion on the side opposite to the surface on which the predetermined processing is performed, and a plurality of support portions are installed in an inner space surrounded by the rib portion, for example, in a concentric manner to install the chuck plate. It is known to construct. During the heating and cooling of the wafer, an inert gas such as Ar gas is supplied through the gas passage formed in the chuck body to the internal space, and an inert gas atmosphere is formed in the internal space defined by the rib portion and the back surface of the wafer. This assists heat transfer from the chuck body to the wafer so that the wafer can be heated and cooled efficiently.

여기서, 정전척용의 척 플레이트로서는, 질화알루미늄이나 질화규소 등의 고 전기 저항을 나타내는 소결체가 이용되지만, 상기와 같이 불활성 가스 분위기를 형성할 수 있도록 구성한 것에서는, 웨이퍼와의 접촉 면적이 작아지지 않을 수 없다. 이 때문에, 전극에 인가해야 할 전압의 증가를 발생시키지 않고 웨이퍼를 확실히 흡착하도록 구성하기 위해서는, 척 플레이트의 웨이퍼와의 접촉면, 즉, 리브부나 돌기부의 표면을 소정의 표면 거칠기 및 평탄도로 가공할 필요가 있다.Here, as the chuck plate for the electrostatic chuck, a sintered body exhibiting high electrical resistance such as aluminum nitride or silicon nitride is used. However, in the structure configured to form an inert gas atmosphere as described above, the contact area with the wafer may not be small. none. For this reason, in order to reliably adsorb the wafer without generating an increase in the voltage to be applied to the electrode, it is necessary to process the contact surface of the chuck plate, that is, the surface of the rib portion or the projection portion, to a predetermined surface roughness and flatness. There is.

이로부터, 소결체를 왁스에 함침하고, 그 표면을 평면 연삭, 랩 연마(lapping)나 화학적 기계적 폴리싱(CMP) 한 후 왁스를 제거하여, 소정의 표면 거칠기 및 평탄도(평행도)가 되도록 가공하는 것이 예를 들면 특허 문헌 2에 알려져 있다.From this, the sintered body is impregnated with wax, the surface is subjected to surface grinding, lapping or chemical mechanical polishing (CMP), and then the wax is removed and processed to have a predetermined surface roughness and flatness (parallelity). For example, it is known by patent document 2.

그러나, 상기와 같이 소결체의 표면을 평면 연삭이나 랩 연마하여 되는 척 플레이트를 이용하면, 그 사용 개시 당초, 전극에의 전압 인가를 정지해도, 잔류 전하의 영향을 받아 웨이퍼가 이탈할 수 없는 경우가 생기고 있었다. 이러한 문제는, 더미 기판을 이용해 척 플레이트에서의 흡착, 이탈을 수백 회 반복하는 것으로 해결할 수 있지만(즉, 잔류 전하의 영향을 받지 않고 웨이퍼의 이탈을 양호하게 할 수 있다), 이것으로는, 정전척으로서 기능시키는데 시간이 들어, 제조 공정이 증가하는 불편함이 있다.However, when using the chuck plate which performs the surface grinding and lapping grinding of the surface of a sintered compact as mentioned above, even if the voltage application to an electrode is stopped at the beginning of use, the wafer cannot be removed under the influence of residual electric charge. It was happening. This problem can be solved by repeating the adsorption and detachment of the chuck plate hundreds of times using the dummy substrate (that is, the wafer can be well removed without being affected by the residual charge). It takes time to function as a chuck, and there is an inconvenience in increasing the manufacturing process.

거기서, 본 발명자 등은 열심히 연구를 거듭해 척 플레이트의 사용 개시 당초에 웨이퍼를 이탈할 수 없는 문제는, 척 플레이트가 질화알루미늄 소결체로 이루어지는 경우를 예로 설명하면, 평면 연삭이나 랩 연마에 의해 소결체 표면이 손상을 받아 그 표면에 분리되기 시작한 질화알루미늄 입자가 국소적으로 존재하고, 이러한 질화알루미늄 입자가 전기적으로 플로팅 상태가 됨으로써, 전극에의 전압 인가를 정지했을 때에 저항이 되어 잔류 전하를 방류할 수 없기 때문에 발생하고 있다는 것을 알아냈다.Therefore, the present inventors have studied diligently and cannot leave the wafer at the beginning of the use of the chuck plate. In the case where the chuck plate is made of an aluminum nitride sintered body as an example, the surface of the sintered body is formed by plane grinding or lap polishing. The aluminum nitride particles which have been damaged and started to separate on the surface are present locally, and the aluminum nitride particles are electrically floating, which becomes a resistance when the voltage application to the electrode is stopped and cannot discharge residual charge. I figured out that it was happening.

특허 문헌 1 : 일본 특개평1-321136호 공보Patent Document 1: Japanese Patent Application Laid-Open No. 1-321136 특허 문헌 2 : 일본 특허 공개 제2000-21963호 공보Patent Document 2: Japanese Patent Application Laid-Open No. 2000-21963

본 발명은, 이상의 점에 비추어, 사용 개시 당초부터 기판의 이탈 불량이 발생하기 어려운 생산성이 좋은 정전척용의 척 플레이트의 제조 방법을 제공하는 것을 그 과제로 하는 것이다.SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a method for producing a chuck plate for an electrostatic chuck with good productivity, which is unlikely to cause detachment defects of a substrate from the beginning of use.

상기 과제를 해결하기 위해서, 본 발명은, 전극을 가지는 척 본체의 표면을 덮는 유전체로 된 정전척용의 척 플레이트의 제조 방법으로, 원료 분말을 소정 형상으로 압축 성형한 후, 소결하여 소결체를 얻는 공정과, 상기 소결체 중, 흡착해야 할 기판이 접하는 표면을 연마 가공에 의해 소정의 표면 거칠기 및 평탄도로 형성하는 공정과, 상기 연마 가공에 수반하여 상기 표면에 생긴 분리되기 시작하는 입자만을 선택적으로 제거하는 블라스트 처리를 실시하는 공정을 포함하는 것을 특징으로 한다.MEANS TO SOLVE THE PROBLEM In order to solve the said subject, this invention is the manufacturing method of the chuck plate for electrostatic chucks made from the dielectric which covers the surface of the chuck main body which has an electrode, The process of compression-molding raw material powder to a predetermined shape, and then sintering to obtain a sintered compact And forming a surface of the sintered body that the substrate to be adsorbed to have a predetermined surface roughness and flatness by polishing, and selectively removing only the particles that start to separate from the surface along with the polishing. It is characterized by including the process of performing a blast process.

본 발명에 의하면, 연마 가공 후에 블라스트 처리를 실시하는 것에 의해, 연마 가공에 수반해 상기 표면에 생긴 분리되기 시작하는 입자만이 선택적으로 제거된다. 이 때문에, 이러한 척 플레이트를 척 본체에 조립, 정전척으로서 사용하는 당초부터, 전극에의 전압 인가를 정지했을 때의 잔류 전하의 영향을 받지 않고 처리해야 할 기판인 웨이퍼를 양호하게 이탈할 수 있다. 또, 본 발명에서는, 연마 가공 후에 블라스트 처리를 실시하지만, 척 플레이트에서의 기판의 흡착, 이탈을 수백 회 반복하는 종래법과 비교하여, 그 작업이 간단하고, 생산성을 향상할 수 있고, 게다가, 상기 블라스트 처리에서는, 척 플레이트 표면의 표면 거칠기나 평탄도가 대부분 나빠지지 않고, 웨이퍼와의 접촉 면적이 감소하지 않는다.According to the present invention, by performing a blasting process after polishing, only the particles which start to separate on the surface with polishing are selectively removed. For this reason, from the beginning of assembling such a chuck plate into the chuck body and using it as an electrostatic chuck, the wafer, which is a substrate to be processed, can be satisfactorily released without being affected by the residual charge when the voltage is applied to the electrode. . Moreover, in this invention, although the blasting process is performed after grinding | polishing process, compared with the conventional method which repeats the adsorption | suction and detachment of the board | substrate in a chuck plate several hundred times, the operation | work is simple and productivity can be improved, and the said In the blasting process, the surface roughness and flatness of the surface of the chuck plate do not deteriorate most, and the contact area with the wafer does not decrease.

덧붙여 본 발명에 있어서, 상기 블라스트 처리로서 습식(wet) 블라스트를 이용하는 것이 가장 적합하다.In addition, in this invention, it is most suitable to use a wet blast as said blasting process.

도 1은 본 실시 형태의 제조 방법에 의해 제작된 척 플레이트를 조립하여 구성된 정전척을 모식적으로 설명하는 단면도이다.
도 2는 본 실시 형태의 척 플레이트의 일부를 확대해 그 제작 공정을 설명하는 도면이다.BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing explaining typically the electrostatic chuck comprised by assembling the chuck plate produced by the manufacturing method of this embodiment.
It is a figure explaining the manufacturing process which expands a part of chuck plate of this embodiment.

이하에 도면을 참조하여, 처리해야 할 기판을 웨이퍼(W)로 하고, PVD법, CVD법 등에 의한 막 형성 처리, 이온 주입 처리나 에칭 처리 등의 처리를 실시하는 진공 처리 장치 내에서, 그 사용 개시 당초부터 웨이퍼(W)를 유지하고, 처리 후에 확실히 이탈할 수 있는 본 발명의 실시 형태의 제조 방법에 의해 제작된 척 플레이트를 갖춘 정전척(EC)을 설명한다.With reference to the drawings below, the substrate to be treated is used as a wafer W and used in a vacuum processing apparatus that performs a film forming process, an ion implantation process or an etching process by the PVD method, the CVD method, or the like. The electrostatic chuck EC provided with the chuck plate produced by the manufacturing method of the embodiment of the present invention which can hold the wafer W from the beginning of the start and can be reliably detached after the treatment will be described.

도 1에 나타내듯이, 정전척(EC)은, 도시 생략한 처리실 내의 바닥부에 배치되는 척 본체(1)와 이 척 본체(1)의 표면에 설치된 유전체인 척 플레이트(2)로 구성된다. 척 본체(1)는, 예를 들면 질화알루미늄제이며, 그 상부에는 도시 생략한 절연층을 개입시켜 양과 음의 전극(3a, 3b)이 조립되어, 공지의 척 전원(E)으로부터 직류 전압을 인가할 수 있게 되어 있다.As shown in FIG. 1, the electrostatic chuck EC is comprised from the chuck main body 1 arrange | positioned at the bottom part in the process chamber not shown, and the chuck plate 2 which is a dielectric provided in the surface of this chuck main body 1. As shown in FIG. The chuck body 1 is made of, for example, aluminum nitride, and the positive and negative electrodes 3a and 3b are assembled on the upper portion of the chuck main body 1 through an insulating layer (not shown). It is to be authorized.

또, 척 본체(1)에는, 상하 방향으로 관통하는 가스 통로(4)가 형성되고, 이 가스 통로(4)의 하단은, 매스 플로우 콘트롤러(5)를 개입시켜 설치한 가스관(6)을 통해 Ar 가스 등의 불활성 가스를 수용한 가스원(7)에 연통하고, 이들 부품이 본 실시의 형태의 가스 공급 수단을 구성한다. 게다가 척 본체(1)에는, 공지의 구조를 가지는 저항 가열식의 히터(8)가 내장되어 웨이퍼(W)를 소정 온도로 가열 유지할 수 있게 되어 있다.Moreover, the gas passage 4 which penetrates up and down is formed in the chuck | zipper main body 1, The lower end of this gas passage 4 is via the gas pipe 6 provided through the mass flow controller 5, and the like. It communicates with the gas source 7 which accommodated inert gas, such as Ar gas, and these components comprise the gas supply means of this embodiment. In addition, the resistance heating heater 8 having a known structure is built in the chuck body 1 so that the wafer W can be heated and maintained at a predetermined temperature.

척 플레이트(2)는, 예를 들면 질화알루미늄 소결체로 구성되고, 웨이퍼(W) 이면의 외주연부가 면접촉 가능한 환상의 리브부(2a)와, 리브부(2a)로 둘러싸인 내부 공간(2b)에서 동심 모양으로 세워 설치된 복수개의 막대 모양의 지지부(2c)를 구비한다. 이 경우, 지지부(2c)의 높이는, 리브부(2a)의 높이보다 약간 작게 되도록 설정되어 척 플레이트(2) 표면에서 웨이퍼(W)를 흡착했을 때에, 각 지지부(2c)로 웨이퍼(W)를 지지하게 되어 있다.The chuck plate 2 is made of, for example, an aluminum nitride sintered body, and an annular rib portion 2a in which the outer peripheral portion of the back surface of the wafer W is in surface contact and an inner space 2b surrounded by the rib portion 2a. It is provided with a plurality of rod-shaped support portion (2c) installed in a concentric shape. In this case, the height of the support part 2c is set to be slightly smaller than the height of the rib part 2a, and when the wafer W is adsorbed on the surface of the chuck plate 2, the wafer W is supported by each support part 2c. To be supported.

그리고, 척 플레이트(2)에 웨이퍼(W)를 올려 놓은 후, 두 개의 전극(3a, 3b) 사이에 직류 전압을 인가함으로써 발생하는 정전기력으로 웨이퍼(W)가 척 플레이트(2)의 표면에서 흡착된다. 이때, 웨이퍼(W) 이면의 외주연부가 리브부(2a)와 그 둘레에 걸쳐 면접촉 하는 것에 의해 내부 공간(2b)이 대략 밀폐된다. 이 상태에서, 가스 공급 수단을 개입시켜 Ar 가스를 공급하면, 내부 공간(2b)에 가스 분위기가 형성된다. 이것에 의해, 히터(8)를 작동시켜 웨이퍼(W)를 가열하는 경우, 리브부(2a)와 웨이퍼(W) 이면에 의해 정의되는 내부 공간(2b)에 불활성 가스 분위기를 형성함으로써, 웨이퍼(W)에의 열전달을 도와 효율적으로 웨이퍼(W)를 가열할 수 있다. 덧붙여, 본 실시 형태에서는, 히터(8)만을 마련한 것을 예로 설명하고 있지만, 이것으로 한정되는 것은 아니고, 공지의 냉각 수단을 조립해 구성해도 괜찮다.Then, after placing the wafer W on the chuck plate 2, the wafer W is adsorbed on the surface of the chuck plate 2 by the electrostatic force generated by applying a DC voltage between the two electrodes 3a and 3b. do. At this time, the inner periphery 2b is substantially sealed by the outer peripheral part of the back surface of the wafer W being brought into surface contact with the rib portion 2a over its circumference. In this state, when Ar gas is supplied through a gas supply means, a gas atmosphere is formed in the internal space 2b. As a result, when the heater 8 is operated to heat the wafer W, an inert gas atmosphere is formed in the internal space 2b defined by the rib portion 2a and the back surface of the wafer W, thereby providing a wafer ( The wafer W can be efficiently heated by assisting heat transfer to W). In addition, although this embodiment demonstrates the thing which provided only the heater 8 as an example, it is not limited to this, You may assemble and comprise a well-known cooling means.

다음에, 질화알루미늄 소결체인 척 플레이트(2)의 제조 방법에 대해 설명한다. 먼저, 환원 질화법 등의 공지의 방법으로 원료 분말인 질화알루미늄 분말을 얻는다. 다음에, 성형성을 향상시키는 공지의 유기 바인더나 소결조제를 질화알루미늄 분말에 적당히 첨가한 후, 공지의 성형기를 이용해 원료 분말을 성형하여, 상술의 형상을 가지는 성형체를 제작한다. 그리고, 이와 같이 얻어진 성형체를, 공지의 소결 노에서 2000℃의 불활성 가스 분위기에서 소성하여, 소망하는 체적 저항율을 가지는 질화알루미늄 소결체를 얻는다. 덧붙여, 질화알루미늄 소결체를 제작하는 경우, 소위 핫 프레스 소성법을 이용할 수가 있다.Next, the manufacturing method of the chuck plate 2 which is an aluminum nitride sintered compact is demonstrated. First, aluminum nitride powder which is a raw material powder is obtained by a known method such as reduction nitriding method. Next, after adding a well-known organic binder and a sintering adjuvant which improve moldability to an aluminum nitride powder suitably, a raw material powder is shape | molded using a well-known molding machine, and the molded object which has the above-mentioned shape is produced. And the molded object obtained in this way is baked in well-known sintering furnace in 2000 degreeC inert gas atmosphere, and the aluminum nitride sintered compact which has a desired volume resistivity is obtained. In addition, when manufacturing an aluminum nitride sintered compact, what is called a hot press baking method can be used.

다음에, 도 2에 나타나듯이, 이와 같이 하여 얻은 질화알루미늄 소결체(S)의 표면 중, 웨이퍼(W)와의 접촉면이 연마 가공에 의해 소정의 표면 거칠기 및 평탄도(평행도)로 가공된다. 연마 가공으로서는, 다이아몬드 숫돌을 이용한 평면 연삭, 유리(遊離) 연마 입자를 이용한 랩 가공이나 화학적 기계적 폴리싱(CMP)을 들 수 있고, 소정의 표면 거칠기(Ra: 0. 1㎛ 이하) 및 평탄도(0.005 이하)가 되도록 가공된다.Next, as shown in FIG. 2, among the surfaces of the aluminum nitride sintered body S thus obtained, the contact surface with the wafer W is processed to a predetermined surface roughness and flatness (parallelity) by polishing. Examples of the polishing include planar grinding using diamond grindstones, lapping using glass abrasive particles, and chemical mechanical polishing (CMP), and include predetermined surface roughness (Ra: 0.1 µm or less) and flatness ( 0.005 or less).

여기서, 도 2를 참조하여, 상기 질화알루미늄 소결체(S)에서는, 연마 가공 시에 그 표면이 손상을 받아 분리되기 시작하는 질화알루미늄 입자(g)가 국소적으로 존재하는 상태가 된다(도 2(a) 참조). 이와 같이 분리되기 시작하는 질화알루미늄 입자(g)가 웨이퍼(W)와의 접촉면에 존재하면, 해당 질화알루미늄 입자(g)가 전기적으로 플로팅 상태가 되어(도 2(b) 참조), 전극(3a, 3b)에의 전압 인가를 정지했을 때에 저항이 되어 잔류 전하를 방류할 수 없다(덧붙여 도 2중, 전하의 흐름이 화살표로 나타나 있다). 이 때문에, 특히 척 플레이트(2)의 사용 개시 당초에 웨이퍼의 이탈 불량을 많이 발생시킬 우려가 있다.Here, with reference to FIG. 2, in the said aluminum nitride sintered compact S, the surface will become damaged and the aluminum nitride particle g which starts to isolate | separate at the time of a grinding | polishing process will be in the state which exists locally (FIG. 2 ( a)). When the aluminum nitride particles g which start to be separated in this way exist on the contact surface with the wafer W, the aluminum nitride particles g are in an electrically floating state (see FIG. 2 (b)), and the electrodes 3a, When the voltage application to 3b) is stopped, the resistance becomes a discharge and residual charge cannot be discharged (in addition, in Fig. 2, the flow of the charge is indicated by an arrow). For this reason, there exists a possibility of generating a lot of defect | deviation of a wafer especially at the beginning of use start of the chuck plate 2.

거기서, 본 실시 형태에서는, 질화알루미늄 소결체(S)인 척 플레이트(2)의 웨이퍼(W)와의 접촉면에 존재하는 분리되기 시작하는 질화알루미늄 입자(g)만을 선택적으로 제거하는 블라스트 처리를 실시하도록 했다(도 2(c) 참조). 이러한 블라스트 처리로서는, 연마 입자를 혼합한 물을 공기와 동시에 대상물, 즉, 척 플레이트(2)에 내뿜는 것에 의해, 대상물의 표면을 연마하는 소위 습식 블라스트가 가장 적합하다.Thereby, in this embodiment, the blast process which selectively removes only the aluminum nitride particle g which starts to isolate | separate which exists in the contact surface with the wafer W of the chuck plate 2 which is aluminum nitride sintered compact S was made to perform. (See Figure 2 (c)). As such a blast treatment, a so-called wet blast for polishing the surface of the object is most suitable by blowing water mixed with abrasive particles onto the object, that is, the chuck plate 2 simultaneously with air.

습식 블라스트에 이용되는 연마 입자로서는, 알루미나제로, 그 입경이 소결된 알루미나의 평균 입경 이하의 범위의 것이 이용되고, 소정의 중량비로 물에 혼합된다. 또, 블라스트 처리시의 수압은 0.01~0.05 MPa, 압축 공기의 압력은 0.1~0.3 MPa의 범위에서 설정하는 것이 바람직하다. 수압이나 공기압이 상기보다 낮아지면, 입자간의 접착 강도가 떨어지고 있는 입자를 제거할 수 없고, 한편으로, 수압이나 공기압이 상기보다 높아지면, 표면 거칠기의 악화와 함께, 입자간의 접착 강도가 떨어지고 있는 입자를 제거할 수 없는 문제가 생긴다.As abrasive grains used for wet blasting, the thing of the range below the average particle diameter of the alumina whose particle diameter was sintered by alumina is used, and it mixes with water in a predetermined weight ratio. Moreover, it is preferable to set the water pressure at the time of a blast process in 0.01-0.05 MPa, and the pressure of compressed air in the range of 0.1-0.3 MPa. If the water pressure or air pressure is lower than the above, the particles whose adhesive strength between the particles is lowered cannot be removed. On the other hand, if the water pressure or air pressure is higher than the above, the particles with the surface roughness deteriorated and the adhesive strength between the particles dropping. There is a problem that can not be removed.

이와 같이 연마 가공 후에 습식 블라스트 처리를 더 실시하는 것에 의해, 연마 가공에 수반하여 표면에 생긴 분리되기 시작하고 있는 입자(g)만이 선택적으로 제거된다. 이 때문에, 본 실시 형태의 제조 방법으로 제작된 척 플레이트(2)를 상기 척 본체(1)에 조립하여 정전척(EC)으로 사용하는 경우, 그 당초부터, 척 전원(E)를 개입시켜 정부의 전극(3a, 3b)에 전압을 인가하여 소정의 흡착력으로 웨이퍼(W)를 흡착한 후, 그 전압 인가를 정지했을 때, 잔류 전하의 영향을 받지 않고 웨이퍼(W)를 양호하게 이탈할 수 있다(도 2(d) 참조). 또, 연마 가공 후에 블라스트 처리를 실시하고 있지만, 척 플레이트(2)에서의 웨이퍼(W)의 흡착, 이탈을 수백 회 반복하는 종래법과 비교하여, 그 작업이 간단하고, 생산성을 향상할 수 있으며, 게다가, 상기 블라스트 처리에서는, 척 플레이트(2) 표면의 표면 거칠기나 평탄도가 대부분 나빠지지 않고, 웨이퍼(W)와의 접촉 면적이 감소하지 않는다.By further performing a wet blasting treatment after the polishing process in this manner, only the particles (g) that are beginning to separate from the surface along with the polishing process are selectively removed. For this reason, when the chuck plate 2 produced by the manufacturing method of the present embodiment is assembled to the chuck body 1 and used as the electrostatic chuck EC, from the beginning, the chuck power supply E is interposed. When the voltage is applied to the electrodes 3a and 3b of the electrode to adsorb the wafer W with a predetermined adsorption force, and the application of the voltage is stopped, the wafer W can be released well without being affected by the residual charge. (See FIG. 2 (d)). Moreover, although the blasting process is performed after polishing, compared with the conventional method of repeating the adsorption and detachment of the wafer W on the chuck plate 2 hundreds of times, the operation is simple and the productivity can be improved. In addition, in the blasting process, the surface roughness and flatness of the surface of the chuck plate 2 do not deteriorate most, and the contact area with the wafer W does not decrease.

이상의 효과를 나타내기 위해서, 공지의 방법으로 상기 설명한 형태를 가지는 질화알루미늄 소결체를 제작했다. 그리고, 웨이퍼(W)와의 접촉면을 경면 가공해, 0.1㎛의 표면 거칠기로 했다. 그 후, 습식 블라스트 처리를 실시했다.In order to show the above effect, the aluminum nitride sintered compact which has the form demonstrated above by the well-known method was produced. And the contact surface with the wafer W was mirror-processed, and it was set as the surface roughness of 0.1 micrometer. Thereafter, wet blasting was performed.

다음에, 척 플레이트(2)를 척 본체(1)에 조립하여 정전척(EC)을 구성하고, 웨이퍼(W)를 정전척(1)의 바로 위쪽에 웨이퍼(W)를 들어올리는 공지의 리프트 핀의 복수를 갖춘 스테이지에 설치했다. 척 플레이트(2) 상에 웨이퍼(W)를 올려 놓은 후, 척 전원(E)에 의해 0~1000 V의 범위의 전압으로 웨이퍼를 흡착했다. 그 후, 척 전원(E)으로부터의 전압 인가를 정지하고 리프트 기구를 작동시키면, 어떠한 이탈 불량도 일으키지 않고 리프트 핀에 의해 웨이퍼(W)를 들어올릴 수 있는 것을 확인할 수 있었다.Next, a well-known lift for assembling the chuck plate 2 to the chuck body 1 to form an electrostatic chuck EC, and lifting the wafer W directly above the electrostatic chuck 1. It was installed on the stage with a plurality of pins. After placing the wafer W on the chuck plate 2, the wafer was adsorbed at a voltage in the range of 0 to 1000 V by the chuck power supply E. After that, when the application of the voltage from the chuck power supply E was stopped and the lift mechanism was operated, it was confirmed that the wafer W could be lifted by the lift pins without any deviation failure.

이상, 본 실시의 형태에 대해 설명했지만, 본 발명은 상기 구성의 것으로 한정되는 것은 아니다. 예를 들면, 질화규소 소결체 등의 다른 재료로 척 플레이트를 구성하는 경우에도 본 발명은 적용할 수 있다. 또, 습식 블라스트 처리를 이용하는 경우를 예로 설명했지만, 분리되기 시작하고 있는 입자만을 간단한 방법으로 선택적으로 제거할 수 있는 것이면, 다른 블라스트 방법도 적용할 수 있다.As mentioned above, although this embodiment was described, this invention is not limited to the thing of the said structure. For example, this invention is applicable also when a chuck plate is comprised from other materials, such as a silicon nitride sintered compact. Moreover, although the case where a wet blasting process is used was demonstrated as an example, as long as only the particle | grains which are beginning to separate can be selectively removed by a simple method, another blasting method can also be applied.

EC 정전척
1 척 본체
2 척 플레이트(질화알루미늄 소결체(S))
2a 리브부
2b 내부 공간
2c 지지부
3a, 3b 전극
g 분리되기 시작하고 있는 AlN 입자
W 웨이퍼 EC electrostatic chuck
1 chuck body
2 chuck plate (aluminum nitride sintered body (S))
2a rib
2b internal space
2c support
3a, 3b electrode
g AlN particles starting to separate
W wafer

Claims (2)

전극을 가지는 척 본체의 표면을 덮는 유전체로 된 정전척용의 척 플레이트의 제조 방법으로,
원료 분말을 소정 형상으로 압축 성형한 후, 소결하여 소결체를 얻는 공정과,
상기 소결체 중, 흡착해야 할 기판이 접하는 표면을 연마 가공에 의해 소정의 표면 거칠기 및 평탄도로 형성하는 공정과, 상기 연마가공에 수반하여 상기 표면에 생긴 분리되기 시작하고 있는 입자만을 선택적으로 제거하는 블라스트 처리를 실시하는 공정을 포함하는 것을 특징으로 하는 정전척용의 척 플레이트의 제조 방법. In the manufacturing method of the chuck plate for electrostatic chuck made of a dielectric covering the surface of the chuck body having an electrode,
Compressing and molding the raw material powder into a predetermined shape, followed by sintering to obtain a sintered body,
Forming a surface in contact with the substrate to be adsorbed in the sintered body at a predetermined surface roughness and flatness by polishing, and selectively removing only the particles that are beginning to separate from the surface due to the polishing; The manufacturing method of the chuck plate for electrostatic chucks containing the process of performing a process. 청구항 1에 있어서, 상기 블라스트 처리는 습식 블라스트인 것을 특징으로 하는 정전척용의 척 플레이트의 제조 방법.The method of manufacturing a chuck plate for an electrostatic chuck according to claim 1, wherein the blast treatment is a wet blast.
KR1020117013611A 2008-12-25 2009-12-09 Method for manufacturing chuck plate for electrostatic chuck KR101316804B1 (en)

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