JPWO2010073514A1 - Manufacturing method of chuck plate for electrostatic chuck - Google Patents
Manufacturing method of chuck plate for electrostatic chuck Download PDFInfo
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- JPWO2010073514A1 JPWO2010073514A1 JP2010543796A JP2010543796A JPWO2010073514A1 JP WO2010073514 A1 JPWO2010073514 A1 JP WO2010073514A1 JP 2010543796 A JP2010543796 A JP 2010543796A JP 2010543796 A JP2010543796 A JP 2010543796A JP WO2010073514 A1 JPWO2010073514 A1 JP WO2010073514A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005422 blasting Methods 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims abstract description 17
- 238000005498 polishing Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000003746 surface roughness Effects 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000000748 compression moulding Methods 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 20
- 238000012545 processing Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
使用開始当初から、処理すべき基板たるウエハ（Ｗ）の脱離不良が発生し難い生産性のよい静電チャック用のチャックプレートの製造方法を提供する。電極（３ａ、３ｂ）を有するチャック本体（１）の表面を覆う誘電体からなる静電チャック（ＥＳ）用のチャックプレート（２）の製造方法であって、原料粉末を所定形状に圧縮成形した後、焼結して焼結体を得る工程と、焼結体のうち、吸着すべき基板が当接する表面を研磨加工により所定の表面粗さ及び平坦度に形成する工程と、研磨加工に伴い表面に生じた脱粒しかけている粒子のみを選択的に除去するブラスト処理を施す工程とを含む。Provided is a manufacturing method of a chuck plate for an electrostatic chuck that is less likely to cause a detachment failure of a wafer (W), which is a substrate to be processed, from the beginning of use. A method of manufacturing a chuck plate (2) for an electrostatic chuck (ES) made of a dielectric material covering the surface of a chuck body (1) having electrodes (3a, 3b), wherein raw material powder is compression molded into a predetermined shape After that, a step of obtaining a sintered body by sintering, a step of forming a surface on which the substrate to be adsorbed in the sintered body abuts with a predetermined surface roughness and flatness by polishing, and accompanying the polishing And a step of performing a blasting process for selectively removing only particles that are about to be degranulated on the surface.
Description
本発明は、シリコンウエハ等の処理すべき基板を吸着保持する静電チャック用の誘電体たるチャックプレートの製造方法に関する。 The present invention relates to a method for manufacturing a chuck plate as a dielectric for an electrostatic chuck that holds a substrate to be processed such as a silicon wafer by suction.
半導体製造工程において所望のデバイス構造を得るためにＰＶＤ法、ＣＶＤ法等による成膜処理、イオン注入処理やエッチング処理などの処理が行われ、これらの処理を行う真空処理装置では、真空雰囲気中の処理室にてシリコンウエハ（以下、「ウエハ」という）を位置決め保持するために所謂静電チャックが設けられている。従来、静電チャックとしては、正負の電極を埋設したチャック本体上面に、誘電体たるチャックプレートを装着してなる所謂双極型のものが例えば特許文献１で知られている。
In order to obtain a desired device structure in a semiconductor manufacturing process, a film forming process such as a PVD method or a CVD method, an ion implantation process, an etching process, or the like is performed. In a vacuum processing apparatus that performs these processes, A so-called electrostatic chuck is provided to position and hold a silicon wafer (hereinafter referred to as “wafer”) in the processing chamber. Conventionally, as an electrostatic chuck, a so-called bipolar type in which a chuck plate as a dielectric is mounted on an upper surface of a chuck body in which positive and negative electrodes are embedded is known from, for example,
また、真空処理装置内で行われる処理によっては、基板を所定温度に制御する場合があり、このような場合には、チャック本体等に例えば抵抗加熱式の加熱手段を組み込むと共に、ウエハの裏面（所定の処理が行われる面と反対側）の外周縁部と面接触するリブ部を形成し、このリブ部で囲繞された内部空間に例えば同心状に複数個の支持部を立設してチャックプレートを構成することが知られている。そして、ウエハの加熱、冷却時には、上記内部空間にチャック本体に形成したガス通路を介してＡｒガスなどの不活性ガスを供給し、リブ部とウエハ裏面とで画成される内部空間に不活性ガス雰囲気を形成することで、チャック本体からウエハへの熱伝達をアシストして、効率よくウエハを加熱、冷却できるようにしている。 Further, depending on the processing performed in the vacuum processing apparatus, the substrate may be controlled to a predetermined temperature. In such a case, for example, a resistance heating type heating means is incorporated in the chuck body and the like, and the back surface of the wafer ( A rib portion that is in surface contact with the outer peripheral edge portion on the side opposite to the surface on which the predetermined processing is performed is formed, and a plurality of support portions are erected, for example, concentrically in an internal space surrounded by the rib portion. It is known to constitute a plate. When heating or cooling the wafer, an inert gas such as Ar gas is supplied to the internal space through a gas passage formed in the chuck body, and the internal space defined by the rib portion and the wafer back surface is inert. By forming a gas atmosphere, heat transfer from the chuck body to the wafer is assisted so that the wafer can be efficiently heated and cooled.
ここで、静電チャック用のチャックプレートとしては、窒化アルミや窒化ケイ素等の高電気抵抗を示す焼結体が用いられるが、上記のように不活性ガス雰囲気を形成し得るように構成したものでは、ウエハとの接触面積が小さくならざるを得ない。このため、電極に印加すべき電圧の増加を招くことなしにウエハを確実に吸着するように構成するためには、チャックプレートのウエハとの接触面、即ち、リブ部や突起部の上面を所定の表面粗さ及び平坦度に加工する必要がある。 Here, as the chuck plate for the electrostatic chuck, a sintered body having a high electric resistance such as aluminum nitride or silicon nitride is used, but it is configured so that an inert gas atmosphere can be formed as described above. Then, the contact area with the wafer must be reduced. For this reason, in order to reliably adsorb the wafer without causing an increase in the voltage to be applied to the electrodes, the contact surface of the chuck plate with the wafer, that is, the upper surface of the rib portion or the protrusion portion is predetermined. It is necessary to process the surface roughness and flatness.
このことから、焼結体をワックスに含浸し、その表面を平面研削、ラップ研磨やケミカルメカニカルポリッシング(CMP) した後、ワックスを除去して、所定の表面粗さ及び平坦度（平行度）となるように加工することが例えば特許文献２で知られている。 From this, the sintered body is impregnated with wax, the surface is subjected to surface grinding, lapping and chemical mechanical polishing (CMP), and then the wax is removed to obtain a predetermined surface roughness and flatness (parallelism). For example, Japanese Patent Application Laid-Open No. H10-260473 discloses that processing is performed.
然し、上記のように焼結体の表面を平面研削やラップ研磨してなるチャックプレートを用いると、その使用開始当初、電極への電圧印加を停止しても、残留電荷の影響を受けてウエハが離脱できない場合が生じていた。このような問題は、ダミー基板を用いてチャックプレートでの吸着、脱離を数百回繰り返すことで解決できる（即ち、残留電荷の影響を受けずにウエハの脱離を良好に行い得る）が、これでは、静電チャックとして機能させるのに手間がかかり、製造工程が増えるという不具合がある。 However, when using a chuck plate that is obtained by surface grinding or lapping the surface of the sintered body as described above, even if voltage application to the electrode is stopped at the beginning of use, the wafer is affected by the residual charge. May have been unable to leave. Such a problem can be solved by repeating adsorption and desorption on the chuck plate several hundred times using a dummy substrate (that is, the wafer can be desorbed satisfactorily without being affected by the residual charge). In this case, there is a problem that it takes time and effort to function as an electrostatic chuck, and the number of manufacturing processes increases.
そこで、本発明者らは鋭意研究を重ね、チャックプレートの使用開始当初にウエハを脱離できない問題は、チャックプレートが窒化アルミ焼結体からなる場合を例に説明すると、平面研削やラップ研磨により焼結体表面がダメージを受け、その表面に脱粒しかけた窒化アルミ粒子が局所的に存在し、これらの窒化アルミ粒子が電気的にフローティング状態となることで、電極への電圧印加を停止したときに抵抗となって残留電荷を逃がすことができないため、発生しているとの知見を得た。 Therefore, the present inventors have conducted intensive research, and the problem that the wafer cannot be detached at the beginning of use of the chuck plate is explained by an example in which the chuck plate is made of an aluminum nitride sintered body. When the surface of the sintered body is damaged, and aluminum nitride particles that have started to shed are locally present on the surface. When these aluminum nitride particles are in an electrically floating state, voltage application to the electrode is stopped. As a result, it was found that the residual charge was generated because the residual charge could not be released.
本発明は、以上の点に鑑み、使用開始当初から基板の脱離不良が発生し難い生産性のよい静電チャック用のチャックプレートの製造方法を提供することをその課題とするものである。 In view of the above, an object of the present invention is to provide a method for manufacturing a chuck plate for an electrostatic chuck that is less likely to cause a substrate detachment failure from the beginning of use and has good productivity.
上記課題を解決するために、本発明は、電極を有するチャック本体の表面を覆う誘電体からなる静電チャック用のチャックプレートの製造方法であって、原料粉末を所定形状に圧縮成形した後、焼結して焼結体を得る工程と、前記焼結体のうち、吸着すべき基板が当接する表面を研磨加工により所定の表面粗さ及び平坦度に形成する工程と、前記研磨加工に伴い前記表面に生じた脱粒しかけている粒子のみを選択的に除去するブラスト処理を施す工程とを含むことを特徴とする。 In order to solve the above problems, the present invention is a method of manufacturing a chuck plate for an electrostatic chuck made of a dielectric material that covers the surface of a chuck body having electrodes, and after compressing a raw material powder into a predetermined shape, A step of obtaining a sintered body by sintering, a step of forming a surface with which a substrate to be adsorbed contacts in the sintered body to a predetermined surface roughness and flatness by polishing, and accompanying the polishing And a step of performing a blasting process for selectively removing only particles that are about to be degranulated on the surface.
本発明によれば、研磨加工後にブラスト処理を行うことで、研磨加工に伴い前記表面に生じた脱粒しかけている粒子のみが選択的に除去される。このため、このようなチャックプレートをチャック本体に組付け、静電チャックとして使用する当初から、電極への電圧印加を停止したときの残留電荷の影響を受けずに処理すべき基板たるウエハを良好に脱離できる。また、本発明では、研磨加工後にブラスト処理を行うが、チャックプレートでの基板の吸着、脱離を数百回繰り返す従来法と比べて、その作業が簡単であり、生産性を向上でき、しかも、上記ブラスト処理では、チャックプレート表面の表面粗さや平坦度が殆ど劣化せず、ウエハとの接触面積が減少することはない。 According to the present invention, by performing the blasting after the polishing process, only the particles that are about to be degranulated on the surface accompanying the polishing process are selectively removed. For this reason, from the beginning when such a chuck plate is assembled to a chuck body and used as an electrostatic chuck, a wafer as a substrate to be processed is not affected by the residual charge when the voltage application to the electrode is stopped. Can be detached. In the present invention, blasting is performed after polishing, but the work is simpler and productivity can be improved as compared with the conventional method in which adsorption and desorption of the substrate with the chuck plate are repeated hundreds of times. In the blasting process, the surface roughness and flatness of the chuck plate surface are hardly deteriorated, and the contact area with the wafer is not reduced.
なお、本発明において、前記ブラスト処理としてウエットブラストを用いることが最適である。 In the present invention, it is optimal to use wet blasting as the blasting process.
以下に図面を参照して、処理すべき基板をウエハＷとし、ＰＶＤ法、ＣＶＤ法等による成膜処理、イオン注入処理やエッチング処理などの処理を行う真空処理装置内で、その使用開始当初からウエハＷを保持し、処理後に確実に脱離できる本発明の実施形態の製造方法により製作されたチャックプレートを備えた静電チャックＥＣを説明する。 With reference to the drawings, the substrate to be processed is a wafer W, and the vacuum processing apparatus performs processing such as film formation processing, ion implantation processing, etching processing, etc. by PVD method, CVD method, etc. from the beginning of its use. An electrostatic chuck EC including a chuck plate manufactured by the manufacturing method according to the embodiment of the present invention that holds the wafer W and can be reliably detached after processing will be described.
図１に示すように、静電チャックＥＣは、図示省略の処理室内の底部に配置されるチャック本体１と、このチャック本体１の上面に設けられた誘電体たるチャックプレート２とから構成される。チャック本体１は、例えば窒化アルミ製であり、その上部には図示省略の絶縁層を介して正負の電極３ａ、３ｂが組み込まれ、公知のチャック電源Ｅから直流電圧が印加できるようになっている。
As shown in FIG. 1, the electrostatic chuck EC includes a
また、チャック本体１には、上下方向に貫通するガス通路４が形成され、このガス通路４の下端は、マスフローコントローラ５を介設したガス管６を介してＡｒガス等の不活性ガスを収容したガス源７に連通し、これらの部品が本実施の形態のガス供給手段を構成する。さらに、チャック本体１には、公知の構造を有する抵抗加熱式のヒータ８が内蔵され、ウエハＷを所定温度に加熱保持できるようになっている。
In addition, a gas passage 4 penetrating in the vertical direction is formed in the
チャックプレート２は、例えば窒化アルミ焼結体から構成され、ウエハＷ裏面の外周縁部が面接触可能な環状のリブ部２ａと、リブ部２ａで囲繞された内部空間２ｂで同心状に立設された複数個の棒状の支持部２ｃとを備える。この場合、支持部２ｃの高さは、リブ部２ａの高さより僅かに小さくなるように設定され、チャックプレート２表面でウエハＷを吸着したときに、各支持部２ｃでウエハＷを支持するようになっている。
The
そして、チャックプレート２にウエハＷを載置した後、両電極３ａ、３ｂ間に直流電圧を印加することで発生する静電気力でウエハＷがチャックプレート２の表面で吸着される。このとき、ウエハＷ裏面の外周縁部がリブ部２ａとその全周に亘って面接触することで内部空間２ｂが略密閉される。この状態で、ガス供給手段を介してＡｒガスを供給すると、内部空間２ｂにガス雰囲気が形成される。これにより、ヒータ８を作動させてウエハＷを加熱する場合、リブ部２ａとウエハＷ裏面とで画成される内部空間２ｂに不活性ガス雰囲気を形成することで、ウエハＷへの熱伝達をアシストして効率よくウエハＷの加熱できる。なお、本実施形態では、ヒータ８のみを設けたものを例に説明しているが、これに限定されるものではなく、公知の冷却手段を組み付けて構成してもよい。
After the wafer W is placed on the
次に、窒化アルミ焼結体たるチャックプレート２の製造方法について説明する。先ず、還元窒化法等の公知の方法で原料粉末たる窒化アルミ粉末を得る。次に、成形性を向上させる公知の有機バインダーや焼結助剤を窒化アルミ粉末に適宜添加した後、公知の成形機を用いて原料粉末を成形し、上述の形状を有する成形体を作製する。そして、このように得られた成形体を、公知の焼結炉にて２０００℃の不活性ガス雰囲気で焼成し、所望の体積抵抗率を有する窒化アルミ焼結体を得る。なお、窒化アルミ焼結体を作製する場合、所謂ホットプレス焼成法を用いることができる。
Next, a manufacturing method of the
次に、図２に示すように、このようにして得た窒化アルミ焼結体Ｓの表面のうち、ウエハＷとの接触面が研磨加工により所定の表面粗さ及び平坦度（平行度）に加工される。研磨加工としては、ダイヤモンド砥石を用いた平面研削、遊離砥粒を用いたラップ加工やケミカルメカニカルポリッシング(CMP) が挙げられ、所定の表面粗さ（Ｒａ：０．１μｍ以下）及び平坦度（０．００５以下）となるように加工される。 Next, as shown in FIG. 2, among the surfaces of the aluminum nitride sintered body S thus obtained, the contact surface with the wafer W is polished to a predetermined surface roughness and flatness (parallelism). Processed. Examples of the polishing process include surface grinding using a diamond grindstone, lapping using free abrasive grains, and chemical mechanical polishing (CMP). A predetermined surface roughness (Ra: 0.1 μm or less) and flatness (0 .005 or less).
ここで、図２を参照して、上記窒化アルミ焼結体Ｓでは、研磨加工の際にその表面がダメージを受け、脱粒しかけた窒化アルミ粒子ｇが局所的に存在した状態となる（図２（ａ）参照）。このように脱粒しかけた窒化アルミ粒子ｇがウエハＷとの接触面に存在すると、当該窒化アルミ粒子ｇが電気的にフローティング状態となり（図２（ｂ）参照）、電極３ａ、３ｂへの電圧印加を停止したときに抵抗となって残留電荷を逃がすことができない（なお、図２中、電荷の流れが矢印で示されている）。このため、特にチャックプレート２の使用開始当初にウエハの脱離不良を多発させる虞がある。
Here, referring to FIG. 2, in the above-mentioned aluminum nitride sintered body S, the surface thereof is damaged during polishing, and the aluminum nitride particles g that have been shed are locally present (FIG. 2). (See (a)). When the aluminum nitride particles g that have been shed are present on the contact surface with the wafer W, the aluminum nitride particles g are in an electrically floating state (see FIG. 2B), and voltage is applied to the
そこで、本実施形態では、窒化アルミ焼結体Ｓたるチャックプレート２のウエハＷとの接触面に存在する脱粒しかけた窒化アルミ粒子ｇのみを選択的に除去するブラスト処理を施すようにした（図２（ｃ）参照）。このようなブラスト処理としては、砥粒を混合した水を空気と同時に対象物、つまり、チャックプレート２に吹き付けることで、対象物の表面を研磨する所謂ウエットブラストが最適である。
Therefore, in the present embodiment, a blasting process for selectively removing only the aluminum nitride particles g that have been shed is present on the contact surface of the
ウエットブラストに用いられる砥粒としては、アルミナ製で、その粒径が焼結されたアルミナの平均粒径以下の範囲のものが用いられ、所定の重量比で水に混合される。また、ブラスト処理の際の水圧は０．０１〜０．０５ＭＰａ、圧縮空気の圧力は０．１〜０．３ＭＰａの範囲で設定することが望ましい。水圧や空気圧が上記より低くなると、粒子間の接着強度が低下している粒子を取り除くことができず、他方で、水圧や空気圧が上記より高くなると、表面粗さの悪化と共に、粒子間の接着強度が低下している粒子を取り除くことができないという不具合が生じる。 As abrasive grains used for wet blasting, those made of alumina and having a grain size within the average grain size of sintered alumina are used, and are mixed with water at a predetermined weight ratio. Further, it is desirable to set the water pressure during the blasting process within a range of 0.01 to 0.05 MPa and the pressure of compressed air within a range of 0.1 to 0.3 MPa. If the water pressure or air pressure is lower than the above, it is not possible to remove the particles whose adhesion strength between the particles is reduced. On the other hand, if the water pressure or air pressure is higher than the above, the surface roughness is deteriorated and the adhesion between the particles is reduced. There arises a problem that particles whose strength is lowered cannot be removed.
このように研磨加工後に更にウエットブラスト処理を行うことで、研磨加工に伴い表面に生じた脱粒しかけている粒子ｇのみが選択的に除去される。このため、本実施形態の製造方法で製作されたチャックプレート２を上記チャック本体１に組付けて静電チャックＥＣとして使用する場合、その当初から、チャック電源Ｅを介して正負の電極３ａ、３ｂに電圧印加し、所定の吸着力でウエハＷを吸着した後、その電圧印加を停止したとき、残留電荷の影響を受けずにウエハＷを良好に脱離できる（図２（ｄ）参照）。また、研磨加工後にブラスト処理を行っているが、チャックプレート２でのウエハＷの吸着、脱離を数百回繰り返す従来法と比べて、その作業が簡単であり、生産性を向上でき、しかも、上記ブラスト処理では、チャックプレート２表面の表面粗さや平坦度が殆ど劣化せず、ウエハＷとの接触面積が減少することはない。
In this way, by further performing the wet blasting after the polishing process, only the particles g that are about to be degranulated on the surface due to the polishing process are selectively removed. For this reason, when the
以上の効果を示すために、公知の方法で上記説明した形態を有する窒化アルミ焼結体を作製した。そして、ウエハＷとの接触面を鏡面加工し、０．１μｍの表面粗さとした。その後、ウエットブラスト処理を実施した。 In order to show the above effects, an aluminum nitride sintered body having the above-described form was produced by a known method. Then, the contact surface with the wafer W was mirror-finished to obtain a surface roughness of 0.1 μm. Thereafter, wet blasting was performed.
次に、チャックプレート２をチャック本体１に組付けて静電チャックＥＣを構成し、ウエハＷを静電チャック１の直上にウエハＷを持ち上げる公知のリフトピンの複数を備えたステージに設置した。チャックプレート２上にウエハＷを載置した後、チャック電源Ｅにより０〜１０００Ｖの範囲の電圧でウエハを吸着した。その後、チャック電源Ｅからの電圧印加を停止しリフト機構を作動させると、何ら脱離不良を生じることなく、リフトピンによりウエハＷが持ち上げられることが確認できた。
Next, the
以上、本実施の形態について説明したが、本発明は上記構成のものに限定されるものではない。例えば、窒化シリコン焼結体等の他の材料からチャックプレートを構成する場合にも本発明は適用できる。また、ウエットブラスト処理を用いる場合を例に説明したが、脱粒しかけている粒子のみを簡単な方法で選択的に除去できるものであれば、他のブラスト方法であっても適用できる。 Although the present embodiment has been described above, the present invention is not limited to the above configuration. For example, the present invention can also be applied to a case where the chuck plate is made of another material such as a silicon nitride sintered body. Further, the case where wet blasting is used has been described as an example, but other blasting methods can also be applied as long as only particles that are about to be crushed can be selectively removed by a simple method.
ＥＣ 静電チャック
１ チャック本体
２ チャックプレート（窒化アルミ焼結体Ｓ）
２ａ リブ部
２ｂ 内部空間
２ｃ 支持部
３ａ、３ｂ 電極
ｇ 脱粒しかけているＡｌＮ粒子
Ｗ ウエハEC
g AlN particles that are about to shed
W wafer
Claims (2)
原料粉末を所定形状に圧縮成形した後、焼結して焼結体を得る工程と、
前記焼結体のうち、吸着すべき基板が当接する表面を研磨加工により所定の表面粗さ及び平坦度に形成する工程と、前記研磨加工に伴い前記表面に生じた脱粒しかけている粒子のみを選択的に除去するブラスト処理を施す工程とを含むことを特徴とする静電チャック用のチャックプレートの製造方法。A method of manufacturing a chuck plate for an electrostatic chuck comprising a dielectric covering the surface of a chuck body having electrodes,
After compression molding the raw material powder into a predetermined shape, sintering and obtaining a sintered body,
Of the sintered body, the step of forming the surface with which the substrate to be adsorbed contacts with a predetermined surface roughness and flatness by polishing, and only the particles that are about to be degranulated on the surface due to the polishing. And a blasting process for selectively removing the chuck plate.
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| JP2010543796A JP5188584B2 (en) | 2008-12-25 | 2009-12-09 | Manufacturing method of chuck plate for electrostatic chuck |
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| JP2008329612 | 2008-12-25 | ||
| JP2008329612 | 2008-12-25 | ||
| PCT/JP2009/006731 WO2010073514A1 (en) | 2008-12-25 | 2009-12-09 | Method for manufacturing chuck plate for electrostatic chuck |
| JP2010543796A JP5188584B2 (en) | 2008-12-25 | 2009-12-09 | Manufacturing method of chuck plate for electrostatic chuck |
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| JPWO2010073514A1 true JPWO2010073514A1 (en) | 2012-06-07 |
| JP5188584B2 JP5188584B2 (en) | 2013-04-24 |
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| US (1) | US20110256810A1 (en) |
| JP (1) | JP5188584B2 (en) |
| KR (1) | KR101316804B1 (en) |
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| RU2011130815A (en) | 2013-01-27 |
| WO2010073514A1 (en) | 2010-07-01 |
| RU2486631C2 (en) | 2013-06-27 |
| JP5188584B2 (en) | 2013-04-24 |
| US20110256810A1 (en) | 2011-10-20 |
| DE112009003808T5 (en) | 2012-06-06 |
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| TW201032943A (en) | 2010-09-16 |
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| CN102265390B (en) | 2014-10-15 |
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