TWI455791B - Method for manufacturing suction cup plate for electrostatic chuck - Google Patents

Method for manufacturing suction cup plate for electrostatic chuck Download PDF

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Publication number
TWI455791B
TWI455791B TW098144477A TW98144477A TWI455791B TW I455791 B TWI455791 B TW I455791B TW 098144477 A TW098144477 A TW 098144477A TW 98144477 A TW98144477 A TW 98144477A TW I455791 B TWI455791 B TW I455791B
Authority
TW
Taiwan
Prior art keywords
chuck
electrostatic chuck
manufacturing
wet blasting
sintered body
Prior art date
Application number
TW098144477A
Other languages
Chinese (zh)
Other versions
TW201032943A (en
Inventor
Takahiro Nanba
Naoki Morimoto
Kouji Sogabe
Masahiko Ishida
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW201032943A publication Critical patent/TW201032943A/en
Application granted granted Critical
Publication of TWI455791B publication Critical patent/TWI455791B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Claims (2)

一種靜電吸盤用之吸盤平板的製造方法,係為將具備有電極之吸盤本體的表面作覆蓋之由介電質所成的靜電吸盤用之吸盤平板之製造方法,其特徵為,包含有:將原料粉末壓縮成形為特定之形狀,而後進行燒結並得到燒結體之工程:和對於前述燒結體中之與應吸著的基板相抵接之表面,藉由研磨加工而形成為特定之表面粗度以及平坦度之工程;和施加僅將伴隨著前述研磨加工而在前述表面上所產生之即將脫粒的粒子作選擇性除去的濕噴砂處理之工程,將藉由濕噴砂而噴吹之水壓設定為0.01~0.05MPa,並且將壓縮空氣之壓力設定為0.1~0.3MPa。 A method for manufacturing a chuck plate for an electrostatic chuck is a method for manufacturing a chuck plate for electrostatic chucks comprising a surface of a chuck body having an electrode covered with a dielectric body, characterized in that: The raw material powder is compression-molded into a specific shape, and then sintered to obtain a sintered body: and a surface abutting on the substrate to be sucked in the sintered body is formed into a specific surface roughness by grinding processing and The work of flatness; and the application of wet blasting which selectively removes the particles to be threshed which are generated on the aforementioned surface along with the aforementioned grinding process, and sets the water pressure to be sprayed by wet blasting to 0.01~0.05MPa, and the pressure of the compressed air is set to 0.1~0.3MPa. 如申請專利範圍第1項所記載之靜電吸盤用之吸盤平板的製造方法,其中,將在濕噴砂中所使用之砥粒的粒徑,設為前述燒結體之平均粒徑以下。 The method for producing a chuck plate for an electrostatic chuck according to the first aspect of the invention, wherein the particle size of the niobium particles used in wet blasting is equal to or less than an average particle diameter of the sintered body.
TW098144477A 2008-12-25 2009-12-23 Method for manufacturing suction cup plate for electrostatic chuck TWI455791B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008329612 2008-12-25

Publications (2)

Publication Number Publication Date
TW201032943A TW201032943A (en) 2010-09-16
TWI455791B true TWI455791B (en) 2014-10-11

Family

ID=42287172

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098144477A TWI455791B (en) 2008-12-25 2009-12-23 Method for manufacturing suction cup plate for electrostatic chuck

Country Status (9)

Country Link
US (1) US20110256810A1 (en)
JP (1) JP5188584B2 (en)
KR (1) KR101316804B1 (en)
CN (1) CN102265390B (en)
DE (1) DE112009003808T5 (en)
RU (1) RU2486631C2 (en)
SG (1) SG171819A1 (en)
TW (1) TWI455791B (en)
WO (1) WO2010073514A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT521222B1 (en) * 2018-05-07 2020-04-15 Engel Austria Gmbh Device for handling and local fixing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW472500B (en) * 1999-08-12 2002-01-11 Ibiden Co Ltd Ceramic substrate, ceramic heater, electrostatic chuck and wafer probe for semiconductor manufacturing and checking device
TW527264B (en) * 2001-06-28 2003-04-11 Lam Res Corp Ceramic electrostatic chuck assembly and method of making
TW200423250A (en) * 2003-02-03 2004-11-01 Octec Inc Plasma processing device, electrode plate for the same, and manufacturing method for electrode plate
TWI247646B (en) * 2003-10-29 2006-01-21 Taiwan Semiconductor Mfg Disassembling device
TW200715357A (en) * 2005-07-21 2007-04-16 Sumitomo Heavy Industries Stage device

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2695436B2 (en) 1988-06-24 1997-12-24 富士通株式会社 Deterioration detection circuit for electrostatic chuck
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
JP3602901B2 (en) * 1996-01-30 2004-12-15 京セラ株式会社 Wafer holding member and method of manufacturing the same
JPH09219441A (en) * 1996-02-08 1997-08-19 Fujitsu Ltd Separation of substrate to be treated from electrostatic chick and manufacturing device
JP4236292B2 (en) * 1997-03-06 2009-03-11 日本碍子株式会社 Wafer adsorption apparatus and method for manufacturing the same
JP2000021963A (en) 1998-07-06 2000-01-21 Nippon Steel Corp Electrostatic chuck device
JP2000277598A (en) * 1999-03-25 2000-10-06 Ibiden Co Ltd Electrostatic chuck and its manufacture
JP2001035817A (en) * 1999-07-22 2001-02-09 Toshiba Corp Method of dividing wafer and manufacture of semiconductor device
JP2001118664A (en) * 1999-08-09 2001-04-27 Ibiden Co Ltd Ceramic heater
TW473792B (en) * 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP3228924B2 (en) * 2000-01-21 2001-11-12 イビデン株式会社 Ceramic heater for semiconductor manufacturing and inspection equipment
JP2001244320A (en) * 2000-02-25 2001-09-07 Ibiden Co Ltd Ceramic substrate and manufacturing method therefor
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
KR20040030803A (en) * 2001-07-19 2004-04-09 이비덴 가부시키가이샤 Ceramic connection body, method of connecting the ceramic bodies, and ceramic structural body
JP2003224180A (en) * 2002-01-28 2003-08-08 Kyocera Corp Wafer support member
JP4189373B2 (en) * 2003-10-31 2008-12-03 株式会社トクヤマ Aluminum nitride joined body and manufacturing method thereof
TWI267940B (en) * 2004-06-28 2006-12-01 Kyocera Corp Electrostatic chuck
JP2007088411A (en) * 2005-06-28 2007-04-05 Hitachi High-Technologies Corp Electrostatic attraction device, wafer processing apparatus and plasma processing method
US7672110B2 (en) * 2005-08-29 2010-03-02 Applied Materials, Inc. Electrostatic chuck having textured contact surface
US7869184B2 (en) * 2005-11-30 2011-01-11 Lam Research Corporation Method of determining a target mesa configuration of an electrostatic chuck
KR101332206B1 (en) * 2005-12-02 2013-11-25 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. Semiconductor processing
US7646581B2 (en) * 2006-01-31 2010-01-12 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck
JP4936925B2 (en) * 2006-03-03 2012-05-23 日本碍子株式会社 Blasting method
US7589950B2 (en) * 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP2008160093A (en) * 2006-11-29 2008-07-10 Toto Ltd Electrostatic chuck and manufacturing method thereof, and substrate-treating device
JP5116330B2 (en) * 2007-03-26 2013-01-09 株式会社東京精密 Electrolytic processing unit device and electrolytic processing cleaning and drying method
JP2009060035A (en) * 2007-09-03 2009-03-19 Shinko Electric Ind Co Ltd Electrostatic chuck member, its manufacturing method, and electrostatic chuck apparatus
JP2009081223A (en) * 2007-09-26 2009-04-16 Tokyo Electron Ltd Electrostatic chuck member
TWI475594B (en) * 2008-05-19 2015-03-01 Entegris Inc Electrostatic chuck
DE112009002400T5 (en) * 2008-10-07 2012-01-19 Ulvac, Inc. Method for handling a substrate
JP4761334B2 (en) * 2009-02-23 2011-08-31 株式会社ソディック Colored ceramic vacuum chuck and manufacturing method thereof
JP5510411B2 (en) * 2010-08-11 2014-06-04 Toto株式会社 Electrostatic chuck and method for manufacturing electrostatic chuck

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW472500B (en) * 1999-08-12 2002-01-11 Ibiden Co Ltd Ceramic substrate, ceramic heater, electrostatic chuck and wafer probe for semiconductor manufacturing and checking device
TW527264B (en) * 2001-06-28 2003-04-11 Lam Res Corp Ceramic electrostatic chuck assembly and method of making
TW200423250A (en) * 2003-02-03 2004-11-01 Octec Inc Plasma processing device, electrode plate for the same, and manufacturing method for electrode plate
US20050276928A1 (en) * 2003-02-03 2005-12-15 Octec Inc. Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
TWI247646B (en) * 2003-10-29 2006-01-21 Taiwan Semiconductor Mfg Disassembling device
TW200715357A (en) * 2005-07-21 2007-04-16 Sumitomo Heavy Industries Stage device

Also Published As

Publication number Publication date
KR101316804B1 (en) 2013-10-11
CN102265390A (en) 2011-11-30
SG171819A1 (en) 2011-07-28
RU2011130815A (en) 2013-01-27
WO2010073514A1 (en) 2010-07-01
RU2486631C2 (en) 2013-06-27
JP5188584B2 (en) 2013-04-24
US20110256810A1 (en) 2011-10-20
DE112009003808T5 (en) 2012-06-06
KR20110107796A (en) 2011-10-04
JPWO2010073514A1 (en) 2012-06-07
TW201032943A (en) 2010-09-16
CN102265390B (en) 2014-10-15

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