CN1925108A - Gas dispersion plate and manufacturing method therefor - Google Patents
Gas dispersion plate and manufacturing method therefor Download PDFInfo
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- CN1925108A CN1925108A CN 200610115977 CN200610115977A CN1925108A CN 1925108 A CN1925108 A CN 1925108A CN 200610115977 CN200610115977 CN 200610115977 CN 200610115977 A CN200610115977 A CN 200610115977A CN 1925108 A CN1925108 A CN 1925108A
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Abstract
To provide an inexpensive gas dispersion plate having a high corrosion resistance to halogen-based corrosive gasses and a plasma thereof, and capable of preventing particle generation from the gas hole, thereby contributing to an improvement in the production yield of the semiconductor devices. The gas dispersion plate includes one or plural gas holes in a base material formed by a Y2O3 ceramic material having a relative density of 96% or more, in which an edge part of the gas hole is formed by a sand blasting process into a rounded shape with a radius of curvature of 0.2 mm or more.
Description
Technical field
The present invention relates to gas dispersion plate and manufacture method thereof, relate more specifically to make the marginal portion of pore form circular gas dispersion plate and manufacture method thereof, also relate to by clamp for machining (working jig) is applied gas dispersion plate and the manufacture method thereof that ultrasonic vibration forms pore by blasting treatment.
Background technology
In semiconductor-fabricating device such as Etaching device,, will spray plate and be set directly on the wafer in order to disperse reactant gas equably.
This spray plate usually with anodised aluminium system respectively.But,, for example come the aluminum pollution of blowing plate and become more and more significant because of peeling off of anode oxide film forms particle variety of issues such as (dust) along with the raising of plasma density.
For fear of these shortcomings, attempted for example by used for hot spraying such as aluminium oxide or Y
2O
3Surface (referring to Japanese patent unexamined communique JP-A-2000-315680) etc. corrosion resistance material coating spray plate.But, because the bonding strength of thermal spray membrane is not enough or because the difference of thermal expansion in use runs into the problem that thermal spray membrane peels off through regular meeting around the spray orifice.In addition, also exist because of cleaning the problem that causes the film adhesive strength deteriorates repeatedly.
Therefore, recently with aluminium oxide or Y
2O
3Sintered component by in conjunction with or join to by being threaded on the surface of spray plate.
But,, can not eliminate the particle of blowing plate fully even have in the spray plate of highly corrosion resistant material in this combination or joint.This particle is owing to combination or is bonded on ceramic material (aluminium oxide or the Y that sprays on the plate
2O
3) come off or be deposited on the product of spray on the plate and flake off on the wafer that is positioned at its below and produce.
In addition, because Y
2O
3Sintered component has high plasma-resistance, so Y
2O
3Sintered component also is used (referring to Japanese patent unexamined communique JP-A-2003-234300) recently.
But aluminium or aluminium oxide have low plasma-resistance, and easily produce particle when being exposed in the plasma.At thermal spraying position, Y
2O
3Thermal spraying make the generation can suppress particle to a certain extent.But Y is carried out in the pore inside (inner surface) that is approximately 1mm at diameter
2O
3Thermal spraying have technical difficulty.Though and fluffy Y
2O
3Material has better plasma-resistance in thermal spraying, but it can produce particle because of formed scratch and crushing layer in the pore-forming.
Summary of the invention
The inventor is through further investigation, found that, by in conjunction with or be bonded on the marginal portion that particle that the ceramic material of spray on the plate produce mainly comes from pore (pore of spray plate), and the bonding strength of product is subjected to the surface roughness of the part that product deposits and the influence of shape, has therefore made the present invention.
More specifically, such as aluminium oxide or Y
2O
3On pottery is friable material, and sintered component comprise crushing layer through finished surface.The marginal portion of pore comprises the particle that much will come off, and in use fails can be shed on the wafer by the particle that cleaning is removed.Also once attempted eliminating the marginal portion with chamfered, still, to each the spray plate on existing hundreds and thousands of holes handle separately cost and time-consuming on be unpractical.
As for the bonding strength of product film, more coarse surface can produce bigger fixation to base material in the base material deposited position, thereby demonstrates peeling off still less.
In addition, the bonding strength that is deposited on the product film of pore marginal portion increases in the following order: do not have chamfering＜have chamfering＜circular chamfering, find that therefore the circle that does not have corner part or ridge is effective.
The film that is deposited on turning or bump does not have bonding strength, and is easy to peel off.In the situation on the surface of not passing through chamfered, having the particle that much will come off also is granuloplastic factor.
The present invention is intended to solve these problems with low cost.More specifically, use blasting treatment, carry out circular chamfered in the marginal portion of pore simultaneously near pore, to form coarse surface.The marginal portion of gained spray plate presents the circle that does not have turning or protuberance, and owing to demonstrates strong adhesiveness by the formed rough surface of blasting treatment.And, because there be not turning or the sharp-pointed part that electrostatic charge is easy to accumulate, make and can avoid the damage that causes because of electric arc once in a while pottery.What this spray plate made it possible to prevent in the prior art and run into produces particle by pore, and helps to improve yield of semiconductor devices.
Consider said circumstances and made the present invention, its objective is provides a kind of cheap gas dispersion plate, this gas dispersion plate has highly corrosion resistant to halogen corrosive gas and plasma thereof and can stop by pore and generates particle, thereby helps to improve yield of semiconductor devices.
Another object of the present invention provides a kind of manufacture method of gas dispersion plate, this gas dispersion plate has highly corrosion resistant to halogen corrosive gas and plasma thereof, and can stop by pore to generate particle, thereby help to improve yield of semiconductor devices.
For achieving the above object, according to an aspect of the present invention, provide a kind of base material and one or more gas dispersion plate that is arranged in the pore of described base material of comprising, described base material contains relative density more than or equal to 96% Y
2O
3Pottery,
Wherein, the marginal portion with described pore forms the circle of radius of curvature more than or equal to 0.2mm by blasting treatment.
According to an aspect of the present invention, provide a kind of manufacture method of gas dispersion plate, this method may further comprise the steps:
To Y
2O
3Add entry and adhesive in the raw material to obtain slurry;
With spray dryer described slurry is formed pellet;
With the pellet extrusion forming of gained to obtain shaped component;
Calcine described shaped component to evaporate described adhesive;
The described shaped component of sintering is to obtain relative density more than or equal to 96% Y
2O
3The ceramic post sintering member;
On described sintered component, form one or more pores; With
Blasting treatment is carried out to form circle in the marginal portion of described pore.
According to an aspect of the present invention, provide a kind of gas dispersion plate, this gas dispersion plate comprises:
Comprise purity more than or equal to 99% Y
2O
3The base material of pottery;
Be formed on the one or more pores in the described base material,
Wherein with described base material in hydrogen atmosphere 1780 ℃ to 1820 ℃ sintering temperature and
When being applied ultrasonic vibration, clamp for machining forms described pore.
According to an aspect of the present invention, provide a kind of manufacture method of gas dispersion plate, this method may further comprise the steps:
To purity more than or equal to 99% Y
2O
3Add entry and adhesive in the raw material to obtain slurry;
With spray dryer described slurry is formed pellet;
With the pellet extrusion forming of gained to obtain shaped component;
Calcine described shaped component to evaporate described adhesive;
In hydrogen atmosphere at the described shaped component of 1780 ℃ to 1820 ℃ sintering temperature to obtain Y
2O
3The ceramic post sintering member; With
By clamp for machining is applied ultrasonic vibration, in described sintered component, form one or more pores.
The present invention can provide a kind of cheap gas dispersion plate, and this gas dispersion plate has highly corrosion resistant to halogen corrosive gas and plasma thereof and can stop by pore and generates particle, thereby helps to improve yield of semiconductor devices.
The present invention can also provide a kind of manufacture method of gas dispersion plate, and described gas dispersion plate has highly corrosion resistant to halogen corrosive gas and plasma thereof and can stop by pore and generates particle, thereby helps to improve yield of semiconductor devices.
Description of drawings
Fig. 1 is the perspective view of the embodiment of gas dispersion plate of the present invention;
Fig. 2 is the longitdinal cross-section diagram of the embodiment of gas dispersion plate of the present invention;
Fig. 3 is the schematic diagram that utilizes the Etaching device of gas dispersion plate of the present invention.
Embodiment
Come the embodiment of gas dispersion plate of the present invention is described below with reference to accompanying drawing.
Fig. 1 is the perspective view of gas dispersion plate of the present invention, and Fig. 2 is its longitdinal cross-section diagram.
As depicted in figs. 1 and 2, the gas dispersion plate 1 that constitutes the spray plate by relative density more than or equal to 96% Y
2O
3Have one or more pores 3 in the base material 2 that ceramic material forms, and the marginal portion 4 of pore 3 forms the circle of radius of curvature more than or equal to 0.2mm by blasting treatment.
Select for use relative density more than or equal to 96% Y
2O
3, this is because because the increase of boring ratio example, lower density can cause badly damagedly because of blasting treatment, thereby is easier to produce particle.In addition, radius of curvature is invalid less than the circle of 0.2mm for the bonding strength of film.
This embodiment has realized a kind of cheap gas dispersion plate, in the process of semiconductor wafer being carried out the skin covering of the surface processing, is exposed to such as CCl even work as the gas dispersion plate
4, BCl
3, HBr, CF
4, C
4F
8, NF
3Perhaps SF
6Plasma gas, highly corrosive self-cleaning property ClF etc. halogen compounds
3Gas or utilize N
2Or O
2Strong sputter plasma in the time because by relative density more than or equal to 96% Y
2O
3The base material itself that material constitutes can prevent the etching to base material, also can prevent of the etching of the interior static discharge of pore to base material, and can improve the corrosion resistance on pore surface, and because the marginal portion of pore is formed the circle of radius of curvature more than or equal to 0.2mm by blasting treatment, therefore described gas dispersion plate can prevent coming off of pore marginal portion, and can prevent to produce particle, thereby help to improve yield of semiconductor devices by pore.In addition, this circle can be avoided because of the come off generation of the particle that causes of marginal portion with low cost.
The gas dispersion plate of the present embodiment can be produced by the following method.
To Y
2O
3Add entry and adhesive in the raw material to obtain slurry, with spray dryer described slurry is formed pellet, the pellet extrusion forming of gained to obtain shaped component, is calcined described shaped component evaporating described adhesive, and the described shaped component of sintering is to obtain relative density more than or equal to 96% Y
2O
3The ceramic post sintering member forms one or more pores on described sintered component, and carries out blasting treatment and form circle with the marginal portion with pore, thus the gas dispersion plate of preparation the present embodiment.
The manufacture method of the present embodiment can access a kind of gas dispersion plate, and this gas dispersion plate has highly corrosion resistant to halogen corrosive gas and plasma thereof and can stop by pore and generates particle, thereby helps to improve yield of semiconductor devices.
Embodiment
To purity 99.9% Y
2O
3Add ion exchange water and adhesive in the raw material to obtain slurry, described slurry is formed pellet with spray dryer.At 1500kgf/cm
2Pressure under the pellet of gained is carried out moulding to obtain base material.After removing adhesive by calcining, with its in hydrogen atmosphere 1800 ℃ carry out sintering with obtain relative density more than or equal to 96%, be of a size of the sintered component of 320mm (diameter) * 3mm (thickness).In described sintered component, 300 spray orifices (embodiment 1-1 to 1-5, and comparative example 1-1 to 1-4) that diameter is 0.5mm have been formed.In addition, by changing briquetting pressure and sintering temperature, also obtained relative density and be 95% sintered component, and handled (comparative example 1-5,1-6) similarly.
On embodiment 1-1 to 1-5 and comparative example 1-1 to 1-6, form edge shape with the processing method shown in the table 1.
Under the expulsion pressure of 0.3MPa, carry out sandblast with GC#240.Each sample of gained combination like this so that pore is positioned at suitable position, is installed in the chamber of the Etaching device that is used for the 300mm wafer as shown in Figure 3 as the spray plate, and particle is estimated.Y
2O
3The density of sintered component is measured with Archimedes (Archimedes) method.Obtain granule number with laser particle counter by the particle of measuring on the 300mm wafer (more than or equal to 0.2 μ m).
Gained the results are shown in Table 1.
Table 1
| Sample | Relative density (%) | Processing method | The marginal portion shape | Granule number (individual/the 300mm wafer) |
| Comparative example 1-1 | 98 | Grind | Sharpened edge | 22 |
| Comparative example 1-2 | 98 | Grind | C0.5 | 15 |
| Comparative example 1-3 | 98 | Grind | R0.5 | 10 |
| Embodiment 1-1 | 98 | Sandblast | R0.5 | 3 |
| Embodiment 1-2 | 98 | Sandblast | R0.8 | 5 |
| Embodiment 1-3 | 98 | Sandblast | R1.0 | 5 |
| Embodiment 1-4 | 98 | Sandblast | R0.2 | 6 |
| Comparative example 1-4 | 98 | Sandblast | R0.1 | 11 |
| Embodiment 1-5 | 96 | Sandblast | R0.5 | 5 |
| Comparative example 1-5 | 95 | Sandblast | R0.3 | 25 |
| Comparative example 1-6 | 95 | Sandblast | R0.5 | 20 |
As can be seen from Table 1, (relative density is more than or equal to 96% to meet condition of the present invention, blasting treatment, radius of curvature is more than or equal to the circle of 0.2mm) and the embodiment 1-1 that is shaped as R0.5mm (radius of curvature that Rxx mm is illustrated in circular place is xx mm) demonstrate minimum granule number, its granule number is 3.In addition, meet the embodiment 1-2, the 1-3 that have R0.8mm, R1.0mm and R0.2mm respectively of condition of the present invention and 1-4 and demonstrated and be less than or equal to 6 granule number, be only second to embodiment 1-1 minimum.And the relative density that meets condition of the present invention is 96% embodiment 1-5 demonstrate little of 5 granule number.
On the other hand, the comparative example 1-1 that adopts polishing, has the sharpened edge part thereby do not meet condition of the present invention has demonstrated high granule number, and its granule number is 22, is more than 7 times of granule number of embodiment 1-1.And the comparative example 1-2 that adopts the marginal portion that also has C0.5mm of polishing thereby do not meet condition of the present invention has demonstrated the granule number up to 5 times of the granule numbers of sample 1-1, and its granule number is 15.The granule number that the comparative example 1-3 that does not meet condition of the present invention of employing Ginding process demonstrates is 10, is more than 3 times of granule number of embodiment 1-1.The granule number that the comparative example 1-4 that is shaped as the R0.1mm that does not meet condition of the present invention of marginal portion demonstrates is 11, is more than 3 times of granule number of embodiment 1-1.The comparative example 1-5 that has the relative density that is different from condition of the present invention but have a R0.3mm in condition of the present invention has demonstrated high granule number, and its granule number is 25, is more than 8 times of granule number of embodiment 1-1.The comparative example 1-6 that has the relative density that is different from condition of the present invention but have a R0.5mm in condition of the present invention has demonstrated high granule number, and its granule number is 20, is more than 6 times of granule number of embodiment 1-1.
Describe below with reference to above-mentioned identical accompanying drawing another embodiment gas dispersion plate of the present invention.
As depicted in figs. 1 and 2, constitute the gas dispersion plate 1 of spray plate at Y
2O
3Have one or more pores 3 in the ceramic base material 2, described Y
2O
3Ceramic base material 2 is by with 1780 ℃ to 1820 ℃ temperature, and sintering purity is more than or equal to 99% Y under hydrogen atmosphere
2O
3Raw material and forming, wherein said pore 3 applies ultrasonic vibration to clamp for machining and forms in pore forming process.
In Etaching device as shown in Figure 3, in the process of semiconductor wafer being carried out the skin covering of the surface processing, be exposed to such as CCl even work as the gas dispersion plate
4, BCl
3, HBr, CF
4, C
4F
8, NF
3Perhaps SF
6Plasma gas, highly corrosive self-cleaning property ClF etc. halogen compounds
3Gas or utilize N
2Or O
2Strong sputter plasma in the time because by purity more than or equal to 99% Y
2O
3By the base material itself that in hydrogen atmosphere, obtains halogen corrosive gas and plasma thereof had highly corrosion resistant at 1780 ℃ to 1820 ℃ sintering temperature, and formation because of crushing layer in formation that has suppressed the pore scratch and the processing, the gas dispersion plate of present embodiment also can stop by pore generation particle, thereby helps to improve yield of semiconductor devices.
The gas dispersion plate of the present embodiment can be by following method production.
To purity more than or equal to 99% Y
2O
3Add entry and adhesive in the raw material to obtain slurry, described slurry is formed pellet, the pellet extrusion forming of gained to obtain shaped component, is calcined described shaped component with the evaporation adhesive with spray dryer; In hydrogen atmosphere at the described shaped component of 1780 ℃ to 1820 ℃ sintering temperature to obtain Y
2O
3The ceramic post sintering member; And in described sintered component, form one or more pores by clamp for machining is applied ultrasonic vibration, thereby the gas dispersion plate of preparation the present embodiment.
Material purity is lower than 99% can reduce plasma-resistance.In addition,, for example in air, carry out the purity that sintering can reduce sintered component, thereby reduce plasma-resistance at non-hydrogen atmosphere.And the ultrasonic vibration that puts on the clamp for machining (for example instrument) that is used to form pore makes it possible to suppress formed scratch and crushing layer in the processing.
The manufacture method of the present embodiment makes it possible to obtain a kind of gas dispersion plate, this gas dispersion plate has highly corrosion resistant for halogen corrosive gas and plasma thereof, and can stop, thereby help to improve yield of semiconductor devices by pore generation particle.
Embodiment:
The spray plate is pressed the condition production shown in the table 2, is installed in as shown in Figure 3 in the Etaching device, then in the etching of semiconductor wafer, utilizes laser particle counter by counting particle is tested and assessed being deposited on particle on the wafer.
Gained the results are shown in Table 2
Table 2
| Sample | Material purity (%) | Sintering atmosphere | Sintering temperature (℃) | Ultrasonic vibration | Particle (counting) |
| Embodiment 2-1 | 99.5 | Hydrogen | 1800 | Use | 8 |
| Comparative example 2-1 | 98 | Hydrogen | 1800 | Use | 50 |
| Comparative example 2-2 | 99.5 | Hydrogen | 1750 | Use | 25 |
| Comparative example 2-3 | 99.5 | Air | 1700 | Use | 70 |
| Comparative example 2-4 | 99.5 | Hydrogen | 1800 | Do not use | 45 |
Can find out that from table 2 (material purity is more than or equal to 99% Y to meet condition of the present invention
2O
3, in hydrogen atmosphere, apply ultrasonic vibration at 1780 ℃ to 1820 ℃ sintering temperature and to clamp for machining) the granule number that demonstrates of embodiment 2-1 less to having only 8.
On the other hand, material purity is 98% and not meet the granule number that the comparative example 2-1 of material purity condition demonstrates high, and its granule number is 50, is more than 6 times of granule number of embodiment 2-1.And using 1750 sintering temperature and not meeting the granule number that the comparative example 2-2 of temperature conditions demonstrates is 25, is more than 3 times of granule number of embodiment 2-1.Carry out sintering and do not meet the granule number that the comparative example 2-3 of sintering atmosphere condition demonstrates high in air, its granule number is 70, is more than 8 times of granule number of embodiment 2-1.Do not use ultrasonic vibration and do not meet the granule number that the comparative example 2-4 of vibration condition demonstrates high, its granule number is 45, is more than 5 times of granule number of embodiment 2-1.
Although be illustrated in conjunction with the preferred embodiments of the invention, but to those skilled in the art, it is evident that, can carry out various changes and modifications not deviating from the basis of the present invention, therefore, in claims, be intended to contain all such changes and improvements that fall within the essential spirit and scope of the present invention.
Claims (4)
1. gas dispersion plate, this gas dispersion plate comprises base material and one or more pore that is arranged in described base material, and described base material comprises relative density more than or equal to 96% Y
2O
3Pottery,
Wherein, the marginal portion with described pore forms the circle of radius of curvature more than or equal to 0.2mm by blasting treatment.
2. the manufacture method of a gas dispersion plate, this method may further comprise the steps:
To Y
2O
3Add entry and adhesive in the raw material to obtain slurry;
With spray dryer described slurry is formed pellet;
With the pellet extrusion forming of gained to obtain shaped component;
Calcine described shaped component to evaporate described adhesive;
The described shaped component of sintering is to obtain relative density more than or equal to 96% Y
2O
3The ceramic post sintering member;
On described sintered component, form one or more pores; With
Blasting treatment is carried out to form circle in the marginal portion of described pore.
3. gas dispersion plate, this gas dispersion plate comprises:
Comprise purity more than or equal to 99% Y
2O
3The base material of pottery;
Be formed on the one or more pores in the described base material,
Wherein with described base material in hydrogen atmosphere 1780 ℃ to 1820 ℃ sintering temperature and
When being applied ultrasonic vibration, clamp for machining forms described pore.
4. the manufacture method of a gas dispersion plate, this method may further comprise the steps:
To purity more than or equal to 99% Y
2O
3Add entry and adhesive in the raw material to obtain slurry;
With spray dryer described slurry is formed pellet;
With the pellet extrusion forming of gained to obtain shaped component;
Calcine described shaped component to evaporate described adhesive;
In hydrogen atmosphere at the described shaped component of 1780 ℃ to 1820 ℃ sintering temperature to obtain Y
2O
3The ceramic post sintering member; With
By clamp for machining is applied ultrasonic vibration, in described sintered component, form one or more pores.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005252797A JP2007067242A (en) | 2005-08-31 | 2005-08-31 | Gas variance plate and its manufacturing method |
| JP2005252797 | 2005-08-31 | ||
| JP2005262627 | 2005-09-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1925108A true CN1925108A (en) | 2007-03-07 |
Family
ID=37817676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610115977 Pending CN1925108A (en) | 2005-08-31 | 2006-08-22 | Gas dispersion plate and manufacturing method therefor |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2007067242A (en) |
| CN (1) | CN1925108A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308771B (en) * | 2007-03-21 | 2010-06-23 | 应用材料公司 | Gas flow diffuser |
| CN102347259A (en) * | 2011-10-10 | 2012-02-08 | 北京七星华创电子股份有限公司 | Super clean microenvironment device |
| TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
| CN109360779A (en) * | 2018-11-13 | 2019-02-19 | 深圳市华星光电半导体显示技术有限公司 | The top electrode and its manufacturing method of dry etching equipment |
| CN115410892A (en) * | 2022-07-22 | 2022-11-29 | 合肥微睿光电科技有限公司 | Upper electrode, gas diffuser and vacuum chamber |
-
2005
- 2005-08-31 JP JP2005252797A patent/JP2007067242A/en active Pending
-
2006
- 2006-08-22 CN CN 200610115977 patent/CN1925108A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308771B (en) * | 2007-03-21 | 2010-06-23 | 应用材料公司 | Gas flow diffuser |
| CN102347259A (en) * | 2011-10-10 | 2012-02-08 | 北京七星华创电子股份有限公司 | Super clean microenvironment device |
| TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
| CN109360779A (en) * | 2018-11-13 | 2019-02-19 | 深圳市华星光电半导体显示技术有限公司 | The top electrode and its manufacturing method of dry etching equipment |
| CN115410892A (en) * | 2022-07-22 | 2022-11-29 | 合肥微睿光电科技有限公司 | Upper electrode, gas diffuser and vacuum chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007067242A (en) | 2007-03-15 |
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