JP5116251B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5116251B2
JP5116251B2 JP2006116965A JP2006116965A JP5116251B2 JP 5116251 B2 JP5116251 B2 JP 5116251B2 JP 2006116965 A JP2006116965 A JP 2006116965A JP 2006116965 A JP2006116965 A JP 2006116965A JP 5116251 B2 JP5116251 B2 JP 5116251B2
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Japan
Prior art keywords
layer
droplet discharge
discharge method
liquid repellent
semiconductor layer
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Expired - Fee Related
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JP2006116965A
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Japanese (ja)
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JP2006352087A5 (enExample
JP2006352087A (ja
Inventor
篤志 広瀬
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2006116965A 2005-05-20 2006-04-20 半導体装置の作製方法 Expired - Fee Related JP5116251B2 (ja)

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JP2006116965A JP5116251B2 (ja) 2005-05-20 2006-04-20 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005147660 2005-05-20
JP2005147660 2005-05-20
JP2006116965A JP5116251B2 (ja) 2005-05-20 2006-04-20 半導体装置の作製方法

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JP2006352087A JP2006352087A (ja) 2006-12-28
JP2006352087A5 JP2006352087A5 (enExample) 2009-03-26
JP5116251B2 true JP5116251B2 (ja) 2013-01-09

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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5111758B2 (ja) * 2005-12-19 2013-01-09 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
JP2008176095A (ja) * 2007-01-19 2008-07-31 Semiconductor Energy Lab Co Ltd パターン形成方法及び薄膜トランジスタの作製方法
WO2008155086A1 (de) * 2007-06-18 2008-12-24 Microgan Gmbh Halbleiterbauelement mit ringförmig geschlossener kontaktierung
JP2009200315A (ja) * 2008-02-22 2009-09-03 Hitachi Ltd 半導体装置の製造方法
US8043976B2 (en) * 2008-03-24 2011-10-25 Air Products And Chemicals, Inc. Adhesion to copper and copper electromigration resistance
TWI512997B (zh) * 2009-09-24 2015-12-11 Semiconductor Energy Lab 半導體裝置，電源電路，和半導體裝置的製造方法
CN116343705B (zh) * 2009-10-16 2025-08-26 株式会社半导体能源研究所 显示设备
KR101801540B1 (ko) * 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
KR101293261B1 (ko) 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
WO2011068025A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR101773641B1 (ko) * 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101600879B1 (ko) * 2010-03-16 2016-03-09 삼성디스플레이 주식회사 박막트랜지스터, 그 제조방법 및 박막트랜지스터를 이용한 표시기판
CN103137701B (zh) 2011-11-30 2018-01-19 株式会社半导体能源研究所 晶体管及半导体装置
KR102101167B1 (ko) * 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9362417B2 (en) * 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6175244B2 (ja) * 2012-02-09 2017-08-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9293544B2 (en) * 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
KR102522133B1 (ko) 2013-06-27 2023-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9722090B2 (en) * 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
KR102604006B1 (ko) * 2018-08-14 2023-11-21 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 그 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003058077A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP2003249656A (ja) * 2002-02-22 2003-09-05 Canon Inc 有機薄膜トランジスタ素子とその製造方法
JP4615197B2 (ja) * 2002-08-30 2011-01-19 シャープ株式会社 Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法
JP2005084416A (ja) * 2003-09-09 2005-03-31 Sharp Corp アクティブマトリクス基板およびそれを用いた表示装置
JP4622630B2 (ja) * 2005-03-31 2011-02-02 凸版印刷株式会社 薄膜トランジスタの製造方法

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