JP5107460B2 - 集積低漏洩ショットキーダイオード - Google Patents
集積低漏洩ショットキーダイオード Download PDFInfo
- Publication number
- JP5107460B2 JP5107460B2 JP2011506446A JP2011506446A JP5107460B2 JP 5107460 B2 JP5107460 B2 JP 5107460B2 JP 2011506446 A JP2011506446 A JP 2011506446A JP 2011506446 A JP2011506446 A JP 2011506446A JP 5107460 B2 JP5107460 B2 JP 5107460B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- anode
- cathode
- metal part
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims description 78
- 239000002184 metal Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 18
- 230000003071 parasitic effect Effects 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910021332 silicide Inorganic materials 0.000 description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 23
- 238000000034 method Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Claims (17)
- 基板の表面に形成されかつアノード及びカソードを有するダイオードであって、
前記アノードまたは前記カソードと接続されているショットキーバリア接合の金属部(34)と、
前記金属部に近接している一方の側部を有し、前記金属部に電気的に接続されている電極を有する絶縁ゲート(32)と、
前記金属部及び前記絶縁ゲートの下にある第1の導電タイプの第1の層(50)と、を含み、
前記第1の導電タイプの第1の層(50)は、
前記絶縁ゲートの下にありかつ前記基板の内部から前記基板の前記表面に向かう方向において凹んでいる凹形状を有する導電チャンネル(56)と、
前記金属部が前記アノードに接続されている場合には前記導電チャンネルの前記凹形状の端部から前記カソードまで伸張し、前記金属部が前記カソードに接続されている場合には前記導電チャンネルの前記凹形状の端部から前記アノードまで伸張しているドリフト領域と、
を含むことを特徴とするダイオード。 - 請求項1に記載のダイオードであって、前記第1の層の下に前記第1の層に接している第2の導電タイプの第2の層(52)をさらに含むことを特徴とするダイオード。
- 請求項2に記載のダイオードであって、前記第1の層及び前記第2の層がリサーフ(RESURF)構造を形成していることを特徴とするダイオード。
- 請求項1に記載のダイオードであって、前記金属部及び前記第1の層に接して前記第2の導電タイプの第1の領域(48)をさらに含むことを特徴とするダイオード。
- 請求項4に記載のダイオードであって、前記第1の領域に接している前記第2の導電タイプのウェル(46)をさらに含むことを特徴とするダイオード。
- 請求項5に記載のダイオードであって、前記ウェル及び前記第2の層に接している第1の導電タイプの第2の領域(20)をさらに含むことを特徴とするダイオード。
- 請求項6に記載のダイオードであって、前記第2の領域の下に前記第2の領域に接している第1の導電タイプの分離領域(16)をさらに含み、前記分離領域が前記金属部に電気的に接続されていることを特徴とするダイオード。
- 請求項2に記載のダイオードであって、前記第1の層及び前記第2の層が前記ゲートの下に凹状導電チャンネルを形成していることを特徴とするダイオード。
- 請求項7に記載のダイオードであって、前記分離領域、前記第2の領域、前記第2の層、及び前記第1の層が前記アノードから前記カソードまで電流を伝導する寄生バイポーラトランジスタを形成することを特徴とするダイオード。
- 請求項1に記載のダイオードであって、前記ゲートがパンチスルーMOSFETのゲートであることを特徴とするダイオード。
- 基板の表面に形成されかつアノード及びカソードを有するダイオードであって、
前記アノードと接続されているショットキーバリア接合の金属部と、
前記金属部に近接している一方の側部を有し、前記アノードに電気的に接続されている電極を有し、かつ前記金属部と前記カソードとの間に配されている絶縁ゲートと、
前記絶縁ゲートの下にありかつ前記基板の内部から前記基板の前記表面に向かう方向において凹んでいる凹形状を有する導電チャンネル(56)及び前記導電チャンネルの前記凹形状の端部から前記カソードまで伸張しているドリフト領域を含み、前記金属部及び絶縁ゲートの下にあり、かつ前記カソードと接している第1の導電タイプの第1の層と、
前記第1の導電タイプと逆の第2の導電タイプであり、互いに接続されかつ前記アノードに接続されている複数の領域であって、当該領域の少なくとも1つが前記第1の層と接している複数の領域と、
前記アノードに接続されておりかつ前記複数の領域の少なくとも1つと接している前記第1の導電タイプの第2の層と、を含み
前記第2の層は寄生NPNトランジスタのコレクタを形成し、前記複数の領域の前記少なくとも1つが寄生NPNトランジスタのベースを形成し、前記第1の層が寄生NPNトランジスタのエミッタを形成していることを特徴とするダイオード。 - 基板の表面に形成されかつアノード及びカソードを有するダイオードであって、
前記アノードまたは前記カソードと接続されているショットキーバリア接合の金属部と、
段差ゲート酸化膜を有し、前記金属部に近接して一方の側部を有しかつ前記金属部に電気的に接続されている電極を有する絶縁ゲートと、
前記金属部及び前記絶縁ゲートの下にある第1の導電タイプの第1の層と、を含み、
前記第1の導電タイプの第1の層は、
前記絶縁ゲートの下にありかつ前記基板の内部から前記基板の前記表面に向かう方向において凹んでいる凹形状を有する導電チャンネル(56)と、
前記金属部が前記アノードに接続されている場合には前記導電チャンネルの前記凹形状の端部から前記カソードまで伸張し、前記金属部がカソードに接続されている場合には前記導電チャンネルの前記凹形状の端部から前記アノードまで伸張しているドリフト領域(50)と、を含むことを特徴とするダイオード。 - 基板の表面に形成されかつアノード及びカソードを有するダイオードの製造方法であって、
前記アノードまたは前記カソードに接続されるショットキーバリア接合の金属部を形成するステップと、
前記金属部に近接する一方の側部を有しかつ前記金属部に電気的に接続される電極を有する絶縁ゲートを形成するステップと、
前記金属部及び前記絶縁ゲートの下に第1の導電タイプの第1の層(50)を形成するステップと、含み、
前記第1の導電タイプの第1の層(50)は、
前記絶縁ゲートの下にありかつ前記基板の内部から前記基板の前記表面に向かう方向において凹んでいる凹形状を有する導電チャンネル(56)と、
前記金属部が前記アノードに接続されている場合には前記導電チャンネルの前記凹形状の端部から前記カソードまで伸張し、前記金属部が前記カソードに接続されている場合には前記導電チャンネルの前記凹形状の端部から前記アノードまで伸張しているドリフト領域と、を含むことを特徴とする製造方法。 - 請求項13に記載の製造方法であって、前記第1の層の下に前記第1の層に接して第2の導電タイプの第2の層を形成するステップをさらに含むことを特徴とする製造方法。
- 請求項14に記載の製造方法であって、前記第1の層及び前記第2の層がリサーフ構造を形成することを特徴とする製造方法。
- 請求項13に記載の製造方法であって、前記金属部及び前記第1の層に接して前記第2の導電タイプの第1の領域を形成するステップをさらに含むことを特徴とする製造方法。
- 請求項16に記載の製造方法であって、前記第1の領域に接して前記第2の導電タイプのウェルを形成するステップをさらに含むことを特徴とする製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/107,995 | 2008-04-23 | ||
US12/107,995 US7745845B2 (en) | 2008-04-23 | 2008-04-23 | Integrated low leakage schottky diode |
PCT/US2009/041480 WO2009132162A2 (en) | 2008-04-23 | 2009-04-23 | Integrated low leakage schottky diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011519167A JP2011519167A (ja) | 2011-06-30 |
JP5107460B2 true JP5107460B2 (ja) | 2012-12-26 |
Family
ID=41214127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011506446A Active JP5107460B2 (ja) | 2008-04-23 | 2009-04-23 | 集積低漏洩ショットキーダイオード |
Country Status (6)
Country | Link |
---|---|
US (2) | US7745845B2 (ja) |
JP (1) | JP5107460B2 (ja) |
KR (1) | KR101056221B1 (ja) |
CN (1) | CN102017162B (ja) |
TW (1) | TW200950104A (ja) |
WO (1) | WO2009132162A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102842596B (zh) * | 2011-06-22 | 2015-05-20 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
US8513083B2 (en) | 2011-08-26 | 2013-08-20 | Globalfoundries Inc. | Methods of forming an anode and a cathode of a substrate diode by performing angled ion implantation processes |
CN103094359B (zh) * | 2011-10-31 | 2016-05-11 | 无锡华润上华半导体有限公司 | 高压肖特基二极管及其制作方法 |
TW201336090A (zh) * | 2012-02-20 | 2013-09-01 | Formosa Microsemi Co Ltd | 掘井引流式二極體元件/組件及其製造方法 |
US9142554B2 (en) | 2012-06-29 | 2015-09-22 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
US9129990B2 (en) | 2012-06-29 | 2015-09-08 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
US9111767B2 (en) | 2012-06-29 | 2015-08-18 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
US20140001546A1 (en) | 2012-06-29 | 2014-01-02 | Hubert M. Bode | Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof |
US9275991B2 (en) * | 2013-02-13 | 2016-03-01 | Analog Devices, Inc. | Apparatus for transceiver signal isolation and voltage clamp |
JP6296535B2 (ja) * | 2013-12-09 | 2018-03-20 | ローム株式会社 | ダイオードおよびそれを含む信号出力回路 |
US9978848B2 (en) * | 2015-07-17 | 2018-05-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | UTBB FDSOI split gate devices |
KR20170059706A (ko) | 2015-11-23 | 2017-05-31 | 페어차일드코리아반도체 주식회사 | 전력 반도체 장치 |
CN107293601B (zh) * | 2016-04-12 | 2021-10-22 | 朱江 | 一种肖特基半导体装置及其制备方法 |
EP3460856B1 (en) * | 2017-09-26 | 2020-12-02 | ams AG | Schottky barrier diode with improved schottky contact for high voltages |
CN108447913B (zh) * | 2018-05-21 | 2020-09-29 | 电子科技大学 | 一种集成肖特基二极管的ldmos器件 |
TW202221926A (zh) * | 2020-11-19 | 2022-06-01 | 立錡科技股份有限公司 | 切換式電源供應電路之高壓元件及其製造方法 |
CN117276325B (zh) * | 2023-11-17 | 2024-01-23 | 壹新信通科技(成都)有限公司 | 一种太赫兹二极管结构、倍频器及电子设备 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5504362A (en) | 1992-12-22 | 1996-04-02 | International Business Machines Corporation | Electrostatic discharge protection device |
JP2919333B2 (ja) * | 1996-01-30 | 1999-07-12 | 山形日本電気株式会社 | 半導体装置の製造方法 |
KR100258436B1 (ko) | 1996-10-11 | 2000-06-01 | 김덕중 | 상보형 쌍극성 트랜지스터 및 그 제조 방법 |
US5886383A (en) | 1997-01-10 | 1999-03-23 | International Rectifier Corporation | Integrated schottky diode and mosgated device |
US6034413A (en) | 1997-02-27 | 2000-03-07 | Texas Instruments Incorporated | High speed biCMOS gate power for power MOSFETs incorporating improved injection immunity |
DE10055446B4 (de) | 1999-11-26 | 2012-08-23 | Fuji Electric Co., Ltd. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
JP4277496B2 (ja) | 2001-11-21 | 2009-06-10 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
GB0129450D0 (en) * | 2001-12-08 | 2002-01-30 | Koninkl Philips Electronics Nv | Trenched semiconductor devices and their manufacture |
JP2005191227A (ja) * | 2003-12-25 | 2005-07-14 | Sanyo Electric Co Ltd | 半導体装置 |
US7071518B2 (en) * | 2004-05-28 | 2006-07-04 | Freescale Semiconductor, Inc. | Schottky device |
JP2006049341A (ja) | 2004-07-30 | 2006-02-16 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7045830B1 (en) | 2004-12-07 | 2006-05-16 | Fairchild Semiconductor Corporation | High-voltage diodes formed in advanced power integrated circuit devices |
US7285828B2 (en) | 2005-01-12 | 2007-10-23 | Intersail Americas Inc. | Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply |
US7064407B1 (en) | 2005-02-04 | 2006-06-20 | Micrel, Inc. | JFET controlled schottky barrier diode |
JP2006295062A (ja) * | 2005-04-14 | 2006-10-26 | Rohm Co Ltd | 半導体装置 |
US7728403B2 (en) * | 2006-05-31 | 2010-06-01 | Cree Sweden Ab | Semiconductor device |
CN100474632C (zh) * | 2006-08-31 | 2009-04-01 | 上海华虹Nec电子有限公司 | 肖特基势垒二极管结构 |
-
2008
- 2008-04-23 US US12/107,995 patent/US7745845B2/en active Active
-
2009
- 2009-04-02 TW TW098111039A patent/TW200950104A/zh unknown
- 2009-04-23 WO PCT/US2009/041480 patent/WO2009132162A2/en active Application Filing
- 2009-04-23 JP JP2011506446A patent/JP5107460B2/ja active Active
- 2009-04-23 CN CN200980113919.9A patent/CN102017162B/zh not_active Expired - Fee Related
- 2009-04-23 KR KR1020107023167A patent/KR101056221B1/ko active IP Right Grant
-
2010
- 2010-05-27 US US12/788,626 patent/US7910410B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2009132162A3 (en) | 2010-02-18 |
US7910410B2 (en) | 2011-03-22 |
WO2009132162A2 (en) | 2009-10-29 |
TW200950104A (en) | 2009-12-01 |
US20090267110A1 (en) | 2009-10-29 |
US7745845B2 (en) | 2010-06-29 |
CN102017162A (zh) | 2011-04-13 |
KR101056221B1 (ko) | 2011-08-11 |
CN102017162B (zh) | 2013-06-26 |
JP2011519167A (ja) | 2011-06-30 |
KR20100120241A (ko) | 2010-11-12 |
US20100233862A1 (en) | 2010-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5107460B2 (ja) | 集積低漏洩ショットキーダイオード | |
JP5191132B2 (ja) | 半導体装置 | |
US8884360B2 (en) | Semiconductor device with improved robustness | |
CN108417614B (zh) | 半导体装置 | |
US8124983B2 (en) | Power transistor | |
JP2019071313A (ja) | 半導体装置 | |
CN111081770B (zh) | 半导体装置 | |
JP2014056942A (ja) | 電力用半導体装置 | |
CN112201690B (zh) | Mosfet晶体管 | |
US20120074459A1 (en) | Semiconductor device | |
US10490655B2 (en) | Insulated gate bipolar transistor (IGBT) with high avalanche withstand | |
KR101279203B1 (ko) | 전력 반도체 소자 | |
JP6694375B2 (ja) | 半導体装置 | |
EP3154091A1 (en) | Reverse-conducting semiconductor device | |
US8283696B2 (en) | Integrated low leakage diode | |
JP5261893B2 (ja) | トレンチ型絶縁ゲートバイポーラトランジスタ | |
CN111668212B (zh) | 半导体装置 | |
US9123557B2 (en) | Fast recovery rectifier | |
CN109564939B (zh) | 半导体装置 | |
JP2005150348A (ja) | 半導体装置 | |
US9318599B2 (en) | Power semiconductor device | |
JP2017157673A (ja) | 半導体装置 | |
JP2020039001A (ja) | 半導体装置及び半導体装置の製造方法 | |
US20240222476A1 (en) | Wide based high voltage bipolar junction transistor with buried collectors as hybrid igbt building block | |
CN115868030A (zh) | 用于电气接触区域的阻挡层 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20110401 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110412 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110809 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111108 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120110 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120405 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120412 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120510 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120517 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120606 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120613 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120705 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120828 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120925 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121003 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5107460 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151012 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |