JP5106769B2 - 金属シリケート膜形成方法および半導体装置の製造方法、コンピュータ可読記録媒体 - Google Patents
金属シリケート膜形成方法および半導体装置の製造方法、コンピュータ可読記録媒体 Download PDFInfo
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- JP5106769B2 JP5106769B2 JP2005308931A JP2005308931A JP5106769B2 JP 5106769 B2 JP5106769 B2 JP 5106769B2 JP 2005308931 A JP2005308931 A JP 2005308931A JP 2005308931 A JP2005308931 A JP 2005308931A JP 5106769 B2 JP5106769 B2 JP 5106769B2
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- film
- silicate film
- metal silicate
- silicon substrate
- vapor phase
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- 238000000034 method Methods 0.000 title claims description 34
- 229910052914 metal silicate Inorganic materials 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 37
- 229910052735 hafnium Inorganic materials 0.000 claims description 36
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 36
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 14
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 239000012808 vapor phase Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- 150000002902 organometallic compounds Chemical class 0.000 claims description 6
- 238000000354 decomposition reaction Methods 0.000 claims description 5
- 239000002052 molecular layer Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000003377 silicon compounds Chemical class 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910004129 HfSiO Inorganic materials 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- SDHZVBFDSMROJJ-UHFFFAOYSA-N CCCCO[Hf] Chemical compound CCCCO[Hf] SDHZVBFDSMROJJ-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図1は、本発明で使われるMOCVD装置20の構成を示す。
[第2の実施形態]
図7は、本発明の第2の実施形態による半導体装置60の構成を示す。
[第3の実施形態]
図8は、図1あるいは図6のMOCVD装置20を制御して、図5に示す本発明の成膜処理を実行させる制御装置80の構成を示す。
21 排気系
22 処理容器
22A 基板保持台
22a 酸素ガスライン
22b,22d MFC
22c 原料ガスライン
22e 気化器
22S シャワーヘッド
22U 紫外光源
22s 開口部
23A,23B 原料容器
40 シリコン基板
41 界面シリコン酸化膜
42,43 ハフニウムシリケート膜
60 半導体装置
61 シリコン基板
61A 素子領域
61I 素子分離領域
61a ソースエクステンション領域
61b ドレインエクステンション領域
61c ソース領域
61d ドレイン領域
62 ゲート絶縁膜
62ox 界面酸化膜
62hk ハフニウムシリケート膜
63 ゲート電極
63A ソース領域
63B ドレイン領域
80 コンピュータ
Claims (6)
- シリコン基板上への金属シリケート膜形成方法であって、
前記シリコン基板表面に、前記金属シリケート膜を構成する金属元素を含む有機金属化合物よりなる第1の気相原料と有機シリコン化合物よりなる第2の気相原料を供給し、前記シリコン基板上に金属シリケート膜を形成する第1の工程と、
前記第1の気相原料の供給を遮断し、前記金属シリケート膜の形成を中断する第2の工程と、を繰り返してなり、
前記第1の工程では、前記シリコン基板の温度を前記第1の気相原料の分解温度以上に保持し、前記金属シリケート膜を、少なくとも1分子層に相当する膜厚で形成され、
前記第1の工程は、前記金属シリケート膜が、0.5〜2nmの膜厚で形成されるように実行され、
前記第1の気相原料は、HTB(テトラターシャリブトキシハフニウム)であり、
前記第2の気相原料は、TEOS(テトラエトキシシラン)であることを特徴とする金属シリケート膜形成方法。 - 前記第2の工程では、前記シリコン基板の温度が、前記第2の気相原料の分解温度以下に保持されることを特徴とする請求項1記載の金属シリケート膜形成方法。
- 前記第1の工程は、前記シリコン基板温度を300℃以上に保持して実行されることを特徴とする請求項1または2記載の金属シリケート膜形成方法。
- 前記第2の工程は、前記シリコン基板に、不活性ガス、酸素ガス、及びオゾンガスのいずれかを供給しながら実行されることを特徴とする請求項1記載の金属シリケート膜形成方法。
- 請求項1〜4のいずれかよりなる金属シリケート膜形成方法を含むことを特徴とする半導体装置の製造方法。
- 実行されるとき、汎用コンピュータに成膜装置を制御させるソフトウェアを記録したコンピュータ可読記録媒体であって、
前記ソフトウェアは前記成膜装置に、請求項1〜4の金属シリケート膜形成方法を実行させることを特徴とするコンピュータ可読記録媒体。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005308931A JP5106769B2 (ja) | 2005-10-24 | 2005-10-24 | 金属シリケート膜形成方法および半導体装置の製造方法、コンピュータ可読記録媒体 |
PCT/JP2006/318865 WO2007049415A1 (ja) | 2005-10-24 | 2006-09-22 | 金属シリケート膜の形成方法および半導体装置の製造方法 |
TW095139226A TW200729299A (en) | 2005-10-24 | 2006-10-24 | Method of forming a metal silicate film and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
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JP2005308931A JP5106769B2 (ja) | 2005-10-24 | 2005-10-24 | 金属シリケート膜形成方法および半導体装置の製造方法、コンピュータ可読記録媒体 |
Publications (2)
Publication Number | Publication Date |
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JP2007116069A JP2007116069A (ja) | 2007-05-10 |
JP5106769B2 true JP5106769B2 (ja) | 2012-12-26 |
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JP2005308931A Expired - Fee Related JP5106769B2 (ja) | 2005-10-24 | 2005-10-24 | 金属シリケート膜形成方法および半導体装置の製造方法、コンピュータ可読記録媒体 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5106769B2 (ja) |
TW (1) | TW200729299A (ja) |
WO (1) | WO2007049415A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004104025A (ja) * | 2002-09-12 | 2004-04-02 | Fujitsu Ltd | 膜形成方法 |
JP2004281479A (ja) * | 2003-03-13 | 2004-10-07 | Rikogaku Shinkokai | 薄膜形成方法 |
JP2005079223A (ja) * | 2003-08-29 | 2005-03-24 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2005235987A (ja) * | 2004-02-19 | 2005-09-02 | Toshiba Corp | 半導体記憶装置及び半導体記憶装置の製造方法 |
JP4542807B2 (ja) * | 2004-03-31 | 2010-09-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびにゲート絶縁膜の形成方法 |
JP4784065B2 (ja) * | 2004-10-28 | 2011-09-28 | ソニー株式会社 | キャパシタおよびキャパシタの製造方法および半導体装置 |
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2005
- 2005-10-24 JP JP2005308931A patent/JP5106769B2/ja not_active Expired - Fee Related
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2006
- 2006-09-22 WO PCT/JP2006/318865 patent/WO2007049415A1/ja active Application Filing
- 2006-10-24 TW TW095139226A patent/TW200729299A/zh unknown
Also Published As
Publication number | Publication date |
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JP2007116069A (ja) | 2007-05-10 |
WO2007049415A1 (ja) | 2007-05-03 |
TW200729299A (en) | 2007-08-01 |
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