TW200729299A - Method of forming a metal silicate film and method of manufacturing semiconductor device - Google Patents

Method of forming a metal silicate film and method of manufacturing semiconductor device

Info

Publication number
TW200729299A
TW200729299A TW095139226A TW95139226A TW200729299A TW 200729299 A TW200729299 A TW 200729299A TW 095139226 A TW095139226 A TW 095139226A TW 95139226 A TW95139226 A TW 95139226A TW 200729299 A TW200729299 A TW 200729299A
Authority
TW
Taiwan
Prior art keywords
metal silicate
silicate film
vapor
forming
phase material
Prior art date
Application number
TW095139226A
Other languages
Chinese (zh)
Inventor
Shintaro Aoyama
Tsuyoshi Takahashi
Kouji Shimomura
Miki Aruga
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200729299A publication Critical patent/TW200729299A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

A method of forming a metal silicate film on a silicon substrate by using the metal organic CVD (Chemical Vapor Deposition) technique is featured with the followings: repeatedly carrying out the first step of feeding a first vapor-phase material consisting of an metal organic compound containing metal elements for constituting the metal silicate film and a second vapor-phase material consisting of an organic silicon compound onto a surface of silicon substrate; and the second step of decomposing the first vapor-phase material and the second vapor-phase material on the surface of silicon substrate to thereby form a metal silicate film. In each repetition, the metal silicate film is formed with a film thickness of 0.5 to 2 nm.
TW095139226A 2005-10-24 2006-10-24 Method of forming a metal silicate film and method of manufacturing semiconductor device TW200729299A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005308931A JP5106769B2 (en) 2005-10-24 2005-10-24 Metal silicate film forming method, semiconductor device manufacturing method, and computer-readable recording medium

Publications (1)

Publication Number Publication Date
TW200729299A true TW200729299A (en) 2007-08-01

Family

ID=37967537

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095139226A TW200729299A (en) 2005-10-24 2006-10-24 Method of forming a metal silicate film and method of manufacturing semiconductor device

Country Status (3)

Country Link
JP (1) JP5106769B2 (en)
TW (1) TW200729299A (en)
WO (1) WO2007049415A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004104025A (en) * 2002-09-12 2004-04-02 Fujitsu Ltd Method for forming film
JP2004281479A (en) * 2003-03-13 2004-10-07 Rikogaku Shinkokai Thin film forming method
JP2005079223A (en) * 2003-08-29 2005-03-24 Toshiba Corp Semiconductor device and its manufacturing method
JP2005235987A (en) * 2004-02-19 2005-09-02 Toshiba Corp Semiconductor memory and method of manufacturing the same
JP4542807B2 (en) * 2004-03-31 2010-09-15 東京エレクトロン株式会社 Film forming method and apparatus, and gate insulating film forming method
JP4784065B2 (en) * 2004-10-28 2011-09-28 ソニー株式会社 Capacitor, capacitor manufacturing method, and semiconductor device

Also Published As

Publication number Publication date
WO2007049415A1 (en) 2007-05-03
JP5106769B2 (en) 2012-12-26
JP2007116069A (en) 2007-05-10

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