JP5100686B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP5100686B2 JP5100686B2 JP2009042328A JP2009042328A JP5100686B2 JP 5100686 B2 JP5100686 B2 JP 5100686B2 JP 2009042328 A JP2009042328 A JP 2009042328A JP 2009042328 A JP2009042328 A JP 2009042328A JP 5100686 B2 JP5100686 B2 JP 5100686B2
- Authority
- JP
- Japan
- Prior art keywords
- block
- flat
- punch
- eyelet
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000003825 pressing Methods 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009042328A JP5100686B2 (ja) | 2009-02-25 | 2009-02-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009042328A JP5100686B2 (ja) | 2009-02-25 | 2009-02-25 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010199287A JP2010199287A (ja) | 2010-09-09 |
| JP2010199287A5 JP2010199287A5 (enrdf_load_stackoverflow) | 2012-03-01 |
| JP5100686B2 true JP5100686B2 (ja) | 2012-12-19 |
Family
ID=42823721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009042328A Active JP5100686B2 (ja) | 2009-02-25 | 2009-02-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5100686B2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024066173A (ja) | 2022-11-01 | 2024-05-15 | 新光電気工業株式会社 | ステム及びステムの製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2880029B2 (ja) * | 1992-11-09 | 1999-04-05 | 新光電気工業株式会社 | 半導体ステムの製造方法 |
| JP3327042B2 (ja) * | 1995-04-17 | 2002-09-24 | 松下電器産業株式会社 | 半導体レーザ装置 |
| JP4926458B2 (ja) * | 2005-11-17 | 2012-05-09 | 新光電気工業株式会社 | 光半導体素子用ステムの製造方法 |
-
2009
- 2009-02-25 JP JP2009042328A patent/JP5100686B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010199287A (ja) | 2010-09-09 |
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