JP5090079B2 - 減圧乾燥装置 - Google Patents
減圧乾燥装置 Download PDFInfo
- Publication number
- JP5090079B2 JP5090079B2 JP2007168632A JP2007168632A JP5090079B2 JP 5090079 B2 JP5090079 B2 JP 5090079B2 JP 2007168632 A JP2007168632 A JP 2007168632A JP 2007168632 A JP2007168632 A JP 2007168632A JP 5090079 B2 JP5090079 B2 JP 5090079B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- support
- exhaust
- drying apparatus
- support pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 75
- 238000001035 drying Methods 0.000 claims description 37
- 238000001291 vacuum drying Methods 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000003028 elevating effect Effects 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000010981 drying operation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Solid Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
3 パッキング
4 基部
5 ヒータ
6 排気口
7 管路
8 ダンパ
9 真空ポンプ
11 第1支持ピン
12 第1支持板
13 連結棒
14 第1昇降機構
21 第2支持ピン
22 第2支持板
23 連結棒
24 第2昇降機構
25 昇降部材
31 第2支持ピン
32 シャッター
W 基板
Claims (4)
- 基板の主面に塗布された薄膜を減圧乾燥する減圧乾燥装置において、
基板の周囲を覆うチャンバと、
前記チャンバ内において、その主面を上方に向けた基板の下面中央部を支持する第1支持部材と、その主面を上方に向けた基板の下面周辺部を支持する第2支持部材を備えるとともに、前記第1支持部材の支持高さが前記第2支持部材の支持高さに対して相対的に変更可能に構成された基板支持手段と、
前記チャンバの内部を排気して減圧する排気手段と、
を備え、
前記基板支持手段は、前記チャンバ内において、その主面を上方に向けた基板の下面中央部を支持する複数の第1支持ピンと、その主面を上方に向けた基板の下面周辺部を支持する複数の第2支持ピンと、前記第1支持ピンを前記第2支持ピンに対して相対的に昇降させる昇降機構とを備えるとともに、
前記基板の主面に形成された薄膜の種類に応じて、前記第1支持ピンと前記第2支持ピンとの高低差を設定し、前記排気手段による排気動作の実行中に、前記第1支持ピンを設定した高さにして、基板をその中央部を下方に撓ませた凹姿勢で支持することを特徴とする減圧乾燥装置。 - 請求項1に記載の減圧乾燥装置において、
前記排気手段は、その排気量を少量から多量に二段階に切替可能な構成を有し、
前記基板支持手段は、前記排気手段により少量の排気量での排気が実行されているときに基板をその中央部を下方に撓ませた凹姿勢で支持する減圧乾燥装置。 - 請求項1に記載の減圧乾燥装置において、
前記排気手段は、その排気量を少量から多量に二段階に切替可能な構成を有し、
前記基板支持手段は、前記排気手段により多量の排気量での排気が実行されているときに基板をその中央部を下方に撓ませた凹姿勢で支持する減圧乾燥装置。 - 請求項1乃至請求項3のいずれかに記載の減圧乾燥装置において、
前記チャンバを加熱する加熱手段を備える減圧乾燥装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007168632A JP5090079B2 (ja) | 2007-06-27 | 2007-06-27 | 減圧乾燥装置 |
KR1020080037554A KR100933610B1 (ko) | 2007-06-27 | 2008-04-23 | 감압 건조 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007168632A JP5090079B2 (ja) | 2007-06-27 | 2007-06-27 | 減圧乾燥装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009010085A JP2009010085A (ja) | 2009-01-15 |
JP5090079B2 true JP5090079B2 (ja) | 2012-12-05 |
Family
ID=40324905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007168632A Active JP5090079B2 (ja) | 2007-06-27 | 2007-06-27 | 減圧乾燥装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5090079B2 (ja) |
KR (1) | KR100933610B1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013036016A2 (ko) * | 2011-09-06 | 2013-03-14 | 주식회사 테라세미콘 | 진공 건조 장치 |
KR101243313B1 (ko) * | 2011-09-06 | 2013-03-13 | 주식회사 테라세미콘 | 진공 건조 장치 |
JP5781659B1 (ja) * | 2014-04-14 | 2015-09-24 | 株式会社石井表記 | 塗布膜形成乾燥装置 |
CN107272351A (zh) * | 2017-07-28 | 2017-10-20 | 武汉华星光电技术有限公司 | 承载装置及具有该承载装置的曝光设备 |
KR102493253B1 (ko) | 2018-04-26 | 2023-01-27 | 에이에스엠엘 네델란즈 비.브이. | 스테이지 장치, 리소그래피 장치, 제어 유닛 및 방법 |
JP7141318B2 (ja) * | 2018-11-27 | 2022-09-22 | 株式会社Screenホールディングス | 加熱装置および加熱方法 |
JP7244411B2 (ja) * | 2019-12-25 | 2023-03-22 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6328035A (ja) * | 1986-07-22 | 1988-02-05 | Nec Corp | 縮小投影露光装置 |
JP3350278B2 (ja) * | 1995-03-06 | 2002-11-25 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2003279245A (ja) * | 2002-03-19 | 2003-10-02 | Seiko Epson Corp | 塗布膜の乾燥方法及びその装置、デバイスの製造方法、デバイス |
JP2004055814A (ja) * | 2002-07-19 | 2004-02-19 | Hirata Corp | 基板処理装置 |
JP2004169975A (ja) * | 2002-11-19 | 2004-06-17 | Mitsubishi Chemicals Corp | 減圧乾燥処理装置および基板処理方法 |
JP2006105524A (ja) * | 2004-10-07 | 2006-04-20 | Dainippon Screen Mfg Co Ltd | 減圧乾燥装置および減圧乾燥方法 |
JP2006237262A (ja) * | 2005-02-24 | 2006-09-07 | Tokyo Electron Ltd | 加熱処理装置 |
JP4628964B2 (ja) * | 2005-04-26 | 2011-02-09 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4301219B2 (ja) * | 2005-08-01 | 2009-07-22 | セイコーエプソン株式会社 | 減圧乾燥方法、機能膜の製造方法および電気光学装置の製造方法、電気光学装置、液晶表示装置、有機el表示装置、並びに電子機器 |
-
2007
- 2007-06-27 JP JP2007168632A patent/JP5090079B2/ja active Active
-
2008
- 2008-04-23 KR KR1020080037554A patent/KR100933610B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100933610B1 (ko) | 2009-12-23 |
KR20080114497A (ko) | 2008-12-31 |
JP2009010085A (ja) | 2009-01-15 |
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