JP5085974B2 - 蛍光基板及び半導体発光装置 - Google Patents
蛍光基板及び半導体発光装置 Download PDFInfo
- Publication number
- JP5085974B2 JP5085974B2 JP2007117424A JP2007117424A JP5085974B2 JP 5085974 B2 JP5085974 B2 JP 5085974B2 JP 2007117424 A JP2007117424 A JP 2007117424A JP 2007117424 A JP2007117424 A JP 2007117424A JP 5085974 B2 JP5085974 B2 JP 5085974B2
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- nitrogen
- acceptor
- boron
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 title claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 99
- 229910052757 nitrogen Inorganic materials 0.000 claims description 51
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 44
- 229910052796 boron Inorganic materials 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 15
- 230000005284 excitation Effects 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 238000005253 cladding Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Landscapes
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007117424A JP5085974B2 (ja) | 2007-04-26 | 2007-04-26 | 蛍光基板及び半導体発光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007117424A JP5085974B2 (ja) | 2007-04-26 | 2007-04-26 | 蛍光基板及び半導体発光装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012196196A Division JP2013021350A (ja) | 2012-09-06 | 2012-09-06 | 蛍光基板及び半導体発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008277447A JP2008277447A (ja) | 2008-11-13 |
| JP2008277447A5 JP2008277447A5 (enExample) | 2010-06-17 |
| JP5085974B2 true JP5085974B2 (ja) | 2012-11-28 |
Family
ID=40055083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007117424A Expired - Fee Related JP5085974B2 (ja) | 2007-04-26 | 2007-04-26 | 蛍光基板及び半導体発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5085974B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4991834B2 (ja) | 2009-12-17 | 2012-08-01 | シャープ株式会社 | 車両用前照灯 |
| JP5232815B2 (ja) | 2010-02-10 | 2013-07-10 | シャープ株式会社 | 車両用前照灯 |
| JP2011243369A (ja) * | 2010-05-17 | 2011-12-01 | Sharp Corp | 発光装置、照明装置および車両用前照灯 |
| US8733996B2 (en) | 2010-05-17 | 2014-05-27 | Sharp Kabushiki Kaisha | Light emitting device, illuminating device, and vehicle headlamp |
| US9816677B2 (en) | 2010-10-29 | 2017-11-14 | Sharp Kabushiki Kaisha | Light emitting device, vehicle headlamp, illumination device, and laser element |
| JP5219230B1 (ja) * | 2012-09-04 | 2013-06-26 | エルシード株式会社 | SiC蛍光材料及びその製造方法並びに発光素子 |
| JP5521242B1 (ja) * | 2013-06-08 | 2014-06-11 | エルシード株式会社 | SiC材料の製造方法及びSiC材料積層体 |
| KR102252992B1 (ko) | 2014-12-12 | 2021-05-20 | 삼성전자주식회사 | 반도체 발광소자 패키지의 제조 방법 |
| WO2016098853A1 (ja) * | 2014-12-19 | 2016-06-23 | エルシード株式会社 | 発光素子 |
| CN105226150A (zh) * | 2015-10-10 | 2016-01-06 | 山东大学 | 一种N-B双掺SiC衬底的GaN基无荧光粉的高效白光LED结构及其制备方法和应用 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0645647A (ja) * | 1991-12-04 | 1994-02-18 | Sharp Corp | pn接合型発光ダイオード |
| JPH05304314A (ja) * | 1992-04-27 | 1993-11-16 | Toshiba Corp | 発光ダイオード |
| JP4403629B2 (ja) * | 2000-04-06 | 2010-01-27 | 株式会社デンソー | 半導体発光装置 |
| JP4153455B2 (ja) * | 2003-11-28 | 2008-09-24 | 学校法人 名城大学 | 蛍光体および発光ダイオード |
-
2007
- 2007-04-26 JP JP2007117424A patent/JP5085974B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008277447A (ja) | 2008-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5085974B2 (ja) | 蛍光基板及び半導体発光装置 | |
| JP4653671B2 (ja) | 発光装置 | |
| JP4857310B2 (ja) | 半導体発光素子及びその製造方法 | |
| US7855385B2 (en) | SiC crystal and semiconductor device | |
| US20070228931A1 (en) | White light emitting device | |
| CN1585144B (zh) | 紫外发光元件 | |
| JP2005268770A (ja) | 白色発光素子及び白色光源 | |
| US20070114560A1 (en) | Semiconductor and method of semiconductor fabrication | |
| JP5521242B1 (ja) | SiC材料の製造方法及びSiC材料積層体 | |
| JP2007109885A (ja) | 半導体発光装置及びその製造方法 | |
| JP2009212308A (ja) | 発光ダイオード | |
| JP6231005B2 (ja) | SiC蛍光材料及びその製造方法並びに発光素子 | |
| JP5774900B2 (ja) | 発光ダイオード素子及びその製造方法 | |
| KR101188279B1 (ko) | 희생층을 포함하는 수직형 질화물계 발광 다이오드 | |
| JP5330880B2 (ja) | 発光ダイオード素子及びその製造方法 | |
| CN107112399B (zh) | 波长转换发光装置 | |
| WO2011101929A1 (ja) | 半導体発光装置及びその製造方法 | |
| JP5060823B2 (ja) | 半導体発光素子 | |
| JP2013021350A (ja) | 蛍光基板及び半導体発光装置 | |
| JP2005317823A (ja) | 窒化ガリウム系発光装置 | |
| US10475966B2 (en) | Lighting emitting apparatus | |
| JP5537326B2 (ja) | 発光ダイオード素子及びその製造方法並びに単結晶SiC材料及びその製造方法 | |
| JP4864940B2 (ja) | 白色光源 | |
| WO2014203974A1 (ja) | 発光装置 | |
| JP2005129684A (ja) | 半導体発光素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100422 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100422 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111228 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120124 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120321 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120807 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120906 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150914 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |