JP5083780B2 - ナノインプリントを利用した金属酸化薄膜パターンの形成方法及びこれを利用したｌｅｄ素子の製造方法 - Google Patents

ナノインプリントを利用した金属酸化薄膜パターンの形成方法及びこれを利用したｌｅｄ素子の製造方法 Download PDF

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JP5083780B2
JP5083780B2 JP2010027450A JP2010027450A JP5083780B2 JP 5083780 B2 JP5083780 B2 JP 5083780B2 JP 2010027450 A JP2010027450 A JP 2010027450A JP 2010027450 A JP2010027450 A JP 2010027450A JP 5083780 B2 JP5083780 B2 JP 5083780B2
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thin film
metal
oxide thin
metal oxide
film pattern
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JP2011146661A (ja
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ホ パク，ヒュン
ホ ジョン，ジュン
ドン キム，キ
ジェウン チョイ，ダエ
ヒュク チョイ，ジュン
ヒェ リー，ジ
ウォン リー，スーン
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コリア インスティチュート オブ マシナリー アンド マテリアルズ
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Led Devices (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
JP2010027450A 2010-01-13 2010-02-10 ナノインプリントを利用した金属酸化薄膜パターンの形成方法及びこれを利用したｌｅｄ素子の製造方法 Active JP5083780B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100003109A KR100974288B1 (ko) 2010-01-13 2010-01-13 나노임프린트를 이용한 금속 산화박막 패턴 형성방법 및 이를 이용한 ｌｅｄ 소자의 제조방법
KR10-2010-0003109 2010-01-13

Publications (2)

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JP2011146661A JP2011146661A (ja) 2011-07-28
JP5083780B2 true JP5083780B2 (ja) 2012-11-28

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JP2010027450A Active JP5083780B2 (ja) 2010-01-13 2010-02-10 ナノインプリントを利用した金属酸化薄膜パターンの形成方法及びこれを利用したｌｅｄ素子の製造方法

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US (1) US8486753B2 (ko)
EP (1) EP2525392B1 (ko)
JP (1) JP5083780B2 (ko)
KR (1) KR100974288B1 (ko)
WO (1) WO2011087176A1 (ko)

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JP6101897B2 (ja) * 2012-05-14 2017-03-29 富山県 焼成体の製造方法
KR101399439B1 (ko) 2012-07-19 2014-05-28 한국기계연구원 금속박막의 선택적 제거에 의한 패턴형성 방법
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EP2525392A4 (en) 2016-03-02
KR100974288B1 (ko) 2010-08-05
EP2525392A1 (en) 2012-11-21
US20110169027A1 (en) 2011-07-14
US8486753B2 (en) 2013-07-16
EP2525392B1 (en) 2019-03-20
WO2011087176A1 (ko) 2011-07-21
JP2011146661A (ja) 2011-07-28

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