JP5066640B2 - 不純物の含有量が制御された単結晶の製造方法 - Google Patents

不純物の含有量が制御された単結晶の製造方法 Download PDF

Info

Publication number
JP5066640B2
JP5066640B2 JP2008001044A JP2008001044A JP5066640B2 JP 5066640 B2 JP5066640 B2 JP 5066640B2 JP 2008001044 A JP2008001044 A JP 2008001044A JP 2008001044 A JP2008001044 A JP 2008001044A JP 5066640 B2 JP5066640 B2 JP 5066640B2
Authority
JP
Japan
Prior art keywords
single crystal
content
impurity element
impurity
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008001044A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009161401A5 (enExample
JP2009161401A (ja
Inventor
浩平 久保田
佐千江 竹内
譲 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Mitsubishi Chemical Corp
Original Assignee
Tohoku University NUC
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Mitsubishi Chemical Corp filed Critical Tohoku University NUC
Priority to JP2008001044A priority Critical patent/JP5066640B2/ja
Publication of JP2009161401A publication Critical patent/JP2009161401A/ja
Publication of JP2009161401A5 publication Critical patent/JP2009161401A5/ja
Application granted granted Critical
Publication of JP5066640B2 publication Critical patent/JP5066640B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2008001044A 2008-01-08 2008-01-08 不純物の含有量が制御された単結晶の製造方法 Expired - Fee Related JP5066640B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008001044A JP5066640B2 (ja) 2008-01-08 2008-01-08 不純物の含有量が制御された単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008001044A JP5066640B2 (ja) 2008-01-08 2008-01-08 不純物の含有量が制御された単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2009161401A JP2009161401A (ja) 2009-07-23
JP2009161401A5 JP2009161401A5 (enExample) 2011-03-10
JP5066640B2 true JP5066640B2 (ja) 2012-11-07

Family

ID=40964461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008001044A Expired - Fee Related JP5066640B2 (ja) 2008-01-08 2008-01-08 不純物の含有量が制御された単結晶の製造方法

Country Status (1)

Country Link
JP (1) JP5066640B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6386409B2 (ja) * 2014-03-31 2018-09-05 日本碍子株式会社 １３族窒化物自立基板へのドーパント導入方法およびｌｅｄ素子の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192795A (ja) * 1975-02-12 1976-08-14 Ryukaaensoshosozai
JPS6058273B2 (ja) * 1983-04-07 1985-12-19 昭和電工株式会社 立方晶ｂｎ砥粒の改質法
JPS63108730A (ja) * 1986-10-27 1988-05-13 Sony Corp ３−５族化合物半導体のアニ−ル法
JPH02129098A (ja) * 1988-11-08 1990-05-17 Stanley Electric Co Ltd 不純物添加半導体結晶の製造方法
JP2004224600A (ja) * 2003-01-20 2004-08-12 Matsushita Electric Ind Co Ltd Ｉｉｉ族窒化物基板の製造方法および半導体装置
JP4624381B2 (ja) * 2007-07-12 2011-02-02 住友電気工業株式会社 ＧａＮ結晶の製造方法

Also Published As

Publication number Publication date
JP2009161401A (ja) 2009-07-23

Similar Documents

Publication Publication Date Title
US8088220B2 (en) Deep-eutectic melt growth of nitride crystals
CN101586253B (zh) N型ⅲ族氮化物基化合物半导体及其制造方法
KR101192061B1 (ko) ＧａＮ 결정의 제조 방법, ＧａＮ 결정, ＧａＮ 결정 기판, 반도체 장치 및 ＧａＮ 결정 제조 장치
CN101631902A (zh) 结晶组合物、晶片和半导体结构
KR20090064379A (ko) 질화물 반도체의 제조 방법, 결정 성장 속도 증가제, 질화물 단결정, 웨이퍼 및 디바이스
CN101641463A (zh) 结晶氮化镓以及相关的晶片和器件
CN102383181B (zh) 制备n-型Ⅲ族氮化物单晶的方法、所述单晶、和晶体基板
CN103620096B (zh) 第13族元素氮化物晶体的制造方法以及熔融液组合物
Boćkowski et al. Recent progress in crystal growth of bulk GaN
JP6217825B2 (ja) ＧａＮ結晶
WO2013058350A1 (ja) 周期表第１３族金属窒化物半導体結晶の製造方法、及び該製造方法により製造される周期表第１３族金属窒化物半導体結晶
JP5066640B2 (ja) 不純物の含有量が制御された単結晶の製造方法
JP4451265B2 (ja) Ｉｉｉ族元素窒化物結晶基板およびｉｉｉ族元素窒化物半導体デバイスの製造方法
JP5573225B2 (ja) 第１３族金属窒化物結晶の製造方法、該製造方法により得られる第１３族金属窒化物結晶および半導体デバイスの製造方法
CN101243011B (zh) 第13族金属氮化物结晶的制造方法、半导体器件的制造方法和这些制造方法中使用的溶液和熔融液
JP2008273768A (ja) Ｉｉｉ族窒化物結晶の成長方法およびｉｉｉ族窒化物結晶基板
JP4779848B2 (ja) 第１３族金属窒化物結晶の製造方法およびそれを用いた半導体デバイスの製造方法
JP5392318B2 (ja) 結晶製造方法および結晶成長速度制御方法
JP5392317B2 (ja) 結晶製造方法および結晶成長速度制御方法
JP2010070447A (ja) 第１３族金属窒化物結晶の製造方法および半導体デバイスの製造方法
JP2015013791A (ja) 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶
JP2009057247A (ja) Ｉｉｉ族窒化物結晶の成長方法およびｉｉｉ族窒化物結晶基板
JP2013203654A (ja) 周期表第１３族金属窒化物結晶の製造方法
JP2014177367A (ja) 周期表第１３族金属窒化物半導体結晶、該周期表第１３族金属窒化物半導体結晶を有するデバイス、及び周期表第１３族金属窒化物半導体結晶の製造方法
JP2014047134A (ja) Ｉｉｉ族窒化物結晶塊

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101227

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120323

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120410

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120417

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150824

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees