JP5066326B2 - 少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法 - Google Patents

少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法 Download PDF

Info

Publication number
JP5066326B2
JP5066326B2 JP2005142201A JP2005142201A JP5066326B2 JP 5066326 B2 JP5066326 B2 JP 5066326B2 JP 2005142201 A JP2005142201 A JP 2005142201A JP 2005142201 A JP2005142201 A JP 2005142201A JP 5066326 B2 JP5066326 B2 JP 5066326B2
Authority
JP
Japan
Prior art keywords
layer
sacrificial layer
organic
substrate
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005142201A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006013456A (ja
Inventor
ブラーベック クリストフ
ハォホ イェンス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konarka Technologies Inc
Original Assignee
Konarka Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34936267&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP5066326(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Konarka Technologies Inc filed Critical Konarka Technologies Inc
Publication of JP2006013456A publication Critical patent/JP2006013456A/ja
Application granted granted Critical
Publication of JP5066326B2 publication Critical patent/JP5066326B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/86—Series electrical configurations of multiple OLEDs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2005142201A 2004-05-14 2005-05-16 少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法 Expired - Fee Related JP5066326B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004024461.8 2004-05-14
DE102004024461A DE102004024461A1 (de) 2004-05-14 2004-05-14 Vorrichtung und Verfahren zur Herstellung eines elektronischen Bauelements mit zumindest einer aktiven organischen Schicht

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010274001A Division JP2011061238A (ja) 2004-05-14 2010-12-08 少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法

Publications (2)

Publication Number Publication Date
JP2006013456A JP2006013456A (ja) 2006-01-12
JP5066326B2 true JP5066326B2 (ja) 2012-11-07

Family

ID=34936267

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2005142201A Expired - Fee Related JP5066326B2 (ja) 2004-05-14 2005-05-16 少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法
JP2010274001A Pending JP2011061238A (ja) 2004-05-14 2010-12-08 少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法
JP2012259954A Expired - Fee Related JP5547265B2 (ja) 2004-05-14 2012-11-28 少なくとも一つの活性有機層を有する電子構成要素を製造するための方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010274001A Pending JP2011061238A (ja) 2004-05-14 2010-12-08 少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法
JP2012259954A Expired - Fee Related JP5547265B2 (ja) 2004-05-14 2012-11-28 少なくとも一つの活性有機層を有する電子構成要素を製造するための方法

Country Status (4)

Country Link
US (2) US7476278B2 (enExample)
EP (1) EP1596446A3 (enExample)
JP (3) JP5066326B2 (enExample)
DE (1) DE102004024461A1 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US8309163B2 (en) 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US7605328B2 (en) 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US8372734B2 (en) 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US8623448B2 (en) 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US7604843B1 (en) 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US7700464B2 (en) 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
DE102006026981A1 (de) * 2006-06-10 2007-12-13 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung einer strukturierten Schicht auf einem Trägersubstrat
DE102006027291B4 (de) * 2006-06-13 2010-06-17 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung einer strukturierten Schichtenfolge auf einem Substrat
DE102006027292B4 (de) * 2006-06-13 2010-06-17 Leonhard Kurz Gmbh & Co. Kg Verfahren zur Herstellung einer strukturierten Schichtfolge auf einem Substrat
US9112447B2 (en) * 2006-11-03 2015-08-18 Solera Laboratories, Inc. Nano power cell and method of use
US8319092B1 (en) 2006-11-03 2012-11-27 Solera Laboratories, Inc. Nano power cell and method of use
US8053260B2 (en) * 2006-11-17 2011-11-08 General Electric Company Large-area lighting systems and methods of making the same
US7799182B2 (en) 2006-12-01 2010-09-21 Applied Materials, Inc. Electroplating on roll-to-roll flexible solar cell substrates
US7736928B2 (en) * 2006-12-01 2010-06-15 Applied Materials, Inc. Precision printing electroplating through plating mask on a solar cell substrate
US7704352B2 (en) * 2006-12-01 2010-04-27 Applied Materials, Inc. High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate
US20080128019A1 (en) * 2006-12-01 2008-06-05 Applied Materials, Inc. Method of metallizing a solar cell substrate
WO2008091890A2 (en) * 2007-01-22 2008-07-31 Solopower, Inc. Roll-to-roll integration of thin film solar modules
DE102007060108B4 (de) * 2007-12-13 2011-07-21 LEONHARD KURZ Stiftung & Co. KG, 90763 Verfahren zur Herstellung eines Solarzellenmoduls
JP5172402B2 (ja) * 2008-03-13 2013-03-27 シャープ株式会社 有機ｅｌデバイス
US20100126849A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Apparatus and method for forming 3d nanostructure electrode for electrochemical battery and capacitor
DE102009053768A1 (de) 2009-11-18 2011-05-19 Daimler Ag Kraftwagenbauteil und Verfahren zu dessen Herstellung
DE102009053765A1 (de) 2009-11-18 2011-05-19 Daimler Ag Kraftwagenbauteil und Verfahren zu dessen Herstellung
DE102009053767A1 (de) 2009-11-18 2011-05-19 Daimler Ag Kraftwagenbauteil und Verfahren zu dessen Herstellung
DE102009053771A1 (de) 2009-11-18 2011-05-19 Daimler Ag Kraftwagenbauteil und Verfahren zu dessen Herstellung
DE102009053733A1 (de) 2009-11-18 2011-05-19 Daimler Ag Kraftwagenbauteil mit zumindest einem Abschirmelement und Verfahren zu dessen Herstellung
EP2355199B1 (en) * 2010-01-29 2017-07-05 Novaled GmbH A method for producing an organic light emitting device
CN102136549B (zh) * 2009-12-03 2016-03-09 诺瓦莱德公开股份有限公司 用于在有机光电子器件中形成电互连的方法、用于制造有机光电子器件的方法以及有机发光器件
CN102484534A (zh) * 2010-01-29 2012-05-30 惠普发展公司，有限责任合伙企业 光学传感器网络及其制造方法
TWI424576B (zh) * 2010-04-30 2014-01-21 Axuntek Solar Energy 穿透式太陽能電池模組及其製造方法
CN102237374B (zh) * 2010-05-04 2013-06-05 绿阳光电股份有限公司 穿透式太阳能电池模块及制造穿透式太阳能电池模块方法
CN103190199B (zh) * 2010-11-30 2016-03-02 株式会社钟化 有机el装置
US20140000684A1 (en) * 2010-12-03 2014-01-02 Jan Blochwitz-Nimoth Method for forming an electrical interconnection in an organic photovoltaic device and an organic photovoltaic device made by the same
WO2012093467A1 (ja) * 2011-01-06 2012-07-12 シャープ株式会社 有機ｅｌ表示装置およびその製造方法
CN103153830B (zh) * 2011-02-24 2016-04-20 株式会社尼康 可挠性基板的搬送装置及显示元件或电子电路的制造系统
EP2506330A1 (en) * 2011-04-01 2012-10-03 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for providing an embedded structure and for providing an electro-optical device including the same
EP2702048B1 (en) 2011-04-28 2019-01-23 Merck Patent GmbH Novel photoactive polymers
CN103563115B (zh) 2011-05-09 2017-05-31 默克专利股份有限公司 串列式光伏电池
EP2528097A1 (en) 2011-05-27 2012-11-28 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Photovoltaic device and method of manufacturing the same
US8674377B2 (en) * 2011-08-30 2014-03-18 General Electric Company Optoelectronic device package, array and method of fabrication
JP5745973B2 (ja) * 2011-09-02 2015-07-08 日立造船株式会社 薄膜太陽電池の製造装置および製造方法
KR101305660B1 (ko) * 2011-10-17 2013-09-09 엘지이노텍 주식회사 태양전지 모듈 및 이의 제조방법
WO2013137274A1 (ja) * 2012-03-12 2013-09-19 三菱化学株式会社 有機薄膜太陽電池モジュールの製造方法、及び有機薄膜太陽電池モジュール
US20130263925A1 (en) 2012-04-05 2013-10-10 Merck Patent Gmbh Hole Carrier Layer For Organic Photovoltaic Device
PL2837032T3 (pl) * 2012-04-10 2021-12-20 Infinitypv Aps Moduł fotowoltaiczny
DE102012106607B4 (de) 2012-07-20 2024-04-04 Heliatek Gmbh Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen
JP6179201B2 (ja) * 2013-06-05 2017-08-16 三菱ケミカル株式会社 有機薄膜太陽電池の製造方法
CN103611653B (zh) * 2013-12-13 2015-09-16 厦门惟华光能有限公司 有机太阳能电池实验用涂布机
DE102013226280A1 (de) 2013-12-17 2015-06-18 Belectric Opv Gmbh Organisches Photovoltaikelement, sowie Verfahren zur Herstellung eines solchen
EP2947697A1 (en) 2013-12-23 2015-11-25 Merck Patent GmbH Antireflection films and photovoltaic devices
DE102014004323B4 (de) 2014-03-25 2021-11-11 Gottfried Wilhelm Leibniz Universität Hannover Beschichtungseinrichtung zum zumindest teilweisen Beschichten einer Oberfläche
KR20160000192A (ko) * 2014-06-24 2016-01-04 코오롱인더스트리 주식회사 태양전지 모듈 패키지 및 그 제조방법
DE102014213978A1 (de) 2014-07-17 2016-01-21 Belectric Opv Gmbh Verfahren zur Herstellung eines organischen Halbleiterbauteils und organisches Halbleiterbauteil
EP3198660B1 (de) 2014-09-26 2022-07-06 Heliatek GmbH Verfahren zum aufbringen einer schutzschicht für die herstellung eines halbfabrikats
EP3523835B1 (en) 2016-10-05 2022-11-16 Raynergy Tek Inc. Organic photodetector
DE102017215197B3 (de) 2017-08-30 2018-12-27 Opvius Gmbh Halbleitermodul und Verfahren zur Herstellung eines Halbleitermoduls
US11456397B2 (en) 2019-03-12 2022-09-27 E Ink Corporation Energy harvesting electro-optic displays
DE102020123252A1 (de) 2019-12-12 2021-06-17 Heliatek Gmbh Beschichtung für ein optoelektronisches Bauelement, Verfahren zur Herstellung einer solchen Beschichtung, optoelektronisches Bauelement mit einer solchen Beschichtung

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606931A (en) * 1983-06-27 1986-08-19 International Business Machines Corporation Lift-off masking method
JPS60173842A (ja) * 1984-02-20 1985-09-07 Canon Inc パタ−ン形成方法
JPS61139075A (ja) * 1984-12-11 1986-06-26 Ricoh Co Ltd 光電変換素子の製造法
EP0193820A3 (en) * 1985-02-27 1988-01-07 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Method for forming a thin film pattern
JPH02148715A (ja) * 1988-11-29 1990-06-07 Canon Inc 半導体デバイスの連続形成装置
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
DE69410301T2 (de) * 1993-01-29 1998-09-24 Canon Kk Verfahren zur Herstellung funktioneller niedergeschlagener Schichten
JP3571785B2 (ja) * 1993-12-28 2004-09-29 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3272188B2 (ja) * 1995-05-17 2002-04-08 三洋電機株式会社 薄膜半導体装置の製造方法
EP1045454A4 (en) * 1998-07-27 2001-10-24 Citizen Watch Co Ltd SOLAR CELL, PRODUCTION METHOD AND PHOTOLITHOGRAPHY MASK FOR MANUFACTURING THE SAME
US6228228B1 (en) * 1999-02-23 2001-05-08 Sarnoff Corporation Method of making a light-emitting fiber
WO2001005194A1 (en) * 1999-07-07 2001-01-18 Sony Corporation Method and apparatus for manufacturing flexible organic el display
US6315820B1 (en) * 1999-10-19 2001-11-13 Ford Global Technologies, Inc. Method of manufacturing thin metal alloy foils
US6372538B1 (en) * 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
JP4316767B2 (ja) * 2000-03-22 2009-08-19 株式会社半導体エネルギー研究所 基板処理装置
DE10017610C2 (de) * 2000-03-30 2002-10-31 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung eines Solarmoduls mit integriert serienverschalteten Dünnschicht-Solarzellen und Verwendung davon
US7022910B2 (en) * 2002-03-29 2006-04-04 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
SE0103740D0 (sv) * 2001-11-08 2001-11-08 Forskarpatent I Vaest Ab Photovoltaic element and production methods
US6867539B1 (en) * 2000-07-12 2005-03-15 3M Innovative Properties Company Encapsulated organic electronic devices and method for making same
JP2002170669A (ja) * 2000-12-01 2002-06-14 Tdk Corp 有機ｅｌ表示装置およびその製造方法
DE60136858D1 (de) 2000-12-27 2009-01-15 Nippon Catalytic Chem Ind Copolymer vom polycarbonsäure typ, verfahren zu seiner herstellung, zementadditiv und zementzusammensetzung
US6819316B2 (en) * 2001-04-17 2004-11-16 3M Innovative Properties Company Flexible capacitive touch sensor
US7323635B2 (en) * 2001-06-15 2008-01-29 University Of Massachusetts Photovoltaic cell
US20020195928A1 (en) * 2001-06-25 2002-12-26 Grace Anthony J. Electroluminescent display device and method of making
EP2199437B1 (en) * 2001-08-09 2015-07-29 Asahi Kasei Kabushiki Kaisha Use of an organic semiconductor solution to form oriented polyacene crystals on a substrate
JP4336869B2 (ja) * 2001-11-27 2009-09-30 日本電気株式会社 真空成膜装置、真空成膜方法および電池用電極の製造方法
US6555284B1 (en) * 2001-12-27 2003-04-29 Eastman Kodak Company In situ vacuum method for making OLED devices
JP4979878B2 (ja) * 2002-01-25 2012-07-18 コナルカ テクノロジーズ インコーポレイテッド 色素増感太陽電池の構造及び材料
EP2249413A3 (en) * 2002-04-01 2011-02-02 Konica Corporation Support and organic electroluminescence element comprising the support
US8808457B2 (en) * 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US7396493B2 (en) * 2002-05-21 2008-07-08 3M Innovative Properties Company Multilayer optical film with melt zone to control delamination
US6943066B2 (en) * 2002-06-05 2005-09-13 Advantech Global, Ltd Active matrix backplane for controlling controlled elements and method of manufacture thereof
US6946597B2 (en) * 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
EP1529317A2 (en) * 2002-08-06 2005-05-11 Avecia Limited Organic electronic devices
US7247346B1 (en) * 2002-08-28 2007-07-24 Nanosolar, Inc. Combinatorial fabrication and high-throughput screening of optoelectronic devices
GB2395358B (en) * 2002-09-17 2006-08-02 Dainippon Printing Co Ltd Method of manufacturing a light emitting display panel and a light emitting display panel
US7080901B2 (en) * 2002-12-03 2006-07-25 Dai Nippon Printing Co. Ltd. Printing unit and manufacturing line for manufacturing flexible organic EL display
GB0229653D0 (en) * 2002-12-20 2003-01-22 Cambridge Display Tech Ltd Electrical connection of optoelectronic devices
US20040118444A1 (en) * 2002-12-20 2004-06-24 General Electric Company Large-area photovoltaic devices and methods of making same
US6833201B2 (en) * 2003-01-31 2004-12-21 Clemson University Nanostructured-doped compound for use in an EL element
US7153180B2 (en) * 2003-11-13 2006-12-26 Eastman Kodak Company Continuous manufacture of flat panel light emitting devices
US20050164425A1 (en) * 2004-01-23 2005-07-28 Markus Tuomikoski Optoelectronic component
US7122398B1 (en) * 2004-03-25 2006-10-17 Nanosolar, Inc. Manufacturing of optoelectronic devices
US6967115B1 (en) * 2004-04-20 2005-11-22 Nanosolor, Inc. Device transfer techniques for thin film optoelectronic devices

Also Published As

Publication number Publication date
US7476278B2 (en) 2009-01-13
DE102004024461A1 (de) 2005-12-01
US20070295400A1 (en) 2007-12-27
JP2011061238A (ja) 2011-03-24
US20050272263A1 (en) 2005-12-08
US8129616B2 (en) 2012-03-06
EP1596446A2 (en) 2005-11-16
JP5547265B2 (ja) 2014-07-09
JP2006013456A (ja) 2006-01-12
JP2013084968A (ja) 2013-05-09
EP1596446A3 (en) 2008-07-09

Similar Documents

Publication Publication Date Title
JP5066326B2 (ja) 少なくとも一つの活性有機層を有する電子構成要素を製造するための装置及び方法
JP4520708B2 (ja) 基板上に作製される複数のデバイスを封入する方法および電子デバイス
DE60010531T2 (de) Strukturierung von elektroden in oled-bauelementen
US6949389B2 (en) Encapsulation for organic light emitting diodes devices
CN111969034A (zh) 显示面板及其制备方法
JP5834009B2 (ja) モノリシック並列相互接続構造
DE69937407T2 (de) Verkapselung einer vorrichtung
EP2609641B1 (en) Self-aligned coverage of opaque conductive areas
US20090056801A1 (en) Thin film solar cell and manufacturing method thereof
US9824821B2 (en) Thin film capacitor with intermediate electrodes
CN106663703A (zh) 柔性衬底材料和制造电子薄膜器件的方法
KR100986024B1 (ko) 투명 전극 패턴 제조 방법 및 이를 갖는 전기 광학 소자의제조 방법
KR101894327B1 (ko) 유기 발광 표시 장치 및 이의 제조 방법
KR20120125280A (ko) 마스크 없이 ｏｌｅｄ 소자를 제조하는 방법
DE102016109485B4 (de) Verfahren zum herstellen eines optoelektronischen bauelements, optoelektronisches bauelement und schutzschicht
US10756225B2 (en) Method for manufacturing a photovoltaic module and photovoltaic module thus obtained
CN102652371A (zh) 用于创建串联连接的oled器件的方法
DE102012109218A1 (de) Verfahren zum Herstellen einer optoelektronischen Baugruppe und optoelektronische Baugruppe
US10121990B2 (en) Organic light emitting devices and methods of fabricating the same
WO2016146438A1 (de) Verfahren zum herstellen eines optoelektronischen bauelements
KR20220079437A (ko) 나노마스크를 이용한 투명 전도성 네트워크 제조방법
US9153783B2 (en) Organic device and manufacturing method thereof
US20170012239A1 (en) Light emitting apparatus
DE102012109142B4 (de) Verfahren zum Herstellen eines passiven elektronischen Bauelements und Verfahren zum Herstellen einer optoelektronischen Baugruppe
CN114420861A (zh) 显示面板及其制作方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080317

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100531

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100608

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100908

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100913

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101008

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101014

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101108

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101208

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111207

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120110

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120502

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120529

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

R155 Notification before disposition of declining of application

Free format text: JAPANESE INTERMEDIATE CODE: R155

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120813

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5066326

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150817

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150817

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150817

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees