JP5064116B2 - フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法 - Google Patents

フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法 Download PDF

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Publication number
JP5064116B2
JP5064116B2 JP2007143028A JP2007143028A JP5064116B2 JP 5064116 B2 JP5064116 B2 JP 5064116B2 JP 2007143028 A JP2007143028 A JP 2007143028A JP 2007143028 A JP2007143028 A JP 2007143028A JP 5064116 B2 JP5064116 B2 JP 5064116B2
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JP
Japan
Prior art keywords
photomask
pattern
light
test
exposure
Prior art date
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Active
Application number
JP2007143028A
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English (en)
Japanese (ja)
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JP2008298932A (ja
Inventor
勝彦 中西
光一郎 吉田
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Hoya Corp
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Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2007143028A priority Critical patent/JP5064116B2/ja
Priority to TW097117548A priority patent/TWI411872B/zh
Priority to CN2011100571023A priority patent/CN102109758B/zh
Priority to KR1020080049958A priority patent/KR101070558B1/ko
Priority to CN200810099966XA priority patent/CN101315518B/zh
Publication of JP2008298932A publication Critical patent/JP2008298932A/ja
Priority to KR1020110009719A priority patent/KR101306433B1/ko
Application granted granted Critical
Publication of JP5064116B2 publication Critical patent/JP5064116B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2007143028A 2007-05-30 2007-05-30 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法 Active JP5064116B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007143028A JP5064116B2 (ja) 2007-05-30 2007-05-30 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
TW097117548A TWI411872B (zh) 2007-05-30 2008-05-13 光罩之檢查方法、光罩之製造方法、電子零件之製造方法、測試遮罩及測試遮罩組件
CN2011100571023A CN102109758B (zh) 2007-05-30 2008-05-29 测试掩模
KR1020080049958A KR101070558B1 (ko) 2007-05-30 2008-05-29 포토마스크의 검사 방법, 포토마스크의 제조 방법, 전자부품의 제조 방법, 테스트 마스크 및 테스트 마스크 세트
CN200810099966XA CN101315518B (zh) 2007-05-30 2008-05-29 光掩模检查及制造方法、电子部件制造方法
KR1020110009719A KR101306433B1 (ko) 2007-05-30 2011-01-31 포토마스크의 검사 방법, 포토마스크의 제조 방법, 전자 부품의 제조 방법, 테스트 마스크 및 테스트 마스크 세트

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007143028A JP5064116B2 (ja) 2007-05-30 2007-05-30 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012022419A Division JP2012123409A (ja) 2012-02-03 2012-02-03 テストマスク

Publications (2)

Publication Number Publication Date
JP2008298932A JP2008298932A (ja) 2008-12-11
JP5064116B2 true JP5064116B2 (ja) 2012-10-31

Family

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Family Applications (1)

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JP2007143028A Active JP5064116B2 (ja) 2007-05-30 2007-05-30 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法

Country Status (4)

Country Link
JP (1) JP5064116B2 (ko)
KR (2) KR101070558B1 (ko)
CN (2) CN101315518B (ko)
TW (1) TWI411872B (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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TWI446105B (zh) * 2007-07-23 2014-07-21 Hoya Corp 光罩之製造方法、圖案轉印方法、光罩以及資料庫
JP5372403B2 (ja) * 2008-05-01 2013-12-18 Ｈｏｙａ株式会社 多階調フォトマスク、及びパターン転写方法
CN102193304B (zh) * 2010-03-12 2012-12-05 中芯国际集成电路制造(上海)有限公司 光掩模版和使用所述光掩模版的测试方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
CN102098532B (zh) * 2010-12-20 2012-10-17 沈阳敏像科技有限公司 数字移动终端视频设备灰阶测试图卡及制备方法
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
CN102866599B (zh) * 2012-10-12 2015-05-06 上海华力微电子有限公司 检测光刻机对图形模糊成像控制能力的方法
CN103676463A (zh) * 2013-11-29 2014-03-26 上海华力微电子有限公司 测试图形设计方法及opc优化方法
CN104977799B (zh) * 2014-04-09 2019-10-18 中芯国际集成电路制造(上海)有限公司 一种优化光掩模图案制备参数的方法
CN106707683B (zh) * 2015-08-04 2020-04-07 中芯国际集成电路制造(上海)有限公司 测试图形的形成方法
JP7017475B2 (ja) * 2018-06-19 2022-02-08 信越化学工業株式会社 フォトマスクブランク関連基板の表面状態の評価方法
CN114688964B (zh) * 2020-12-25 2023-05-23 上海微电子装备（集团）股份有限公司 关键尺寸测量校正方法、系统及计算机可读存储介质
CN113506754B (zh) * 2021-06-28 2024-01-23 上海华虹宏力半导体制造有限公司 光阻剥落的检测方法
CN114102487A (zh) * 2021-11-05 2022-03-01 中国电子科技集团公司第十三研究所 一种用于精密电装装配工艺的辅助夹具
CN114724915A (zh) * 2022-03-02 2022-07-08 北京航空航天大学 刻蚀终点检测方法及装置

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Also Published As

Publication number Publication date
CN102109758A (zh) 2011-06-29
CN101315518A (zh) 2008-12-03
TW200912517A (en) 2009-03-16
KR20080106046A (ko) 2008-12-04
CN102109758B (zh) 2013-01-09
JP2008298932A (ja) 2008-12-11
TWI411872B (zh) 2013-10-11
KR20110027731A (ko) 2011-03-16
KR101306433B1 (ko) 2013-09-09
CN101315518B (zh) 2012-07-25
KR101070558B1 (ko) 2011-10-05

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