JP5057652B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP5057652B2
JP5057652B2 JP2005081013A JP2005081013A JP5057652B2 JP 5057652 B2 JP5057652 B2 JP 5057652B2 JP 2005081013 A JP2005081013 A JP 2005081013A JP 2005081013 A JP2005081013 A JP 2005081013A JP 5057652 B2 JP5057652 B2 JP 5057652B2
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layer
light
region
electrode layer
substrate
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JP2005081013A
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Japanese (ja)
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JP2005311325A (ja
JP2005311325A5 (enExample
Inventor
厳 藤井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2005311325A5 publication Critical patent/JP2005311325A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005081013A 2004-03-24 2005-03-22 薄膜トランジスタの作製方法 Expired - Fee Related JP5057652B2 (ja)

Priority Applications (1)

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JP2005081013A JP5057652B2 (ja) 2004-03-24 2005-03-22 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

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JP2004088068 2004-03-24
JP2004088068 2004-03-24
JP2005081013A JP5057652B2 (ja) 2004-03-24 2005-03-22 薄膜トランジスタの作製方法

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JP2005311325A JP2005311325A (ja) 2005-11-04
JP2005311325A5 JP2005311325A5 (enExample) 2008-03-27
JP5057652B2 true JP5057652B2 (ja) 2012-10-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101851565B1 (ko) 2011-08-17 2018-04-25 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005091375A1 (en) 2004-03-19 2005-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device
CN101030536B (zh) * 2006-03-02 2010-06-23 株式会社半导体能源研究所 电路图案、薄膜晶体管及电子设备的制造方法
JP2007266596A (ja) * 2006-03-02 2007-10-11 Semiconductor Energy Lab Co Ltd 回路パターン及び薄膜トランジスタの作製方法、並びに該薄膜トランジスタを搭載した電子機器
JP5186750B2 (ja) * 2006-09-29 2013-04-24 大日本印刷株式会社 有機半導体素子およびその製造方法
JP5186749B2 (ja) * 2006-09-29 2013-04-24 大日本印刷株式会社 有機半導体素子およびその製造方法
US7646015B2 (en) 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5210594B2 (ja) * 2006-10-31 2013-06-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5138927B2 (ja) * 2006-12-25 2013-02-06 共同印刷株式会社 フレキシブルｔｆｔ基板及びその製造方法とフレキシブルディスプレイ
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012117439A1 (ja) * 2011-02-28 2012-09-07 パナソニック株式会社 薄膜半導体装置及びその製造方法
WO2018110244A1 (ja) * 2016-12-16 2018-06-21 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子
CN113019854B (zh) * 2021-03-07 2022-10-21 贾亮 一种电致荧光发光漆涂层、制作工艺及其应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403935B2 (ja) * 1997-03-14 2003-05-06 株式会社東芝 画像形成装置、画像形成方法、およびパターン形成方法、ならびにそれらに用いる感光体
JP2000171629A (ja) * 1998-12-09 2000-06-23 Canon Inc カラーフィルタとその製造方法、液晶素子
JP3381146B2 (ja) * 1999-02-05 2003-02-24 大日本印刷株式会社 カラーフィルタおよびその製造方法
JP4289522B2 (ja) * 1999-03-11 2009-07-01 大日本印刷株式会社 パターン形成体の製造法
JP2000343848A (ja) * 1999-03-30 2000-12-12 Kyodo Printing Co Ltd 光触媒体を用いた画像形成材料および画像形成方法
US6791144B1 (en) * 2000-06-27 2004-09-14 International Business Machines Corporation Thin film transistor and multilayer film structure and manufacturing method of same
JP3516441B2 (ja) * 2000-07-10 2004-04-05 インターナショナル・ビジネス・マシーンズ・コーポレーション アクティブマトリックス基板、表示装置、およびアクティブマトリックス基板の製造方法
JP2002040231A (ja) * 2000-07-31 2002-02-06 Dainippon Printing Co Ltd カラーフィルタおよびその製造方法
EP1393389B1 (en) * 2001-05-23 2018-12-05 Flexenable Limited Laser patterning of devices
JP2003059940A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP2003229579A (ja) * 2001-11-28 2003-08-15 Konica Corp 電界効果トランジスタ及びその製造方法
TWI256732B (en) * 2002-08-30 2006-06-11 Sharp Kk Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manufacturing method of liquid crystal display apparatus
JP4355900B2 (ja) * 2003-05-20 2009-11-04 日本電気株式会社 基板表面の平坦化方法、並びに平坦化基板、液晶表示装置、有機ｅｌ素子及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101851565B1 (ko) 2011-08-17 2018-04-25 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자

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