JP5047628B2 - 導電性を低下させたｐ型ウェルを備えたイメージセンサ及びカメラ - Google Patents

導電性を低下させたｐ型ウェルを備えたイメージセンサ及びカメラ Download PDF

Info

Publication number
JP5047628B2
JP5047628B2 JP2006549510A JP2006549510A JP5047628B2 JP 5047628 B2 JP5047628 B2 JP 5047628B2 JP 2006549510 A JP2006549510 A JP 2006549510A JP 2006549510 A JP2006549510 A JP 2006549510A JP 5047628 B2 JP5047628 B2 JP 5047628B2
Authority
JP
Japan
Prior art keywords
type well
image sensor
ccd
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2006549510A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007520063A5 (https=
JP2007520063A (ja
Inventor
クリストファー パークス
Original Assignee
オムニヴィジョン テクノロジーズ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オムニヴィジョン テクノロジーズ インコーポレイテッド filed Critical オムニヴィジョン テクノロジーズ インコーポレイテッド
Publication of JP2007520063A publication Critical patent/JP2007520063A/ja
Publication of JP2007520063A5 publication Critical patent/JP2007520063A5/ja
Application granted granted Critical
Publication of JP5047628B2 publication Critical patent/JP5047628B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2006549510A 2004-01-09 2005-01-06 導電性を低下させたｐ型ウェルを備えたイメージセンサ及びカメラ Expired - Lifetime JP5047628B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/754,354 2004-01-09
US10/754,354 US7075129B2 (en) 2004-01-09 2004-01-09 Image sensor with reduced p-well conductivity
PCT/US2005/000780 WO2005071751A1 (en) 2004-01-09 2005-01-06 Image sensor with reduced p-well conductivity

Publications (3)

Publication Number Publication Date
JP2007520063A JP2007520063A (ja) 2007-07-19
JP2007520063A5 JP2007520063A5 (https=) 2008-02-14
JP5047628B2 true JP5047628B2 (ja) 2012-10-10

Family

ID=34739370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006549510A Expired - Lifetime JP5047628B2 (ja) 2004-01-09 2005-01-06 導電性を低下させたｐ型ウェルを備えたイメージセンサ及びカメラ

Country Status (5)

Country Link
US (1) US7075129B2 (https=)
EP (1) EP1702364B1 (https=)
JP (1) JP5047628B2 (https=)
DE (1) DE602005025586D1 (https=)
WO (1) WO2005071751A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US20080318314A1 (en) * 2007-06-20 2008-12-25 Valentin Fulga Production from blood of cells of neural lineage
US9404084B2 (en) * 2007-06-20 2016-08-02 Kwalata Trading Limited Regulating stem cells
US7807955B2 (en) * 2008-05-30 2010-10-05 Eastman Kodak Company Image sensor having reduced well bounce
US8922561B2 (en) 2011-02-21 2014-12-30 Panasonic Intellectual Property Corporation Of America Data processing device, data processing system, and data processing method for identifying data from both licensed and unlicensed devices
US8830372B2 (en) 2011-09-23 2014-09-09 Semiconductor Components Industries, Llc CCD image sensor having multiple clocking modes
US8803058B2 (en) 2011-09-23 2014-08-12 Truesense Imaging, Inc. Multiple clocking modes for a CCD imager
US8723098B2 (en) 2011-09-23 2014-05-13 Truesense Imaging, Inc. Charge coupled image sensor and method of operating with transferring operation of charge packets from plural photodetectors to vertical CCD shift registers (as amended)
US8735794B2 (en) 2011-09-23 2014-05-27 Truesense Imaging, Inc. Multiple clocking modes for a CCD imager

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106071A (ja) * 1988-10-14 1990-04-18 Matsushita Electron Corp 電荷転送型固体撮像装置
US5151380A (en) 1991-08-19 1992-09-29 Texas Instruments Incorporated Method of making top buss virtual phase frame interline transfer CCD image sensor
US5438211A (en) * 1993-03-31 1995-08-01 Kabushiki Kaisha Toshiba Charge-transfer device having an improved charge-sensing section
US5736756A (en) 1994-09-29 1998-04-07 Sony Corporation Solid-state image sensing device with lght shielding film
JP2897825B2 (ja) 1996-12-20 1999-05-31 日本電気株式会社 固体撮像装置
KR100263474B1 (ko) 1998-01-16 2000-08-01 김영환 고체 촬상 소자 및 그의 제조 방법
JP3410016B2 (ja) 1998-03-31 2003-05-26 株式会社東芝 増幅型固体撮像装置

Also Published As

Publication number Publication date
EP1702364A1 (en) 2006-09-20
DE602005025586D1 (de) 2011-02-10
WO2005071751A1 (en) 2005-08-04
US7075129B2 (en) 2006-07-11
US20050151056A1 (en) 2005-07-14
EP1702364B1 (en) 2010-12-29
JP2007520063A (ja) 2007-07-19

Similar Documents

Publication Publication Date Title
US7709869B2 (en) Photoelectric conversion device, method of manufacturing the same, and image sensing system
US7411170B2 (en) Photoelectric-conversion apparatus and image-pickup system
US8796609B2 (en) Photoelectric conversion apparatus and imaging system using the photoelectric conversion apparatus
CN100579183C (zh) 固态成像装置
JP5047628B2 (ja) 導電性を低下させたｐ型ウェルを備えたイメージセンサ及びカメラ
CN102956658A (zh) 固态成像设备、固态成像设备的制造方法及电子设备
CN100429780C (zh) 固体摄像装置
KR101159032B1 (ko) 고체 촬상 소자
KR101493870B1 (ko) 신호 대 잡음 비가 개선된 이미지 소자 및 그 제조방법
JP2004129256A (ja) 累積モードにおける電荷結合素子の暗電流の削減方法
US8607424B1 (en) Reverse MIM capacitor
JP3621273B2 (ja) 固体撮像装置およびその製造方法
JP3042042B2 (ja) 固体撮像装置
US7511751B2 (en) CCD linear sensor
US7586140B2 (en) CMOS image sensors including pickup regions
KR20010106831A (ko) 전자 줌 기능에 적합한 고체 촬상 소자
JP2009071182A (ja) 固体撮像装置及びその製造方法、並びにカメラ
JP4198277B2 (ja) 固体撮像素子
JP4471677B2 (ja) 固体撮像装置及び電荷転送部
JPH11195779A (ja) カラーリニアイメージセンサおよびその駆動方法
JP2003347537A (ja) 固体撮像素子
JP2018046089A (ja) 固体撮像装置及びその製造方法、並びに、電子機器
JP2008277787A (ja) 電荷転送装置
KR100873811B1 (ko) 고감도 이미지센서
KR100481838B1 (ko) 전하결합소자형이미지센서

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071225

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071225

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110719

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110906

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111122

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120703

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120718

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150727

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5047628

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term