DE602005025586D1 - Bildsensor mit verringerter p-mulden-leitfähigkeit - Google Patents

Bildsensor mit verringerter p-mulden-leitfähigkeit

Info

Publication number
DE602005025586D1
DE602005025586D1 DE602005025586T DE602005025586T DE602005025586D1 DE 602005025586 D1 DE602005025586 D1 DE 602005025586D1 DE 602005025586 T DE602005025586 T DE 602005025586T DE 602005025586 T DE602005025586 T DE 602005025586T DE 602005025586 D1 DE602005025586 D1 DE 602005025586D1
Authority
DE
Germany
Prior art keywords
reduced
image sensor
mold conductivity
conductivity
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005025586T
Other languages
German (de)
English (en)
Inventor
Christopher Parks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of DE602005025586D1 publication Critical patent/DE602005025586D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
DE602005025586T 2004-01-09 2005-01-06 Bildsensor mit verringerter p-mulden-leitfähigkeit Expired - Lifetime DE602005025586D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/754,354 US7075129B2 (en) 2004-01-09 2004-01-09 Image sensor with reduced p-well conductivity
PCT/US2005/000780 WO2005071751A1 (en) 2004-01-09 2005-01-06 Image sensor with reduced p-well conductivity

Publications (1)

Publication Number Publication Date
DE602005025586D1 true DE602005025586D1 (de) 2011-02-10

Family

ID=34739370

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005025586T Expired - Lifetime DE602005025586D1 (de) 2004-01-09 2005-01-06 Bildsensor mit verringerter p-mulden-leitfähigkeit

Country Status (5)

Country Link
US (1) US7075129B2 (https=)
EP (1) EP1702364B1 (https=)
JP (1) JP5047628B2 (https=)
DE (1) DE602005025586D1 (https=)
WO (1) WO2005071751A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US20080318314A1 (en) * 2007-06-20 2008-12-25 Valentin Fulga Production from blood of cells of neural lineage
US9404084B2 (en) * 2007-06-20 2016-08-02 Kwalata Trading Limited Regulating stem cells
US7807955B2 (en) * 2008-05-30 2010-10-05 Eastman Kodak Company Image sensor having reduced well bounce
US8922561B2 (en) 2011-02-21 2014-12-30 Panasonic Intellectual Property Corporation Of America Data processing device, data processing system, and data processing method for identifying data from both licensed and unlicensed devices
US8830372B2 (en) 2011-09-23 2014-09-09 Semiconductor Components Industries, Llc CCD image sensor having multiple clocking modes
US8803058B2 (en) 2011-09-23 2014-08-12 Truesense Imaging, Inc. Multiple clocking modes for a CCD imager
US8723098B2 (en) 2011-09-23 2014-05-13 Truesense Imaging, Inc. Charge coupled image sensor and method of operating with transferring operation of charge packets from plural photodetectors to vertical CCD shift registers (as amended)
US8735794B2 (en) 2011-09-23 2014-05-27 Truesense Imaging, Inc. Multiple clocking modes for a CCD imager

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106071A (ja) * 1988-10-14 1990-04-18 Matsushita Electron Corp 電荷転送型固体撮像装置
US5151380A (en) 1991-08-19 1992-09-29 Texas Instruments Incorporated Method of making top buss virtual phase frame interline transfer CCD image sensor
US5438211A (en) * 1993-03-31 1995-08-01 Kabushiki Kaisha Toshiba Charge-transfer device having an improved charge-sensing section
US5736756A (en) 1994-09-29 1998-04-07 Sony Corporation Solid-state image sensing device with lght shielding film
JP2897825B2 (ja) 1996-12-20 1999-05-31 日本電気株式会社 固体撮像装置
KR100263474B1 (ko) 1998-01-16 2000-08-01 김영환 고체 촬상 소자 및 그의 제조 방법
JP3410016B2 (ja) 1998-03-31 2003-05-26 株式会社東芝 増幅型固体撮像装置

Also Published As

Publication number Publication date
EP1702364A1 (en) 2006-09-20
JP5047628B2 (ja) 2012-10-10
WO2005071751A1 (en) 2005-08-04
US7075129B2 (en) 2006-07-11
US20050151056A1 (en) 2005-07-14
EP1702364B1 (en) 2010-12-29
JP2007520063A (ja) 2007-07-19

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