JP5046439B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5046439B2
JP5046439B2 JP2001143714A JP2001143714A JP5046439B2 JP 5046439 B2 JP5046439 B2 JP 5046439B2 JP 2001143714 A JP2001143714 A JP 2001143714A JP 2001143714 A JP2001143714 A JP 2001143714A JP 5046439 B2 JP5046439 B2 JP 5046439B2
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JP
Japan
Prior art keywords
film
etching
conductive layer
region
insulating film
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Expired - Fee Related
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JP2001143714A
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English (en)
Japanese (ja)
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JP2002050636A (ja
JP2002050636A5 (https=
Inventor
英臣 須沢
幸治 小野
徹 高山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001143714A priority Critical patent/JP5046439B2/ja
Publication of JP2002050636A publication Critical patent/JP2002050636A/ja
Publication of JP2002050636A5 publication Critical patent/JP2002050636A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2001143714A 2000-05-12 2001-05-14 半導体装置の作製方法 Expired - Fee Related JP5046439B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001143714A JP5046439B2 (ja) 2000-05-12 2001-05-14 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000140695 2000-05-12
JP2000140695 2000-05-12
JP2000-140695 2000-05-12
JP2001143714A JP5046439B2 (ja) 2000-05-12 2001-05-14 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011275474A Division JP5292453B2 (ja) 2000-05-12 2011-12-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002050636A JP2002050636A (ja) 2002-02-15
JP2002050636A5 JP2002050636A5 (https=) 2008-07-03
JP5046439B2 true JP5046439B2 (ja) 2012-10-10

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ID=26591811

Family Applications (1)

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JP2001143714A Expired - Fee Related JP5046439B2 (ja) 2000-05-12 2001-05-14 半導体装置の作製方法

Country Status (1)

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JP (1) JP5046439B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869509B2 (ja) 2001-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3646718B2 (ja) 2002-10-04 2005-05-11 セイコーエプソン株式会社 半導体装置の製造方法
JP4529414B2 (ja) * 2003-10-29 2010-08-25 セイコーエプソン株式会社 電気光学装置用基板の製造方法
KR100598619B1 (ko) * 2005-06-02 2006-07-07 주식회사 현대오토넷 차량용 모니터의 팝업장치
US7994000B2 (en) * 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
KR102187047B1 (ko) 2013-07-10 2020-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 구동 회로, 및 표시 장치
TWI665778B (zh) * 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
US9653487B2 (en) * 2014-02-05 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, module, and electronic device
TWI658597B (zh) * 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
US11024725B2 (en) * 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116065A (ja) * 1994-10-12 1996-05-07 Sony Corp 薄膜半導体装置
JPH0955508A (ja) * 1995-08-10 1997-02-25 Sanyo Electric Co Ltd 薄膜トランジスタ及びその製造方法
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法

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JP2002050636A (ja) 2002-02-15

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