JP5045249B2 - 偏光素子の製造方法 - Google Patents
偏光素子の製造方法 Download PDFInfo
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- JP5045249B2 JP5045249B2 JP2007146714A JP2007146714A JP5045249B2 JP 5045249 B2 JP5045249 B2 JP 5045249B2 JP 2007146714 A JP2007146714 A JP 2007146714A JP 2007146714 A JP2007146714 A JP 2007146714A JP 5045249 B2 JP5045249 B2 JP 5045249B2
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- Prior art keywords
- metal
- film
- polarizing element
- liquid crystal
- etching
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 132
- 239000002184 metal Substances 0.000 claims description 132
- 239000000758 substrate Substances 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 17
- 239000011247 coating layer Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 106
- 239000004973 liquid crystal related substance Substances 0.000 description 74
- 239000010410 layer Substances 0.000 description 52
- 230000003287 optical effect Effects 0.000 description 34
- 238000000151 deposition Methods 0.000 description 27
- 230000008021 deposition Effects 0.000 description 27
- 239000007789 gas Substances 0.000 description 23
- 229910001111 Fine metal Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Polarising Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007146714A JP5045249B2 (ja) | 2007-06-01 | 2007-06-01 | 偏光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007146714A JP5045249B2 (ja) | 2007-06-01 | 2007-06-01 | 偏光素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008299178A JP2008299178A (ja) | 2008-12-11 |
| JP2008299178A5 JP2008299178A5 (enrdf_load_stackoverflow) | 2010-07-01 |
| JP5045249B2 true JP5045249B2 (ja) | 2012-10-10 |
Family
ID=40172732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007146714A Active JP5045249B2 (ja) | 2007-06-01 | 2007-06-01 | 偏光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5045249B2 (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010210706A (ja) * | 2009-03-06 | 2010-09-24 | Seiko Epson Corp | 偏光素子 |
| JP5552888B2 (ja) * | 2009-10-30 | 2014-07-16 | セイコーエプソン株式会社 | 偏光素子、偏光素子の製造方法、液晶装置および電子機器 |
| JP5929881B2 (ja) * | 2013-12-11 | 2016-06-08 | ウシオ電機株式会社 | グリッド偏光素子 |
| JP5929886B2 (ja) * | 2013-12-24 | 2016-06-08 | ウシオ電機株式会社 | グリッド偏光素子 |
| KR101729683B1 (ko) | 2015-09-16 | 2017-04-25 | 한국기계연구원 | 선격자 편광자의 제조 방법 |
| WO2017131498A1 (ko) | 2016-01-27 | 2017-08-03 | 주식회사 엘지화학 | 필름 마스크, 이의 제조방법, 이를 이용한 패턴 형성 방법 및 이를 이용하여 형성된 패턴 |
| JP6690814B2 (ja) | 2016-01-27 | 2020-04-28 | エルジー・ケム・リミテッド | フィルムマスク、その製造方法およびこれを用いたパターンの形成方法 |
| CN108351604B (zh) | 2016-01-27 | 2020-10-30 | 株式会社Lg化学 | 膜掩模、其制备方法、使用膜掩模的图案形成方法和由膜掩模形成的图案 |
| US20200089048A1 (en) * | 2016-12-06 | 2020-03-19 | Scivax Corporation | Optical member, liquid crystal panel using the optical member, and manufacturing methods therefor |
| JP6410906B1 (ja) | 2017-09-26 | 2018-10-24 | デクセリアルズ株式会社 | 偏光素子及び光学機器 |
| CN115295574B (zh) * | 2022-08-31 | 2024-09-27 | 厦门天马微电子有限公司 | 发光面板和显示装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05289027A (ja) * | 1991-06-14 | 1993-11-05 | Tdk Corp | 偏光子、偏光子付光学素子及びそれらの製造方法 |
| AU2003202404A1 (en) * | 2002-02-12 | 2003-09-04 | Unaxis Balzers Limited | Optical component comprising submicron hollow spaces |
| JP2007010712A (ja) * | 2005-06-28 | 2007-01-18 | Seiko Epson Corp | 光学素子の製造方法、投射型表示装置 |
| JP4497041B2 (ja) * | 2005-07-08 | 2010-07-07 | セイコーエプソン株式会社 | ワイヤーグリッド偏光子の製造方法 |
| JP2007033558A (ja) * | 2005-07-22 | 2007-02-08 | Nippon Zeon Co Ltd | グリッド偏光子及びその製法 |
-
2007
- 2007-06-01 JP JP2007146714A patent/JP5045249B2/ja active Active
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| Publication number | Publication date |
|---|---|
| JP2008299178A (ja) | 2008-12-11 |
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