JP5039961B2 - 三次元画像構築方法 - Google Patents

三次元画像構築方法 Download PDF

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JP5039961B2
JP5039961B2 JP2007114001A JP2007114001A JP5039961B2 JP 5039961 B2 JP5039961 B2 JP 5039961B2 JP 2007114001 A JP2007114001 A JP 2007114001A JP 2007114001 A JP2007114001 A JP 2007114001A JP 5039961 B2 JP5039961 B2 JP 5039961B2
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cross
sample
dimensional image
deposition film
construction method
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JP2008270073A5 (enExample
JP2008270073A (ja
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浩二 岩崎
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Hitachi High Tech Science Corp
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SII NanoTechnology Inc
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JP2007114001A 2007-04-24 2007-04-24 三次元画像構築方法 Active JP5039961B2 (ja)

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JP2007114001A JP5039961B2 (ja) 2007-04-24 2007-04-24 三次元画像構築方法

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JP2007114001A JP5039961B2 (ja) 2007-04-24 2007-04-24 三次元画像構築方法

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JP2008270073A JP2008270073A (ja) 2008-11-06
JP2008270073A5 JP2008270073A5 (enExample) 2010-07-01
JP5039961B2 true JP5039961B2 (ja) 2012-10-03

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Families Citing this family (26)

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Publication number Priority date Publication date Assignee Title
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7804068B2 (en) 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
WO2009155275A1 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt. Inc. Sample imaging with charged particles
JP5739119B2 (ja) * 2009-09-15 2015-06-24 株式会社日立ハイテクサイエンス 断面加工観察装置
JP5763298B2 (ja) * 2010-03-10 2015-08-12 株式会社日立ハイテクサイエンス 集束イオンビーム装置及び断面加工観察方法
US8350237B2 (en) * 2010-03-31 2013-01-08 Fei Company Automated slice milling for viewing a feature
JP5969233B2 (ja) 2012-03-22 2016-08-17 株式会社日立ハイテクサイエンス 断面加工観察方法及び装置
JP6355318B2 (ja) 2012-11-15 2018-07-11 株式会社日立ハイテクサイエンス 断面加工観察方法及び装置
CN105264635B (zh) * 2012-12-31 2018-11-20 Fei 公司 用于利用带电粒子束的倾斜或掠射研磨操作的基准设计
JP6290559B2 (ja) 2013-09-03 2018-03-07 株式会社日立ハイテクサイエンス 断面加工観察方法、断面加工観察装置
JP6490938B2 (ja) 2013-10-24 2019-03-27 株式会社日立ハイテクサイエンス 断面加工方法、断面加工装置
US9218940B1 (en) * 2014-05-30 2015-12-22 Fei Company Method and apparatus for slice and view sample imaging
JP6403196B2 (ja) 2014-11-07 2018-10-10 日本電子株式会社 画像評価方法および荷電粒子ビーム装置
JP6114319B2 (ja) * 2015-02-04 2017-04-12 株式会社日立ハイテクサイエンス 集束イオンビーム装置及び断面加工観察方法
JP2017174504A (ja) 2016-03-18 2017-09-28 株式会社日立ハイテクサイエンス 複合荷電粒子ビーム装置
JP6711655B2 (ja) 2016-03-18 2020-06-17 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP6925608B2 (ja) 2016-03-25 2021-08-25 株式会社日立ハイテクサイエンス 断面加工観察方法、断面加工観察装置
US10242842B2 (en) 2016-03-25 2019-03-26 Hitachi High-Tech Science Corporation Method for cross-section processing and observation and apparatus therefor
JP6636839B2 (ja) 2016-03-28 2020-01-29 株式会社日立ハイテクサイエンス 試料ホルダー、集束イオンビーム装置
JP6974820B2 (ja) 2017-03-27 2021-12-01 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工方法
JP7031859B2 (ja) 2018-02-20 2022-03-08 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工観察方法
DE112018007444T5 (de) * 2018-05-15 2021-01-07 Hitachi High-Tech Corporation Ladungsträgerstrahlvorrichtung, verfahren zum verarbeiten einer probe und beobachtungsverfahren
US10811219B2 (en) * 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0835921A (ja) * 1994-07-22 1996-02-06 Kanagawa Kagaku Gijutsu Akad 試料ブロック及びその自動検査装置
JP3672769B2 (ja) * 1999-06-28 2005-07-20 東芝マイクロエレクトロニクス株式会社 Ｆｉｂ加工方法及びｆｉｂ加工位置の位置決め方法
DE10015157A1 (de) * 2000-03-27 2001-10-18 P A L M Gmbh Verfahren zur Bearbeitung einer biologischen Masse und Steuersystem für eine Vorrichtung zur Bearbeitung einer biologischen Masse
JP4357347B2 (ja) * 2004-04-16 2009-11-04 株式会社日立ハイテクノロジーズ 試料加工方法及び試料観察方法
JP2006221961A (ja) * 2005-02-10 2006-08-24 Seiko Epson Corp チップの断面観察方法

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