JP5033314B2 - イオンビーム加工装置及び加工方法 - Google Patents

イオンビーム加工装置及び加工方法 Download PDF

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Publication number
JP5033314B2
JP5033314B2 JP2005167670A JP2005167670A JP5033314B2 JP 5033314 B2 JP5033314 B2 JP 5033314B2 JP 2005167670 A JP2005167670 A JP 2005167670A JP 2005167670 A JP2005167670 A JP 2005167670A JP 5033314 B2 JP5033314 B2 JP 5033314B2
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JP
Japan
Prior art keywords
ion beam
sample
ion
cross
section
Prior art date
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Expired - Lifetime
Application number
JP2005167670A
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English (en)
Japanese (ja)
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JP2006128068A (ja
JP2006128068A5 (enExample
Inventor
広康 志知
宗行 福田
義則 中山
正樹 長谷川
聡 富松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2005167670A priority Critical patent/JP5033314B2/ja
Priority to US11/210,732 priority patent/US7326942B2/en
Publication of JP2006128068A publication Critical patent/JP2006128068A/ja
Priority to US12/020,150 priority patent/US7952083B2/en
Publication of JP2006128068A5 publication Critical patent/JP2006128068A5/ja
Priority to US13/099,670 priority patent/US20110204225A1/en
Application granted granted Critical
Publication of JP5033314B2 publication Critical patent/JP5033314B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/10—Duoplasmatrons ; Duopigatrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0456—Supports
    • H01J2237/0458—Supports movable, i.e. for changing between differently sized apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H01J2237/0835—Variable cross-section or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2005167670A 2004-09-29 2005-06-08 イオンビーム加工装置及び加工方法 Expired - Lifetime JP5033314B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005167670A JP5033314B2 (ja) 2004-09-29 2005-06-08 イオンビーム加工装置及び加工方法
US11/210,732 US7326942B2 (en) 2004-09-29 2005-08-25 Ion beam system and machining method
US12/020,150 US7952083B2 (en) 2004-09-29 2008-01-25 Ion beam system and machining method
US13/099,670 US20110204225A1 (en) 2004-09-29 2011-05-03 ION Beam System and Machining Method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004283011 2004-09-29
JP2004283011 2004-09-29
JP2005167670A JP5033314B2 (ja) 2004-09-29 2005-06-08 イオンビーム加工装置及び加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012061397A Division JP5509239B2 (ja) 2004-09-29 2012-03-19 イオンビーム加工装置及び加工方法

Publications (3)

Publication Number Publication Date
JP2006128068A JP2006128068A (ja) 2006-05-18
JP2006128068A5 JP2006128068A5 (enExample) 2008-08-07
JP5033314B2 true JP5033314B2 (ja) 2012-09-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005167670A Expired - Lifetime JP5033314B2 (ja) 2004-09-29 2005-06-08 イオンビーム加工装置及び加工方法

Country Status (2)

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US (3) US7326942B2 (enExample)
JP (1) JP5033314B2 (enExample)

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JP5099291B2 (ja) * 2006-02-14 2012-12-19 エスアイアイ・ナノテクノロジー株式会社 集束イオンビーム装置及び試料の断面加工・観察方法
JP5127148B2 (ja) * 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
JP4205122B2 (ja) * 2006-07-19 2009-01-07 株式会社日立ハイテクノロジーズ 荷電粒子線加工装置
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Also Published As

Publication number Publication date
US7326942B2 (en) 2008-02-05
US20060065854A1 (en) 2006-03-30
US20110204225A1 (en) 2011-08-25
US20080135779A1 (en) 2008-06-12
JP2006128068A (ja) 2006-05-18
US7952083B2 (en) 2011-05-31

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