JP5031984B2 - レーザー熱処理のための加熱チャック - Google Patents

レーザー熱処理のための加熱チャック Download PDF

Info

Publication number
JP5031984B2
JP5031984B2 JP2004362776A JP2004362776A JP5031984B2 JP 5031984 B2 JP5031984 B2 JP 5031984B2 JP 2004362776 A JP2004362776 A JP 2004362776A JP 2004362776 A JP2004362776 A JP 2004362776A JP 5031984 B2 JP5031984 B2 JP 5031984B2
Authority
JP
Japan
Prior art keywords
wafer
heater module
upper plate
chuck
chuck device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004362776A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006156915A5 (https=
JP2006156915A (ja
Inventor
エー シャリーフ イクバル
ランドー イゴール
エー マークル ディビット
タルワー ソミット
オー トンプソン マイケル
エー アングロフ イヴェリン
チョウ セナウアン
Original Assignee
ウルトラテック インク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ウルトラテック インク filed Critical ウルトラテック インク
Publication of JP2006156915A publication Critical patent/JP2006156915A/ja
Publication of JP2006156915A5 publication Critical patent/JP2006156915A5/ja
Application granted granted Critical
Publication of JP5031984B2 publication Critical patent/JP5031984B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B23K26/703—Cooling arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2004362776A 2004-12-01 2004-12-15 レーザー熱処理のための加熱チャック Expired - Fee Related JP5031984B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/001,954 2004-12-01
US11/001,954 US7731798B2 (en) 2004-12-01 2004-12-01 Heated chuck for laser thermal processing

Publications (3)

Publication Number Publication Date
JP2006156915A JP2006156915A (ja) 2006-06-15
JP2006156915A5 JP2006156915A5 (https=) 2012-07-12
JP5031984B2 true JP5031984B2 (ja) 2012-09-26

Family

ID=36566421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004362776A Expired - Fee Related JP5031984B2 (ja) 2004-12-01 2004-12-15 レーザー熱処理のための加熱チャック

Country Status (4)

Country Link
US (1) US7731798B2 (https=)
JP (1) JP5031984B2 (https=)
KR (1) KR20060061198A (https=)
TW (1) TWI257158B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10029332B2 (en) 2014-09-04 2018-07-24 Samsung Electronics Co., Ltd. Spot heater and device for cleaning wafer using the same

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326877B2 (en) * 2004-12-01 2008-02-05 Ultratech, Inc. Laser thermal processing chuck with a thermal compensating heater module
KR100626395B1 (ko) * 2005-06-29 2006-09-20 삼성전자주식회사 노광 후 베이크 장치 및 노광 후 베이크 방법, 그리고 상기장치를 가지는 포토 리소그래피 시스템
DE102009026300A1 (de) * 2009-07-31 2011-02-10 Solibro Gmbh Herstellungsverfahren und Herstellungsvorrichtung zur Herstellung von Dünnfilmsolarzellen
CN101794719B (zh) * 2010-03-23 2011-06-15 中国电子科技集团公司第二研究所 晶圆片的自动升降吸附机构
US20120074126A1 (en) * 2010-03-26 2012-03-29 Applied Materials, Inc. Wafer profile modification through hot/cold temperature zones on pedestal for semiconductor manufacturing equipment
CN102035985B (zh) * 2010-11-15 2014-06-04 北京航空航天大学 一种快速高精度扫描成像装置
US9343307B2 (en) * 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers
WO2016148855A1 (en) * 2015-03-19 2016-09-22 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures
ITUA20162821A1 (it) * 2016-04-22 2017-10-22 Advanced Techne S R L Dissipatore per elettronica di potenza, relativo procedimento di produzione, e macchina per attuare tale procedimento.
CN107052586B (zh) * 2017-04-14 2019-07-12 东莞市启天自动化设备股份有限公司 一种硅片激光打标机
JP6976658B2 (ja) * 2017-12-15 2021-12-08 住友重機械工業株式会社 チャックプレート及びアニール装置
WO2019116826A1 (ja) * 2017-12-15 2019-06-20 住友重機械工業株式会社 チャックプレート、アニール装置、及びアニール方法
KR102088902B1 (ko) * 2018-02-14 2020-03-13 주식회사 이오테크닉스 리플로우 솔더링 장치 및 리플로우 솔더링 방법
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
KR102188261B1 (ko) * 2019-08-02 2020-12-09 세미기어, 인코포레이션 기판 냉각 장치 및 방법
US11610792B2 (en) * 2019-08-16 2023-03-21 Applied Materials, Inc. Heated substrate support with thermal baffles
US11493551B2 (en) 2020-06-22 2022-11-08 Advantest Test Solutions, Inc. Integrated test cell using active thermal interposer (ATI) with parallel socket actuation
EP3970899B1 (en) 2020-09-18 2023-11-22 Laser Systems & Solutions of Europe Method of and system for uniformly irradiating a frame of a processed substrate having a plurality of frames
US11549981B2 (en) 2020-10-01 2023-01-10 Advantest Test Solutions, Inc. Thermal solution for massively parallel testing
US11808812B2 (en) 2020-11-02 2023-11-07 Advantest Test Solutions, Inc. Passive carrier-based device delivery for slot-based high-volume semiconductor test system
US11821913B2 (en) 2020-11-02 2023-11-21 Advantest Test Solutions, Inc. Shielded socket and carrier for high-volume test of semiconductor devices
US12320841B2 (en) 2020-11-19 2025-06-03 Advantest Test Solutions, Inc. Wafer scale active thermal interposer for device testing
US11567119B2 (en) 2020-12-04 2023-01-31 Advantest Test Solutions, Inc. Testing system including active thermal interposer device
US11573262B2 (en) 2020-12-31 2023-02-07 Advantest Test Solutions, Inc. Multi-input multi-zone thermal control for device testing
US11587640B2 (en) 2021-03-08 2023-02-21 Advantest Test Solutions, Inc. Carrier based high volume system level testing of devices with pop structures
US12583043B2 (en) * 2021-08-31 2026-03-24 Yield Engineering Systems, Inc. Process chamber with UV irradiance
US11656273B1 (en) 2021-11-05 2023-05-23 Advantest Test Solutions, Inc. High current device testing apparatus and systems
CN114496866B (zh) * 2022-01-20 2023-03-28 无锡昌鼎电子有限公司 芯片恒温载盘机构
JP7699561B2 (ja) * 2022-03-22 2025-06-27 三菱電機株式会社 半導体装置の製造方法および半導体製造装置
CN116153840B (zh) * 2023-02-24 2023-11-03 长春光华微电子设备工程中心有限公司 一种卡盘
KR102790101B1 (ko) * 2023-06-28 2025-04-04 (주)알엔알랩 웨이퍼 구조체에 대한 레이저 열처리 방법 및 이를 적용한 반도체 소자의 제조 방법
CN119772291B (zh) * 2025-03-07 2025-06-03 深圳市紫宸激光设备有限公司 基于视觉定位和检测的晶圆微凸点制备设备及方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117712A (en) * 1976-01-23 1978-10-03 Armstrong Cork Company Emissimeter and method of measuring emissivity
KR900001232B1 (ko) * 1984-12-27 1990-03-05 가부시끼 가이샤 디스코 반도체 웨이퍼 방형절단기
DE3607532A1 (de) * 1986-03-07 1987-09-10 Semitec Semiconductor Equipmen Vorrichtung zur konstanthaltung der temperatur eines koerpers
JPS62216318A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd レ−ザアニ−ル装置
JPH01192149A (ja) * 1988-01-28 1989-08-02 Mitsubishi Electric Corp 電気発熱体の冷却装置
JPH01192151A (ja) * 1988-01-28 1989-08-02 Mitsubishi Electric Corp 電気発熱体の冷却装置
JPH0487321A (ja) * 1990-07-31 1992-03-19 Japan Synthetic Rubber Co Ltd 真空処理装置の被処理物保持装置
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
US5191506A (en) * 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
US5493987A (en) * 1994-05-16 1996-02-27 Ag Associates, Inc. Chemical vapor deposition reactor and method
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
JP4256503B2 (ja) * 1997-10-30 2009-04-22 東京エレクトロン株式会社 真空処理装置
DE69842191D1 (de) * 1997-11-05 2011-05-05 Tokyo Electron Ltd Halbleiterscheibenhaltevorrichtung
US6019164A (en) * 1997-12-31 2000-02-01 Temptronic Corporation Workpiece chuck
US6328096B1 (en) * 1997-12-31 2001-12-11 Temptronic Corporation Workpiece chuck
US6415858B1 (en) * 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US6583638B2 (en) 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
US6307184B1 (en) * 1999-07-12 2001-10-23 Fsi International, Inc. Thermal processing chamber for heating and cooling wafer-like objects
US6375749B1 (en) * 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US6855030B2 (en) * 1999-10-27 2005-02-15 Strasbaugh Modular method for chemical mechanical planarization
US6366308B1 (en) 2000-02-16 2002-04-02 Ultratech Stepper, Inc. Laser thermal processing apparatus and method
US6392745B1 (en) * 2000-06-13 2002-05-21 American Air Liquide, Inc. Method and apparatus for the fast detection of surface characteristics
AU2001282879A1 (en) * 2000-07-08 2002-01-21 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
JP2004505443A (ja) * 2000-07-10 2004-02-19 テンプトロニック　コーポレイション 交互配置された加熱および冷却要素と交換可能な上面アセンブリと硬膜層表面とをもつ熱プレートを有するウェーハチャック
US6606234B1 (en) * 2000-09-05 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
US6508062B2 (en) * 2001-01-31 2003-01-21 Applied Materials, Inc. Thermal exchanger for a wafer chuck
US6636062B2 (en) * 2001-04-10 2003-10-21 Delta Design, Inc. Temperature control device for an electronic component
JP4549022B2 (ja) * 2001-04-30 2010-09-22 ラム リサーチ コーポレイション ワーク支持体の表面を横切る空間温度分布を制御する方法および装置
KR20020096524A (ko) * 2001-06-20 2002-12-31 삼성전자 주식회사 반도체 장치 제조용 공정챔버의 웨이퍼 안착 구조
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
JP4119104B2 (ja) * 2001-07-12 2008-07-16 株式会社アドバンテスト ヒータ付プッシャ、電子部品ハンドリング装置および電子部品の温度制御方法
US6753129B2 (en) * 2001-12-07 2004-06-22 Applied Materials Inc. Method and apparatus for modification of chemically amplified photoresist by electron beam exposure
KR20040097317A (ko) * 2002-04-09 2004-11-17 이 아이 듀폰 디 네모아 앤드 캄파니 광 도파관 구조물의 균일 가열 방법 및 장치
US20040144760A1 (en) * 2002-05-17 2004-07-29 Cahill Steven P. Method and system for marking a workpiece such as a semiconductor wafer and laser marker for use therein
US7164466B2 (en) * 2002-08-27 2007-01-16 Nikon Corporation Detachable heat sink
US6747245B2 (en) 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing
JP2006108273A (ja) * 2004-10-04 2006-04-20 Disco Abrasive Syst Ltd ウエーハの分割方法および分割装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10029332B2 (en) 2014-09-04 2018-07-24 Samsung Electronics Co., Ltd. Spot heater and device for cleaning wafer using the same
US10576582B2 (en) 2014-09-04 2020-03-03 Samsung Electronics Co., Ltd. Spot heater and device for cleaning wafer using the same

Also Published As

Publication number Publication date
US7731798B2 (en) 2010-06-08
TWI257158B (en) 2006-06-21
US20060113290A1 (en) 2006-06-01
TW200620596A (en) 2006-06-16
JP2006156915A (ja) 2006-06-15
KR20060061198A (ko) 2006-06-07

Similar Documents

Publication Publication Date Title
JP5031984B2 (ja) レーザー熱処理のための加熱チャック
JP5630935B2 (ja) 工作物の熱誘起運動を抑制する機器及び装置
JP5518043B2 (ja) 熱処理チャンバーでのウェハー支持部の温度測定および制御
KR101070667B1 (ko) 기판 처리 장치, 가열 장치 및 반도체 장치의 제조 방법
TWI478274B (zh) 調整靜電夾盤支撐組件之導熱性的方法
US9403251B2 (en) Minimal contact edge ring for rapid thermal processing
TWI861287B (zh) 載置台及檢查裝置
CN101207010A (zh) 使用二次工艺平面快速传导冷却
CN110352482B (zh) 基板载置台及其电浆处理装置以及电浆处理方法
CN101999160A (zh) 退火装置
TW201125040A (en) Apparatus and method for enhancing the cool down of radiatively heated substrates
CN1973356A (zh) 与晶片发射率无关的有效晶片温度控制的利用
JPH11168056A (ja) ウェハ保持装置
JP4651372B2 (ja) 熱補償ヒーターモジュールを有するレーザー熱処理用チャック
JPH1187463A (ja) 基板処理装置
KR20230152987A (ko) 연마패드의 온도조절장치, 이를 포함하는 기판 연마 시스템 및 연마패드의 온도 조절 방법
JP5926142B2 (ja) 工作物の熱誘起運動を抑制する機器及び装置
KR100856432B1 (ko) 웨이퍼 온도 제어 방법, 장치, 시스템 및 제품
US20230420274A1 (en) Radiatively-Cooled Substrate Holder
KR102271250B1 (ko) 램프 가열 어셈블리를 위한 확산기
KR20260058765A (ko) 만곡된 기판 대면 표면을 갖는 열 처리 장치
CN100550336C (zh) 用于抑制工件的热诱导运动的装置及方法
WO2020190991A1 (en) Die bonding system with heated automatic collet changer
KR20050011446A (ko) 플립칩 본더장치

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060912

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101110

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110117

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110120

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110309

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120118

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120411

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120416

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120518

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20120518

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120606

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120628

R150 Certificate of patent or registration of utility model

Ref document number: 5031984

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150706

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150706

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees