JP5031393B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP5031393B2 JP5031393B2 JP2007033638A JP2007033638A JP5031393B2 JP 5031393 B2 JP5031393 B2 JP 5031393B2 JP 2007033638 A JP2007033638 A JP 2007033638A JP 2007033638 A JP2007033638 A JP 2007033638A JP 5031393 B2 JP5031393 B2 JP 5031393B2
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Description
20 メモリコア
21、22、23、24 メモリバンク
30 出力バッファ
40 BIST回路
41 クロック/アクティブ信号発生回路
42 BISTパターンシーケンサ
Claims (3)
- 512ビット以上の所定ビットずつデータを入力するデータ入力手段と、
前記データ入力手段に入力されたデータを記憶する1つ以上のメモリバンクと、
前記メモリバンクから読み出されたデータを前記所定ビットずつ出力するデータ出力手段と、
自己診断テスト時に、テストデータ、テストデータ期待値、アドレス信号を発生して前記1つ以上のメモリバンクに供給する自己診断テスト手段と、を備え、
前記自己診断テスト手段は、データの記憶対象となるメモリバンクの数が異なる動作モードに応じた周波数の自己診断テスト用クロックを発生する自己診断テストクロック発生手段と、前記自己診断テスト用クロックに基づいてテストデータ、テストデータ期待値、アドレス信号を発生する制御器と、を備え、前記動作モードに応じて、アドレス空間の異なるアドレス信号を発生する
半導体記憶装置。 - 前記自己診断テスト手段は、データの記憶対象となるメモリバンクの数が多くなる動作モードに移行するとアドレス空間を狭くしたアドレス信号を発生し、データの記憶対象となるメモリバンクの数が少なくなる動作モードに移行するとアドレス空間を広くしたアドレス信号を発生する
請求項1に記載の半導体記憶装置。 - データの記憶対象となるメモリバンクの数が複数の場合、各メモリバンクにデータが書き込まれる順番、及び各メモリバンクからデータが読み出される順番が固定されている
請求項1に記載の半導体記憶装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007033638A JP5031393B2 (ja) | 2007-02-14 | 2007-02-14 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007033638A JP5031393B2 (ja) | 2007-02-14 | 2007-02-14 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008198297A JP2008198297A (ja) | 2008-08-28 |
JP5031393B2 true JP5031393B2 (ja) | 2012-09-19 |
Family
ID=39757087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007033638A Expired - Fee Related JP5031393B2 (ja) | 2007-02-14 | 2007-02-14 | 半導体記憶装置 |
Country Status (1)
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JP (1) | JP5031393B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5091044B2 (ja) | 2008-07-31 | 2012-12-05 | 株式会社デンソー | マイクロストリップアレーアンテナ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53120234A (en) * | 1977-03-30 | 1978-10-20 | Toshiba Corp | Semiconductor memory |
JPS60261148A (ja) * | 1984-06-07 | 1985-12-24 | Mitsubishi Electric Corp | 半導体装置 |
JPS6150296A (ja) * | 1984-08-20 | 1986-03-12 | Toshiba Corp | 半導体記憶装置 |
JPS6410496A (en) * | 1987-07-02 | 1989-01-13 | Nec Corp | Semiconductor storage device |
JPH01140489A (ja) * | 1987-11-27 | 1989-06-01 | Nec Corp | 半導体記憶装置 |
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2007
- 2007-02-14 JP JP2007033638A patent/JP5031393B2/ja not_active Expired - Fee Related
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JP2008198297A (ja) | 2008-08-28 |
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