JP5025250B2 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JP5025250B2
JP5025250B2 JP2006339204A JP2006339204A JP5025250B2 JP 5025250 B2 JP5025250 B2 JP 5025250B2 JP 2006339204 A JP2006339204 A JP 2006339204A JP 2006339204 A JP2006339204 A JP 2006339204A JP 5025250 B2 JP5025250 B2 JP 5025250B2
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JP
Japan
Prior art keywords
substrate
shutter
shot
exposure amount
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006339204A
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English (en)
Japanese (ja)
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JP2008153402A (ja
JP2008153402A5 (enExample
Inventor
真一 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006339204A priority Critical patent/JP5025250B2/ja
Priority to TW096145155A priority patent/TWI388938B/zh
Priority to US11/956,597 priority patent/US8223317B2/en
Priority to KR1020070130571A priority patent/KR100972879B1/ko
Publication of JP2008153402A publication Critical patent/JP2008153402A/ja
Publication of JP2008153402A5 publication Critical patent/JP2008153402A5/ja
Application granted granted Critical
Publication of JP5025250B2 publication Critical patent/JP5025250B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006339204A 2006-12-15 2006-12-15 露光装置及びデバイス製造方法 Expired - Fee Related JP5025250B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006339204A JP5025250B2 (ja) 2006-12-15 2006-12-15 露光装置及びデバイス製造方法
TW096145155A TWI388938B (zh) 2006-12-15 2007-11-28 曝光設備及裝置製造方法
US11/956,597 US8223317B2 (en) 2006-12-15 2007-12-14 Exposure apparatus and device manufacturing method controlling shutter based on intensity of reflected light
KR1020070130571A KR100972879B1 (ko) 2006-12-15 2007-12-14 노광장치 및 디바이스 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006339204A JP5025250B2 (ja) 2006-12-15 2006-12-15 露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2008153402A JP2008153402A (ja) 2008-07-03
JP2008153402A5 JP2008153402A5 (enExample) 2010-02-12
JP5025250B2 true JP5025250B2 (ja) 2012-09-12

Family

ID=39526727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006339204A Expired - Fee Related JP5025250B2 (ja) 2006-12-15 2006-12-15 露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US8223317B2 (enExample)
JP (1) JP5025250B2 (enExample)
KR (1) KR100972879B1 (enExample)
TW (1) TWI388938B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100088B2 (ja) * 2006-11-07 2012-12-19 キヤノン株式会社 露光装置及びデバイス製造方法
JP5173650B2 (ja) 2008-07-29 2013-04-03 キヤノン株式会社 露光装置およびデバイス製造方法
KR101652887B1 (ko) 2009-12-04 2016-09-02 삼성디스플레이 주식회사 기판의 노광방법, 이를 수행하기 위한 기판의 노광장치 및 이를 이용한 표시기판의 제조방법
JP5221611B2 (ja) 2010-09-13 2013-06-26 株式会社東芝 ドーズデータ生成装置、露光システム、ドーズデータ生成方法および半導体装置の製造方法
CN103765316B (zh) 2011-08-18 2016-06-29 Asml荷兰有限公司 光刻设备和器件制造方法
KR101633761B1 (ko) 2012-01-17 2016-06-27 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
JP6929142B2 (ja) * 2017-06-19 2021-09-01 キヤノン株式会社 露光装置、および物品の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771132A (en) 1980-10-21 1982-05-01 Canon Inc Exposure controlling system
JPH0782981B2 (ja) * 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JPH0513292A (ja) * 1991-07-02 1993-01-22 Nikon Corp 露光装置
JPH0864510A (ja) * 1994-08-19 1996-03-08 Oki Electric Ind Co Ltd 露光量制御方法及びその装置
JPH08236429A (ja) * 1995-02-23 1996-09-13 Nikon Corp 投影露光装置
JPH08250398A (ja) * 1995-03-14 1996-09-27 Nikon Corp 投影露光装置
JPH0945604A (ja) 1995-07-28 1997-02-14 Nec Corp 露光方法及び露光装置
JPH09213619A (ja) * 1996-01-31 1997-08-15 Nikon Corp 露光方法及び露光装置
JPH10294262A (ja) * 1997-04-18 1998-11-04 Nikon Corp 投影露光装置
KR20000050395A (ko) * 1999-01-08 2000-08-05 윤종용 반사광 검출기를 포함하는 노광장치 및 이를 이용한 노광방법
JP2001144004A (ja) * 1999-11-16 2001-05-25 Nikon Corp 露光方法、露光装置、及びデバイス製造方法
JP2001203137A (ja) * 2000-01-19 2001-07-27 Mitsubishi Electric Corp レジストパターン形成方法およびそれを使用して製造される半導体装置
JP3807933B2 (ja) * 2000-12-14 2006-08-09 株式会社ルネサステクノロジ 投影露光装置及び投影露光方法
JP4622568B2 (ja) * 2005-02-14 2011-02-02 株式会社ニコン 露光方法、露光装置、反射板、反射率計測センサの校正方法及びマイクロデバイスの製造方法

Also Published As

Publication number Publication date
US20080143990A1 (en) 2008-06-19
US8223317B2 (en) 2012-07-17
KR100972879B1 (ko) 2010-07-28
KR20080055716A (ko) 2008-06-19
JP2008153402A (ja) 2008-07-03
TWI388938B (zh) 2013-03-11
TW200832081A (en) 2008-08-01

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