KR100972879B1 - 노광장치 및 디바이스 제조방법 - Google Patents

노광장치 및 디바이스 제조방법 Download PDF

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Publication number
KR100972879B1
KR100972879B1 KR1020070130571A KR20070130571A KR100972879B1 KR 100972879 B1 KR100972879 B1 KR 100972879B1 KR 1020070130571 A KR1020070130571 A KR 1020070130571A KR 20070130571 A KR20070130571 A KR 20070130571A KR 100972879 B1 KR100972879 B1 KR 100972879B1
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South Korea
Prior art keywords
substrate
shutter
exposure
exposure amount
information
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Expired - Fee Related
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KR1020070130571A
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English (en)
Korean (ko)
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KR20080055716A (ko
Inventor
신이치 히라노
Original Assignee
캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020070130571A 2006-12-15 2007-12-14 노광장치 및 디바이스 제조방법 Expired - Fee Related KR100972879B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00339204 2006-12-15
JP2006339204A JP5025250B2 (ja) 2006-12-15 2006-12-15 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20080055716A KR20080055716A (ko) 2008-06-19
KR100972879B1 true KR100972879B1 (ko) 2010-07-28

Family

ID=39526727

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070130571A Expired - Fee Related KR100972879B1 (ko) 2006-12-15 2007-12-14 노광장치 및 디바이스 제조방법

Country Status (4)

Country Link
US (1) US8223317B2 (enExample)
JP (1) JP5025250B2 (enExample)
KR (1) KR100972879B1 (enExample)
TW (1) TWI388938B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100088B2 (ja) * 2006-11-07 2012-12-19 キヤノン株式会社 露光装置及びデバイス製造方法
JP5173650B2 (ja) 2008-07-29 2013-04-03 キヤノン株式会社 露光装置およびデバイス製造方法
KR101652887B1 (ko) 2009-12-04 2016-09-02 삼성디스플레이 주식회사 기판의 노광방법, 이를 수행하기 위한 기판의 노광장치 및 이를 이용한 표시기판의 제조방법
JP5221611B2 (ja) 2010-09-13 2013-06-26 株式会社東芝 ドーズデータ生成装置、露光システム、ドーズデータ生成方法および半導体装置の製造方法
NL2009213A (en) 2011-08-18 2013-02-19 Asml Netherlands Bv Lithograpic apparatus and device manufacturing method.
NL2010020A (en) 2012-01-17 2013-07-18 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP6929142B2 (ja) * 2017-06-19 2021-09-01 キヤノン株式会社 露光装置、および物品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513292A (ja) * 1991-07-02 1993-01-22 Nikon Corp 露光装置
KR0178629B1 (ko) * 1995-07-28 1999-05-01 다쯔로 데즈까 노광방법 및 노광장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771132A (en) 1980-10-21 1982-05-01 Canon Inc Exposure controlling system
JPH0782981B2 (ja) * 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JPH0864510A (ja) * 1994-08-19 1996-03-08 Oki Electric Ind Co Ltd 露光量制御方法及びその装置
JPH08236429A (ja) * 1995-02-23 1996-09-13 Nikon Corp 投影露光装置
JPH08250398A (ja) * 1995-03-14 1996-09-27 Nikon Corp 投影露光装置
JPH09213619A (ja) * 1996-01-31 1997-08-15 Nikon Corp 露光方法及び露光装置
JPH10294262A (ja) * 1997-04-18 1998-11-04 Nikon Corp 投影露光装置
KR20000050395A (ko) * 1999-01-08 2000-08-05 윤종용 반사광 검출기를 포함하는 노광장치 및 이를 이용한 노광방법
JP2001144004A (ja) * 1999-11-16 2001-05-25 Nikon Corp 露光方法、露光装置、及びデバイス製造方法
JP2001203137A (ja) * 2000-01-19 2001-07-27 Mitsubishi Electric Corp レジストパターン形成方法およびそれを使用して製造される半導体装置
JP3807933B2 (ja) * 2000-12-14 2006-08-09 株式会社ルネサステクノロジ 投影露光装置及び投影露光方法
JP4622568B2 (ja) * 2005-02-14 2011-02-02 株式会社ニコン 露光方法、露光装置、反射板、反射率計測センサの校正方法及びマイクロデバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513292A (ja) * 1991-07-02 1993-01-22 Nikon Corp 露光装置
KR0178629B1 (ko) * 1995-07-28 1999-05-01 다쯔로 데즈까 노광방법 및 노광장치

Also Published As

Publication number Publication date
KR20080055716A (ko) 2008-06-19
JP5025250B2 (ja) 2012-09-12
TW200832081A (en) 2008-08-01
JP2008153402A (ja) 2008-07-03
US20080143990A1 (en) 2008-06-19
US8223317B2 (en) 2012-07-17
TWI388938B (zh) 2013-03-11

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