JP5020276B2 - 薄膜トランジスタ及びそれを備える平板表示装置 - Google Patents
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- 239000000758 substrate Substances 0.000 claims description 45
- 239000010408 film Substances 0.000 claims description 28
- 239000011521 glass Substances 0.000 claims description 14
- 239000004033 plastic Substances 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 81
- 238000000034 method Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
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- 239000011368 organic material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- -1 BaTiO 3 Chemical class 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
<12CaO・7Al2O3薄膜の特性評価>
同じ二つのガラス基板上に12CaO・7Al2O3のスパッタターゲットを利用して、常温で25%の酸素分圧(Ar:40sccm、O2:13sccm)及び工程圧力6.0×10−3torrで700WのパワーRF方式でスパッタリングした。結果物を350℃で熱処理することによって、それぞれ厚さ29nm(薄膜1)及び厚さ50nm(薄膜2)の薄膜を得た。
E=hc/λ(h=4.14×10−15eV,c=3×108m/s)
に代入して、前記非晶質膜のエネルギーバンド値として3.45eVを得た。
以下に、薄膜トランジスタの製造に関する実施例1を説明する。シリコン酸化物(SiOx)が形成されたガラス基板を準備した後、その上にMoWからなるゲート電極を200nmの厚さに形成した。次いで、前記ゲート電極の上部にシリコン窒化物(SiNx)を200nmの厚さに蒸着させて絶縁層を形成した。前記絶縁層の上部に12CaO・7Al2O3のスパッタターゲットを使用して、常温で25%の酸素分圧(Ar:40sccm,O2:13sccm)及び工程圧力6.0×10−3torrで700Wのパワーでスパッタリングした。結果のフィルム上にIZOを利用してソース及びドレイン電極を150nmの厚さに形成し、それを350℃で熱処理することによって、20nmのチャンネル層を備えた薄膜トランジスタを製作した。
MgO基板の上部に多結晶の12CaO・7Al2O3薄膜をPLD方式で蒸着した後、1000℃温度で熱処理した。結果の薄膜を600℃温度でH2 +で処理して1000nmのチャンネル層を形成し、その上にPtからなるゲート及びソース電極を40nmに形成した。ゲート及びソース電極の上部にY2O3を350nmの厚さに蒸着させて、絶縁層を形成した。前記絶縁層の上部にAuを300μmの厚さに蒸着してゲート電極を形成して、薄膜トランジスタを製作した。
11´ バッファ層
12,22 ゲート電極
13,23 絶縁層
14a,14b,24a,24b ソース及びドレイン電極
15,25 チャンネル層
Claims (12)
- 基板上に形成されたゲート電極と、
前記ゲート電極と絶縁されたソース及びドレイン電極と、
前記ゲート電極と絶縁され、前記ソース及びドレイン電極と電気的に連結されたチャンネル層と、
前記チャンネル層と前記ゲート電極との間に介在された絶縁層とを備え、
前記チャンネル層は、非晶質の12CaO・7Al2O3(C12A7)を含むことを特徴とする薄膜トランジスタ。 - 前記チャンネル層の厚さは、5乃至200nmであることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記チャンネル層は、前記絶縁層上に蒸着された12CaO・7Al2O3フィルムを100乃至600℃で熱処理して形成されたことを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記基板は、SUS基板、ガラス基板またはプラスチック基板を備えることを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記チャンネル層のエネルギーバンド値は、3乃至3.5eVであることを特徴とする請求項1に記載の薄膜トランジスタ。
- 基板上に形成されたソース及びドレイン電極と、
前記ソース及びドレイン電極と絶縁されたゲート電極と、
前記ソース及びドレイン電極と電気的に連結され、前記ゲート電極と絶縁されたチャンネル層と、
前記チャンネル層と前記ゲート電極との間に介在された絶縁層とを備え、
前記チャンネル層は、非晶質の12CaO・7Al2O3を含むことを特徴とする薄膜トランジスタ。 - 前記チャンネル層の厚さは、5乃至200nmであることを特徴とする請求項6に記載の薄膜トランジスタ。
- 前記チャンネル層は、前記絶縁層上に蒸着された12CaO・7Al2O3フィルムを100乃至600℃で熱処理して形成されたことを特徴とする請求項6に記載の薄膜トランジスタ。
- 前記基板は、SUS基板、ガラス基板またはプラスチック基板を備えることを特徴とする請求項6に記載の薄膜トランジスタ。
- 前記チャンネル層のエネルギーバンド値は、3乃至3.5eVであることを特徴とする請求項6に記載の薄膜トランジスタ。
- 請求項1乃至10のうちいずれか一項に記載の薄膜トランジスタ及び表示装置を備えることを特徴とする平板表示装置。
- 前記表示装置は、有機発光装置または液晶表示装置であることを特徴とする請求項11に記載の平板表示装置。
Applications Claiming Priority (2)
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KR1020080019692A KR100918404B1 (ko) | 2008-03-03 | 2008-03-03 | 박막 트랜지스터 및 이를 이용한 평판 표시 장치 |
KR10-2008-0019692 | 2008-03-03 |
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JP2009212520A JP2009212520A (ja) | 2009-09-17 |
JP5020276B2 true JP5020276B2 (ja) | 2012-09-05 |
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Country Status (6)
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US (1) | US8067770B2 (ja) |
EP (1) | EP2099074B1 (ja) |
JP (1) | JP5020276B2 (ja) |
KR (1) | KR100918404B1 (ja) |
CN (1) | CN101527321B (ja) |
DE (1) | DE602009000232D1 (ja) |
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JP5106313B2 (ja) * | 2008-08-13 | 2012-12-26 | 独立行政法人科学技術振興機構 | C12a7エレクトライドからなる導電性素子材料表面に対するオーミック接合形成方法 |
JP5760298B2 (ja) * | 2009-05-21 | 2015-08-05 | ソニー株式会社 | 薄膜トランジスタ、表示装置、および電子機器 |
CN102473732B (zh) * | 2009-07-27 | 2015-09-16 | 株式会社神户制钢所 | 布线结构以及具备布线结构的显示装置 |
US8884282B2 (en) * | 2010-04-02 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5977523B2 (ja) * | 2011-01-12 | 2016-08-24 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
WO2013191210A1 (ja) * | 2012-06-20 | 2013-12-27 | 国立大学法人東京工業大学 | C12a7エレクトライドの薄膜の製造方法、およびc12a7エレクトライドの薄膜 |
JP6284157B2 (ja) * | 2012-06-20 | 2018-02-28 | 国立研究開発法人科学技術振興機構 | 有機エレクトロルミネッセンス素子 |
CN102955312B (zh) * | 2012-11-14 | 2015-05-20 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
KR102029072B1 (ko) * | 2012-12-28 | 2019-10-07 | 엘지디스플레이 주식회사 | 플렉시블 표시장치 및 그 제조방법 |
KR102048892B1 (ko) | 2013-05-15 | 2019-11-27 | 삼성디스플레이 주식회사 | 무기 산화물 박막 및 그 제조방법 |
JP6149725B2 (ja) * | 2013-05-28 | 2017-06-21 | 旭硝子株式会社 | 半導体装置および半導体装置の製造方法 |
DE102015103651B4 (de) * | 2015-03-12 | 2017-11-16 | Osram Oled Gmbh | Verfahren zur Herstellung von elektrisch leitenden Strukturen und organische Leuchtdiode |
KR102442616B1 (ko) | 2015-04-08 | 2022-09-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN108963109B (zh) * | 2018-06-29 | 2020-10-09 | 云谷(固安)科技有限公司 | 一种有机电致发光装置 |
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KR0154817B1 (ko) | 1995-08-25 | 1998-10-15 | 김광호 | 액정 표시 장치용 박막 트랜지스터 및 그 제조 방법 |
EP1500631B1 (en) * | 2002-04-19 | 2017-08-02 | Japan Science and Technology Agency | Hydrogen-containing electrically conductive inorganic compound |
US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
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JP4850457B2 (ja) * | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5376750B2 (ja) * | 2005-11-18 | 2013-12-25 | 出光興産株式会社 | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル |
JP2008227316A (ja) * | 2007-03-14 | 2008-09-25 | Seiko Epson Corp | 半導体装置、半導体装置の製造方法および電子機器 |
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EP2099074A1 (en) | 2009-09-09 |
DE602009000232D1 (de) | 2010-11-11 |
EP2099074B1 (en) | 2010-09-29 |
CN101527321A (zh) | 2009-09-09 |
US20090218570A1 (en) | 2009-09-03 |
US8067770B2 (en) | 2011-11-29 |
KR20090094626A (ko) | 2009-09-08 |
JP2009212520A (ja) | 2009-09-17 |
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