DE602009000232D1 - Dünnfilmtransistor, Herstellungsverfahren dafür und Flachbildschirmanzeige mit dem Dünnfilmtransistor - Google Patents

Dünnfilmtransistor, Herstellungsverfahren dafür und Flachbildschirmanzeige mit dem Dünnfilmtransistor

Info

Publication number
DE602009000232D1
DE602009000232D1 DE602009000232T DE602009000232T DE602009000232D1 DE 602009000232 D1 DE602009000232 D1 DE 602009000232D1 DE 602009000232 T DE602009000232 T DE 602009000232T DE 602009000232 T DE602009000232 T DE 602009000232T DE 602009000232 D1 DE602009000232 D1 DE 602009000232D1
Authority
DE
Germany
Prior art keywords
thin
film transistor
manufacturing
flat panel
panel display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602009000232T
Other languages
English (en)
Inventor
Jae-Heung Ha
Young-Woo Song
Jong-Hyuk Lee
Yong-Tak Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Publication of DE602009000232D1 publication Critical patent/DE602009000232D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
DE602009000232T 2008-03-03 2009-02-27 Dünnfilmtransistor, Herstellungsverfahren dafür und Flachbildschirmanzeige mit dem Dünnfilmtransistor Active DE602009000232D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080019692A KR100918404B1 (ko) 2008-03-03 2008-03-03 박막 트랜지스터 및 이를 이용한 평판 표시 장치

Publications (1)

Publication Number Publication Date
DE602009000232D1 true DE602009000232D1 (de) 2010-11-11

Family

ID=40671167

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602009000232T Active DE602009000232D1 (de) 2008-03-03 2009-02-27 Dünnfilmtransistor, Herstellungsverfahren dafür und Flachbildschirmanzeige mit dem Dünnfilmtransistor

Country Status (6)

Country Link
US (1) US8067770B2 (de)
EP (1) EP2099074B1 (de)
JP (1) JP5020276B2 (de)
KR (1) KR100918404B1 (de)
CN (1) CN101527321B (de)
DE (1) DE602009000232D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5106313B2 (ja) * 2008-08-13 2012-12-26 独立行政法人科学技術振興機構 Ｃ１２ａ７エレクトライドからなる導電性素子材料表面に対するオーミック接合形成方法
JP5760298B2 (ja) * 2009-05-21 2015-08-05 ソニー株式会社 薄膜トランジスタ、表示装置、および電子機器
CN102473732B (zh) * 2009-07-27 2015-09-16 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
US8884282B2 (en) * 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8921948B2 (en) * 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2013191212A1 (ja) * 2012-06-20 2013-12-27 国立大学法人東京工業大学 有機エレクトロルミネッセンス素子
WO2013191210A1 (ja) * 2012-06-20 2013-12-27 国立大学法人東京工業大学 Ｃ１２ａ７エレクトライドの薄膜の製造方法、およびｃ１２ａ７エレクトライドの薄膜
CN102955312B (zh) * 2012-11-14 2015-05-20 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
KR102029072B1 (ko) * 2012-12-28 2019-10-07 엘지디스플레이 주식회사 플렉시블 표시장치 및 그 제조방법
KR102048892B1 (ko) 2013-05-15 2019-11-27 삼성디스플레이 주식회사 무기 산화물 박막 및 그 제조방법
JP6149725B2 (ja) * 2013-05-28 2017-06-21 旭硝子株式会社 半導体装置および半導体装置の製造方法
DE102015103651B4 (de) * 2015-03-12 2017-11-16 Osram Oled Gmbh Verfahren zur Herstellung von elektrisch leitenden Strukturen und organische Leuchtdiode
KR102442616B1 (ko) 2015-04-08 2022-09-14 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN108963109B (zh) * 2018-06-29 2020-10-09 云谷（固安）科技有限公司 一种有机电致发光装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0154817B1 (ko) 1995-08-25 1998-10-15 김광호 액정 표시 장치용 박막 트랜지스터 및 그 제조 방법
EP1500631B1 (de) * 2002-04-19 2017-08-02 Japan Science and Technology Agency Wasserstoff enthaltende elektrisch leitende anorganische verbindung
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
KR100615235B1 (ko) * 2004-08-05 2006-08-25 삼성에스디아이 주식회사 유기 박막 트랜지스터군들 및 이를 구비한 평판 디스플레이 장치
JP4850457B2 (ja) * 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5376750B2 (ja) * 2005-11-18 2013-12-25 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル
JP2008227316A (ja) * 2007-03-14 2008-09-25 Seiko Epson Corp 半導体装置、半導体装置の製造方法および電子機器

Also Published As

Publication number Publication date
CN101527321B (zh) 2013-03-20
CN101527321A (zh) 2009-09-09
US8067770B2 (en) 2011-11-29
EP2099074B1 (de) 2010-09-29
EP2099074A1 (de) 2009-09-09
KR20090094626A (ko) 2009-09-08
JP5020276B2 (ja) 2012-09-05
US20090218570A1 (en) 2009-09-03
KR100918404B1 (ko) 2009-09-24
JP2009212520A (ja) 2009-09-17

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