JP5008308B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5008308B2
JP5008308B2 JP2006014122A JP2006014122A JP5008308B2 JP 5008308 B2 JP5008308 B2 JP 5008308B2 JP 2006014122 A JP2006014122 A JP 2006014122A JP 2006014122 A JP2006014122 A JP 2006014122A JP 5008308 B2 JP5008308 B2 JP 5008308B2
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Japan
Prior art keywords
light emitting
layer
emitting device
light
semiconductor layer
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JP2006014122A
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English (en)
Japanese (ja)
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JP2006210916A (ja
JP2006210916A5 (enExample
Inventor
明勳 謝
大正 徐
韋智 彭
亞儒 李
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Epistar Corp
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Epistar Corp
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Application filed by Epistar Corp filed Critical Epistar Corp
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Publication of JP2006210916A5 publication Critical patent/JP2006210916A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Facsimile Heads (AREA)
JP2006014122A 2005-01-25 2006-01-23 発光装置 Active JP5008308B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW094102193A TWI330413B (en) 2005-01-25 2005-01-25 A light-emitting device
TW094102193 2005-01-25

Publications (3)

Publication Number Publication Date
JP2006210916A JP2006210916A (ja) 2006-08-10
JP2006210916A5 JP2006210916A5 (enExample) 2009-03-05
JP5008308B2 true JP5008308B2 (ja) 2012-08-22

Family

ID=36686550

Family Applications (1)

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JP2006014122A Active JP5008308B2 (ja) 2005-01-25 2006-01-23 発光装置

Country Status (5)

Country Link
US (1) US7489068B2 (enExample)
JP (1) JP5008308B2 (enExample)
KR (1) KR101059992B1 (enExample)
DE (1) DE102006002683B4 (enExample)
TW (1) TWI330413B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022004293A1 (ja) 2020-07-03 2022-01-06 信越半導体株式会社 接合型半導体素子及び接合型半導体素子の製造方法
US12276733B2 (en) 2018-02-07 2025-04-15 Naoyuki Murakami Method of computing three-dimensional drive parameter of a three-dimensional numerical drive control device by driving measurement of a tracking laser distance meter
US12438101B2 (en) 2020-07-03 2025-10-07 Shin-Etsu Handotai Co., Ltd. Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device

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US8063557B2 (en) * 2003-07-04 2011-11-22 Epistar Corporation Light-emitting device having wavelength-converting materials therewithin
DE102005055293A1 (de) * 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US9318327B2 (en) * 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
US20080277682A1 (en) * 2007-03-29 2008-11-13 The Regents Of The University Of California Dual surface-roughened n-face high-brightness led
EP2017898A1 (en) * 2007-07-17 2009-01-21 Vishay Israel Ltd. Semiconductor light-emitting device and method for the manufacture thereof
KR101449000B1 (ko) * 2007-09-06 2014-10-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007060204B4 (de) * 2007-09-28 2019-02-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
TWI349221B (en) * 2008-02-05 2011-09-21 Au Optronics Corp Sensing structure of a display
US10147843B2 (en) * 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US20120056228A1 (en) * 2010-09-07 2012-03-08 Phostek, Inc. Led chip modules, method for packaging the led chip modules, and moving fixture thereof
JP2012199231A (ja) 2011-03-04 2012-10-18 Semiconductor Energy Lab Co Ltd 表示装置
KR101104645B1 (ko) * 2011-03-25 2012-01-16 (주)세미머티리얼즈 발광 소자 및 그의 제조 방법
CN103858243A (zh) * 2011-08-30 2014-06-11 皇家飞利浦有限公司 将衬底接合到半导体发光器件的方法
DE102012003638A1 (de) * 2012-02-24 2013-08-29 Limo Patentverwaltung Gmbh & Co. Kg Leuchtdiode
KR101662202B1 (ko) * 2013-10-01 2016-10-04 광주과학기술원 발광 다이오드
JP6387780B2 (ja) * 2013-10-28 2018-09-12 日亜化学工業株式会社 発光装置及びその製造方法
KR20160024170A (ko) 2014-08-25 2016-03-04 삼성전자주식회사 반도체 발광 소자
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11073248B2 (en) * 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11997768B2 (en) 2014-09-28 2024-05-28 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
KR101913855B1 (ko) * 2015-03-04 2018-11-23 제이디엠 주식회사 투명 인쇄회로기판과 이의 제조방법 및 이를 이용한 ｌｅｄ 모듈
JP6668608B2 (ja) * 2015-04-27 2020-03-18 日亜化学工業株式会社 発光装置の製造方法
JP2017147364A (ja) * 2016-02-18 2017-08-24 株式会社東芝 半導体モジュール
WO2018038927A1 (en) * 2016-08-26 2018-03-01 The Penn State Research Foundation High light-extraction efficiency (lee) light-emitting diode (led)
JP2018148094A (ja) * 2017-03-07 2018-09-20 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
JP2019212875A (ja) * 2018-06-08 2019-12-12 信越半導体株式会社 発光素子及び発光素子の製造方法
KR102325791B1 (ko) * 2019-12-05 2021-11-12 웨이브로드 주식회사 반도체 발광소자
JP7011195B2 (ja) * 2020-02-27 2022-01-26 日亜化学工業株式会社 発光装置
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (16)

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JP2836687B2 (ja) * 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
EP0977280A3 (en) 1998-07-28 2008-11-26 Interuniversitair Micro-Elektronica Centrum Vzw Devices for emitting radiation with a high efficiency and a method for fabricating such devices
JP3758390B2 (ja) * 1998-12-14 2006-03-22 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
WO2001041225A2 (en) 1999-12-03 2001-06-07 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP3893874B2 (ja) * 1999-12-21 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
US6693352B1 (en) 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6703780B2 (en) * 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
EP1225643A1 (en) 2001-01-23 2002-07-24 Interuniversitair Microelektronica Centrum Vzw High efficiency unilateral light emitting device and method for fabricating such device
TW544958B (en) 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
JP4121551B2 (ja) * 2002-10-23 2008-07-23 信越半導体株式会社 発光素子の製造方法及び発光素子
JP2004235505A (ja) * 2003-01-31 2004-08-19 Shin Etsu Handotai Co Ltd 発光素子及び半導体素子用オーミック電極構造
TW571449B (en) 2002-12-23 2004-01-11 Epistar Corp Light-emitting device having micro-reflective structure
TW579610B (en) * 2003-01-30 2004-03-11 Epistar Corp Nitride light-emitting device having adhered reflective layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12276733B2 (en) 2018-02-07 2025-04-15 Naoyuki Murakami Method of computing three-dimensional drive parameter of a three-dimensional numerical drive control device by driving measurement of a tracking laser distance meter
WO2022004293A1 (ja) 2020-07-03 2022-01-06 信越半導体株式会社 接合型半導体素子及び接合型半導体素子の製造方法
US12438101B2 (en) 2020-07-03 2025-10-07 Shin-Etsu Handotai Co., Ltd. Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device

Also Published As

Publication number Publication date
TW200627668A (en) 2006-08-01
JP2006210916A (ja) 2006-08-10
TWI330413B (en) 2010-09-11
KR20060086272A (ko) 2006-07-31
DE102006002683A1 (de) 2006-08-03
DE102006002683B4 (de) 2019-10-17
US20060163595A1 (en) 2006-07-27
KR101059992B1 (ko) 2011-08-29
US7489068B2 (en) 2009-02-10

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