JP2006210916A5 - - Google Patents

Download PDF

Info

Publication number
JP2006210916A5
JP2006210916A5 JP2006014122A JP2006014122A JP2006210916A5 JP 2006210916 A5 JP2006210916 A5 JP 2006210916A5 JP 2006014122 A JP2006014122 A JP 2006014122A JP 2006014122 A JP2006014122 A JP 2006014122A JP 2006210916 A5 JP2006210916 A5 JP 2006210916A5
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
layer
scattering surface
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006014122A
Other languages
English (en)
Japanese (ja)
Other versions
JP5008308B2 (ja
JP2006210916A (ja
Filing date
Publication date
Priority claimed from TW094102193A external-priority patent/TWI330413B/zh
Application filed filed Critical
Publication of JP2006210916A publication Critical patent/JP2006210916A/ja
Publication of JP2006210916A5 publication Critical patent/JP2006210916A5/ja
Application granted granted Critical
Publication of JP5008308B2 publication Critical patent/JP5008308B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006014122A 2005-01-25 2006-01-23 発光装置 Active JP5008308B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW094102193 2005-01-25
TW094102193A TWI330413B (en) 2005-01-25 2005-01-25 A light-emitting device

Publications (3)

Publication Number Publication Date
JP2006210916A JP2006210916A (ja) 2006-08-10
JP2006210916A5 true JP2006210916A5 (enExample) 2009-03-05
JP5008308B2 JP5008308B2 (ja) 2012-08-22

Family

ID=36686550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006014122A Active JP5008308B2 (ja) 2005-01-25 2006-01-23 発光装置

Country Status (5)

Country Link
US (1) US7489068B2 (enExample)
JP (1) JP5008308B2 (enExample)
KR (1) KR101059992B1 (enExample)
DE (1) DE102006002683B4 (enExample)
TW (1) TWI330413B (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8063557B2 (en) * 2003-07-04 2011-11-22 Epistar Corporation Light-emitting device having wavelength-converting materials therewithin
DE102005055293A1 (de) * 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US9318327B2 (en) * 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
TW200905928A (en) * 2007-03-29 2009-02-01 Univ California Dual surface-roughened N-face high-brightness LED
EP2017898A1 (en) * 2007-07-17 2009-01-21 Vishay Israel Ltd. Semiconductor light-emitting device and method for the manufacture thereof
KR101449000B1 (ko) * 2007-09-06 2014-10-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007060204B4 (de) * 2007-09-28 2019-02-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
TWI349221B (en) * 2008-02-05 2011-09-21 Au Optronics Corp Sensing structure of a display
US10147843B2 (en) * 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US20120056228A1 (en) * 2010-09-07 2012-03-08 Phostek, Inc. Led chip modules, method for packaging the led chip modules, and moving fixture thereof
JP2012199231A (ja) 2011-03-04 2012-10-18 Semiconductor Energy Lab Co Ltd 表示装置
KR101104645B1 (ko) * 2011-03-25 2012-01-16 (주)세미머티리얼즈 발광 소자 및 그의 제조 방법
CN103858243A (zh) * 2011-08-30 2014-06-11 皇家飞利浦有限公司 将衬底接合到半导体发光器件的方法
DE102012003638A1 (de) * 2012-02-24 2013-08-29 Limo Patentverwaltung Gmbh & Co. Kg Leuchtdiode
KR101662202B1 (ko) * 2013-10-01 2016-10-04 광주과학기술원 발광 다이오드
JP6387780B2 (ja) * 2013-10-28 2018-09-12 日亜化学工業株式会社 発光装置及びその製造方法
KR20160024170A (ko) 2014-08-25 2016-03-04 삼성전자주식회사 반도체 발광 소자
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11997768B2 (en) 2014-09-28 2024-05-28 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11073248B2 (en) 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
KR101913855B1 (ko) * 2015-03-04 2018-11-23 제이디엠 주식회사 투명 인쇄회로기판과 이의 제조방법 및 이를 이용한 ｌｅｄ 모듈
JP6668608B2 (ja) * 2015-04-27 2020-03-18 日亜化学工業株式会社 発光装置の製造方法
JP2017147364A (ja) * 2016-02-18 2017-08-24 株式会社東芝 半導体モジュール
WO2018038927A1 (en) * 2016-08-26 2018-03-01 The Penn State Research Foundation High light-extraction efficiency (lee) light-emitting diode (led)
JP2018148094A (ja) * 2017-03-07 2018-09-20 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP6719494B2 (ja) 2018-02-07 2020-07-08 直之 村上 追尾レーザー距離計測器の駆動計測で、３次元の数値駆動の制御機器の３次元の駆動数値を演算する方法。
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
JP2019212875A (ja) * 2018-06-08 2019-12-12 信越半導体株式会社 発光素子及び発光素子の製造方法
KR102325791B1 (ko) * 2019-12-05 2021-11-12 웨이브로드 주식회사 반도체 발광소자
JP7011195B2 (ja) * 2020-02-27 2022-01-26 日亜化学工業株式会社 発光装置
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
JP7413941B2 (ja) * 2020-07-03 2024-01-16 信越半導体株式会社 接合型半導体素子及び接合型半導体素子の製造方法
JP7354943B2 (ja) 2020-07-03 2023-10-03 信越半導体株式会社 接合型半導体受光素子及び接合型半導体受光素子の製造方法
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2836687B2 (ja) * 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
EP0977280A3 (en) 1998-07-28 2008-11-26 Interuniversitair Micro-Elektronica Centrum Vzw Devices for emitting radiation with a high efficiency and a method for fabricating such devices
JP3758390B2 (ja) * 1998-12-14 2006-03-22 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
AU4139101A (en) 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP3893874B2 (ja) * 1999-12-21 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
US6693352B1 (en) 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6703780B2 (en) * 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
EP1225643A1 (en) 2001-01-23 2002-07-24 Interuniversitair Microelektronica Centrum Vzw High efficiency unilateral light emitting device and method for fabricating such device
TW544958B (en) 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
JP4121551B2 (ja) * 2002-10-23 2008-07-23 信越半導体株式会社 発光素子の製造方法及び発光素子
JP2004235505A (ja) * 2003-01-31 2004-08-19 Shin Etsu Handotai Co Ltd 発光素子及び半導体素子用オーミック電極構造
TW571449B (en) 2002-12-23 2004-01-11 Epistar Corp Light-emitting device having micro-reflective structure
TW579610B (en) * 2003-01-30 2004-03-11 Epistar Corp Nitride light-emitting device having adhered reflective layer

Similar Documents

Publication Publication Date Title
JP2006210916A5 (enExample)
Lee et al. Micro light‐emitting diodes for display and flexible biomedical applications
KR101059992B1 (ko) 발광 소자
JP4159421B2 (ja) 接着層を有する発光ダイオード及びその製造方法
JP2008165213A5 (enExample)
EP2485280A3 (en) Semiconductor light emitting device
CN102792247B (zh) 透明导电元件、输入装置及显示装置
JP2008165212A5 (enExample)
JP2013106048A5 (enExample)
CN109686869A (zh) 一种oled显示面板及其制备方法
WO2010051229A3 (en) Light extraction film with high index backfill layer and passivation layer
JP2012508955A5 (enExample)
EP2192626A3 (en) Light emitting device and method of manufacturing the same
TWI480572B (zh) A transparent conductive element, an input device, and a display device
TW201033646A (en) Luminance enhancement structure with varying pitches
TW200913307A (en) Light-emitting diode apparatus and its manufacturing method
CN108022942A (zh) 一种阵列基板和有机发光显示面板
JP2010526333A5 (enExample)
EP2211393A3 (en) Light emitting device
JP2003036969A5 (enExample)
JP2018531517A5 (enExample)
TW201909455A (zh) 微型發光元件及其製造方法及其應用之顯示裝置與過渡載板裝置
JP2013511853A5 (enExample)
US8674594B2 (en) Flip-chip type light-emitting device with curved reflective layer
EP1819202A3 (en) Semiconductor device and manufacturing method thereof