TWI330413B - A light-emitting device - Google Patents
A light-emitting device Download PDFInfo
- Publication number
- TWI330413B TWI330413B TW094102193A TW94102193A TWI330413B TW I330413 B TWI330413 B TW I330413B TW 094102193 A TW094102193 A TW 094102193A TW 94102193 A TW94102193 A TW 94102193A TW I330413 B TWI330413 B TW I330413B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- emitting
- emitting element
- group
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 169
- 239000000463 material Substances 0.000 claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 39
- 238000006243 chemical reaction Methods 0.000 claims description 22
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 239000012790 adhesive layer Substances 0.000 claims description 8
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- QVHWOZCZUNPZPW-UHFFFAOYSA-N 1,2,3,3,4,4-hexafluorocyclobutene Chemical compound FC1=C(F)C(F)(F)C1(F)F QVHWOZCZUNPZPW-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229920001940 conductive polymer Polymers 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- DLCRXTYMOCAMIQ-UHFFFAOYSA-N [O].[Sn].[Bi] Chemical compound [O].[Sn].[Bi] DLCRXTYMOCAMIQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- -1 A12〇3 Substances 0.000 claims 4
- 239000000470 constituent Substances 0.000 claims 2
- 239000000835 fiber Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 241000282320 Panthera leo Species 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- SXWCENOEDTVGEI-UHFFFAOYSA-N [La].[Sn]=O Chemical compound [La].[Sn]=O SXWCENOEDTVGEI-UHFFFAOYSA-N 0.000 claims 1
- PZOKYFPJHNMDSW-UHFFFAOYSA-N [Sn].[Zn].[Sn] Chemical compound [Sn].[Zn].[Sn] PZOKYFPJHNMDSW-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 238000004020 luminiscence type Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229920000768 polyamine Polymers 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 230000002269 spontaneous effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 description 1
- GJSURZIOUXUGAL-UHFFFAOYSA-N Clonidine Chemical compound ClC1=CC=CC(Cl)=C1NC1=NCCN1 GJSURZIOUXUGAL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229960002896 clonidine Drugs 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SOQBSQLGTKQSGQ-UHFFFAOYSA-N oxo(oxostannanylidene)tin Chemical compound O=[Sn]=[Sn]=O SOQBSQLGTKQSGQ-UHFFFAOYSA-N 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Facsimile Heads (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094102193A TWI330413B (en) | 2005-01-25 | 2005-01-25 | A light-emitting device |
| US11/326,750 US7489068B2 (en) | 2005-01-25 | 2006-01-06 | Light emitting device |
| KR1020060005283A KR101059992B1 (ko) | 2005-01-25 | 2006-01-18 | 발광 소자 |
| DE102006002683.7A DE102006002683B4 (de) | 2005-01-25 | 2006-01-19 | Licht emittierendes Bauteil |
| JP2006014122A JP5008308B2 (ja) | 2005-01-25 | 2006-01-23 | 発光装置 |
| US11/893,220 US8063557B2 (en) | 2003-07-04 | 2007-08-14 | Light-emitting device having wavelength-converting materials therewithin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094102193A TWI330413B (en) | 2005-01-25 | 2005-01-25 | A light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200627668A TW200627668A (en) | 2006-08-01 |
| TWI330413B true TWI330413B (en) | 2010-09-11 |
Family
ID=36686550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094102193A TWI330413B (en) | 2003-07-04 | 2005-01-25 | A light-emitting device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7489068B2 (enExample) |
| JP (1) | JP5008308B2 (enExample) |
| KR (1) | KR101059992B1 (enExample) |
| DE (1) | DE102006002683B4 (enExample) |
| TW (1) | TWI330413B (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8063557B2 (en) * | 2003-07-04 | 2011-11-22 | Epistar Corporation | Light-emitting device having wavelength-converting materials therewithin |
| DE102005055293A1 (de) * | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
| DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
| DE102007004302A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| US9318327B2 (en) * | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
| DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
| US20080277682A1 (en) * | 2007-03-29 | 2008-11-13 | The Regents Of The University Of California | Dual surface-roughened n-face high-brightness led |
| EP2017898A1 (en) * | 2007-07-17 | 2009-01-21 | Vishay Israel Ltd. | Semiconductor light-emitting device and method for the manufacture thereof |
| KR101449000B1 (ko) * | 2007-09-06 | 2014-10-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| DE102007060204B4 (de) * | 2007-09-28 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
| TWI349221B (en) * | 2008-02-05 | 2011-09-21 | Au Optronics Corp | Sensing structure of a display |
| US10147843B2 (en) * | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
| US20120056228A1 (en) * | 2010-09-07 | 2012-03-08 | Phostek, Inc. | Led chip modules, method for packaging the led chip modules, and moving fixture thereof |
| JP2012199231A (ja) | 2011-03-04 | 2012-10-18 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| KR101104645B1 (ko) * | 2011-03-25 | 2012-01-16 | (주)세미머티리얼즈 | 발광 소자 및 그의 제조 방법 |
| CN103858243A (zh) * | 2011-08-30 | 2014-06-11 | 皇家飞利浦有限公司 | 将衬底接合到半导体发光器件的方法 |
| DE102012003638A1 (de) * | 2012-02-24 | 2013-08-29 | Limo Patentverwaltung Gmbh & Co. Kg | Leuchtdiode |
| KR101662202B1 (ko) * | 2013-10-01 | 2016-10-04 | 광주과학기술원 | 발광 다이오드 |
| JP6387780B2 (ja) * | 2013-10-28 | 2018-09-12 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| KR20160024170A (ko) | 2014-08-25 | 2016-03-04 | 삼성전자주식회사 | 반도체 발광 소자 |
| US11085591B2 (en) | 2014-09-28 | 2021-08-10 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
| US11525547B2 (en) | 2014-09-28 | 2022-12-13 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
| US11073248B2 (en) * | 2014-09-28 | 2021-07-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED bulb lamp |
| US11543083B2 (en) | 2014-09-28 | 2023-01-03 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
| US12007077B2 (en) | 2014-09-28 | 2024-06-11 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED filament and LED light bulb |
| US11997768B2 (en) | 2014-09-28 | 2024-05-28 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
| US11421827B2 (en) | 2015-06-19 | 2022-08-23 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
| US11686436B2 (en) | 2014-09-28 | 2023-06-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and light bulb using LED filament |
| KR101913855B1 (ko) * | 2015-03-04 | 2018-11-23 | 제이디엠 주식회사 | 투명 인쇄회로기판과 이의 제조방법 및 이를 이용한 ｌｅｄ 모듈 |
| JP6668608B2 (ja) * | 2015-04-27 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| JP2017147364A (ja) * | 2016-02-18 | 2017-08-24 | 株式会社東芝 | 半導体モジュール |
| WO2018038927A1 (en) * | 2016-08-26 | 2018-03-01 | The Penn State Research Foundation | High light-extraction efficiency (lee) light-emitting diode (led) |
| JP2018148094A (ja) * | 2017-03-07 | 2018-09-20 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP6719494B2 (ja) | 2018-02-07 | 2020-07-08 | 直之 村上 | 追尾レーザー距離計測器の駆動計測で、３次元の数値駆動の制御機器の３次元の駆動数値を演算する方法。 |
| US10982048B2 (en) | 2018-04-17 | 2021-04-20 | Jiaxing Super Lighting Electric Appliance Co., Ltd | Organosilicon-modified polyimide resin composition and use thereof |
| JP2019212875A (ja) * | 2018-06-08 | 2019-12-12 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
| KR102325791B1 (ko) * | 2019-12-05 | 2021-11-12 | 웨이브로드 주식회사 | 반도체 발광소자 |
| JP7011195B2 (ja) * | 2020-02-27 | 2022-01-26 | 日亜化学工業株式会社 | 発光装置 |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| JP7354943B2 (ja) | 2020-07-03 | 2023-10-03 | 信越半導体株式会社 | 接合型半導体受光素子及び接合型半導体受光素子の製造方法 |
| JP7413941B2 (ja) * | 2020-07-03 | 2024-01-16 | 信越半導体株式会社 | 接合型半導体素子及び接合型半導体素子の製造方法 |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2836687B2 (ja) * | 1993-04-03 | 1998-12-14 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| EP0977280A3 (en) | 1998-07-28 | 2008-11-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
| JP3758390B2 (ja) * | 1998-12-14 | 2006-03-22 | パイオニア株式会社 | 窒化物半導体発光素子及びその製造方法 |
| WO2001041225A2 (en) | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
| JP3893874B2 (ja) * | 1999-12-21 | 2007-03-14 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
| TW465123B (en) * | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
| US6693352B1 (en) | 2000-06-05 | 2004-02-17 | Emitronix Inc. | Contact structure for group III-V semiconductor devices and method of producing the same |
| TW472400B (en) * | 2000-06-23 | 2002-01-11 | United Epitaxy Co Ltd | Method for roughing semiconductor device surface to increase the external quantum efficiency |
| US20020017652A1 (en) | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| US6703780B2 (en) * | 2001-01-16 | 2004-03-09 | General Electric Company | Organic electroluminescent device with a ceramic output coupler and method of making the same |
| EP1225643A1 (en) | 2001-01-23 | 2002-07-24 | Interuniversitair Microelektronica Centrum Vzw | High efficiency unilateral light emitting device and method for fabricating such device |
| TW544958B (en) | 2002-07-15 | 2003-08-01 | Epistar Corp | Light emitting diode with an adhesive layer and its manufacturing method |
| JP4121551B2 (ja) * | 2002-10-23 | 2008-07-23 | 信越半導体株式会社 | 発光素子の製造方法及び発光素子 |
| JP2004235505A (ja) * | 2003-01-31 | 2004-08-19 | Shin Etsu Handotai Co Ltd | 発光素子及び半導体素子用オーミック電極構造 |
| TW571449B (en) | 2002-12-23 | 2004-01-11 | Epistar Corp | Light-emitting device having micro-reflective structure |
| TW579610B (en) * | 2003-01-30 | 2004-03-11 | Epistar Corp | Nitride light-emitting device having adhered reflective layer |
-
2005
- 2005-01-25 TW TW094102193A patent/TWI330413B/zh not_active IP Right Cessation
-
2006
- 2006-01-06 US US11/326,750 patent/US7489068B2/en active Active
- 2006-01-18 KR KR1020060005283A patent/KR101059992B1/ko active Active
- 2006-01-19 DE DE102006002683.7A patent/DE102006002683B4/de active Active
- 2006-01-23 JP JP2006014122A patent/JP5008308B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200627668A (en) | 2006-08-01 |
| JP2006210916A (ja) | 2006-08-10 |
| KR20060086272A (ko) | 2006-07-31 |
| DE102006002683A1 (de) | 2006-08-03 |
| DE102006002683B4 (de) | 2019-10-17 |
| US20060163595A1 (en) | 2006-07-27 |
| KR101059992B1 (ko) | 2011-08-29 |
| JP5008308B2 (ja) | 2012-08-22 |
| US7489068B2 (en) | 2009-02-10 |
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| Date | Code | Title | Description |
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| MK4A | Expiration of patent term of an invention patent |