JP5004431B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5004431B2
JP5004431B2 JP2005097472A JP2005097472A JP5004431B2 JP 5004431 B2 JP5004431 B2 JP 5004431B2 JP 2005097472 A JP2005097472 A JP 2005097472A JP 2005097472 A JP2005097472 A JP 2005097472A JP 5004431 B2 JP5004431 B2 JP 5004431B2
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JP
Japan
Prior art keywords
gate
oxide film
peripheral circuit
transistor
gate oxide
Prior art date
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Expired - Fee Related
Application number
JP2005097472A
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English (en)
Japanese (ja)
Other versions
JP2006278848A (ja
JP2006278848A5 (enrdf_load_stackoverflow
Inventor
雅昭 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2005097472A priority Critical patent/JP5004431B2/ja
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to PCT/JP2005/023699 priority patent/WO2006068265A1/en
Priority to CN2008102153966A priority patent/CN101373776B/zh
Priority to KR1020067016720A priority patent/KR100779479B1/ko
Priority to US10/588,479 priority patent/US7579645B2/en
Priority to TW094145942A priority patent/TWI284987B/zh
Publication of JP2006278848A publication Critical patent/JP2006278848A/ja
Publication of JP2006278848A5 publication Critical patent/JP2006278848A5/ja
Application granted granted Critical
Publication of JP5004431B2 publication Critical patent/JP5004431B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2005097472A 2004-12-24 2005-03-30 半導体装置 Expired - Fee Related JP5004431B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005097472A JP5004431B2 (ja) 2005-03-30 2005-03-30 半導体装置
CN2008102153966A CN101373776B (zh) 2004-12-24 2005-12-19 半导体装置
KR1020067016720A KR100779479B1 (ko) 2004-12-24 2005-12-19 반도체 장치
US10/588,479 US7579645B2 (en) 2004-12-24 2005-12-19 Semiconductor device having non-volatile memory cell
PCT/JP2005/023699 WO2006068265A1 (en) 2004-12-24 2005-12-19 Semiconductor device
TW094145942A TWI284987B (en) 2004-12-24 2005-12-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005097472A JP5004431B2 (ja) 2005-03-30 2005-03-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2006278848A JP2006278848A (ja) 2006-10-12
JP2006278848A5 JP2006278848A5 (enrdf_load_stackoverflow) 2008-04-17
JP5004431B2 true JP5004431B2 (ja) 2012-08-22

Family

ID=37213262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005097472A Expired - Fee Related JP5004431B2 (ja) 2004-12-24 2005-03-30 半導体装置

Country Status (1)

Country Link
JP (1) JP5004431B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100851552B1 (ko) 2007-03-28 2008-08-11 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP2009239161A (ja) * 2008-03-28 2009-10-15 Genusion Inc 不揮発性半導体記憶装置及びその使用方法
JP5417765B2 (ja) * 2008-08-19 2014-02-19 凸版印刷株式会社 不揮発性半導体メモリセル及び不揮発性半導体メモリ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4057081B2 (ja) * 1995-09-29 2008-03-05 ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー 不揮発性半導体記憶装置の製造方法
JP3000524B2 (ja) * 1998-01-30 2000-01-17 セイコーインスツルメンツ株式会社 半導体装置の製造方法
DE10201303A1 (de) * 2002-01-15 2003-07-31 Infineon Technologies Ag Nichtflüchtige Zweitransistor-Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren
TW535265B (en) * 2002-04-29 2003-06-01 Powerchip Semiconductor Corp Structure and manufacturing method of CMOS process compatible single poly-silicon erasable and programmable ROM
TW536818B (en) * 2002-05-03 2003-06-11 Ememory Technology Inc Single-poly EEPROM
JP3957561B2 (ja) * 2002-05-24 2007-08-15 株式会社リコー 半導体装置
JP2004165182A (ja) * 2002-11-08 2004-06-10 Ricoh Co Ltd 半導体装置

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Publication number Publication date
JP2006278848A (ja) 2006-10-12

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